Diodes Incorporated ZXM61N02FTA
- Part Number:
- ZXM61N02FTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2848511-ZXM61N02FTA
- Description:
- MOSFET N-CH 20V 1.7A SOT23-3
- Datasheet:
- ZXM61N02FTA
Diodes Incorporated ZXM61N02FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXM61N02FTA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance180mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW THRESHOLD
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1.7A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max625mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation806mW
- Turn On Delay Time2.4 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs180m Ω @ 930mA, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds160pF @ 15V
- Current - Continuous Drain (Id) @ 25°C1.7A Ta
- Gate Charge (Qg) (Max) @ Vgs3.4nC @ 4.5V
- Rise Time4.2ns
- Drive Voltage (Max Rds On,Min Rds On)2.7V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)4.2 ns
- Turn-Off Delay Time7.8 ns
- Continuous Drain Current (ID)1.7A
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- Dual Supply Voltage20V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs700 mV
- Height1.1mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXM61N02FTA Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 160pF @ 15V.This device has a continuous drain current (ID) of [1.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 7.8 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Its overall power consumption can be reduced by using drive voltage (2.7V 4.5V).
ZXM61N02FTA Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 7.8 ns
ZXM61N02FTA Applications
There are a lot of Diodes Incorporated
ZXM61N02FTA applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 160pF @ 15V.This device has a continuous drain current (ID) of [1.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 7.8 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Its overall power consumption can be reduced by using drive voltage (2.7V 4.5V).
ZXM61N02FTA Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 7.8 ns
ZXM61N02FTA Applications
There are a lot of Diodes Incorporated
ZXM61N02FTA applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
ZXM61N02FTA More Descriptions
ZXM61N02F 20 V 0.18 Ohm N-Channel Enhancement Mode Vertical DMOS FET - SOT-23
Trans MOSFET N-CH 20V 1.7A Automotive 3-Pin SOT-23 T/R
MOSFET N-Channel 20V 1.7A SOT23 | Diodes Inc ZXM61N02FTA
MOSFET, N SOT-23 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:1.7A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.7V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.4A; No. of Pins:3; Power, Pd:625W; Power, Ptot:625W; Quantity, Reel:3000; Resistance, Rds on Max:0.18ohm; SMD Marking:N02; Temperature, Current:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:20V; Voltage, Vgs th Min:0.7V; Width, Tape:8mm
Trans MOSFET N-CH 20V 1.7A Automotive 3-Pin SOT-23 T/R
MOSFET N-Channel 20V 1.7A SOT23 | Diodes Inc ZXM61N02FTA
MOSFET, N SOT-23 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:1.7A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.7V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.4A; No. of Pins:3; Power, Pd:625W; Power, Ptot:625W; Quantity, Reel:3000; Resistance, Rds on Max:0.18ohm; SMD Marking:N02; Temperature, Current:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:20V; Voltage, Vgs th Min:0.7V; Width, Tape:8mm
The three parts on the right have similar specifications to ZXM61N02FTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeQualification StatusDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxConfigurationView Compare
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ZXM61N02FTA17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3SMD/SMTEAR99180mOhmMatte Tin (Sn)LOW THRESHOLDFET General Purpose Powers20VMOSFET (Metal Oxide)DUALGULL WING2601.7A40311625mW TaSingleENHANCEMENT MODE806mW2.4 nsN-ChannelSWITCHING180m Ω @ 930mA, 4.5V700mV @ 250μA160pF @ 15V1.7A Ta3.4nC @ 4.5V4.2ns2.7V 4.5V±12V4.2 ns7.8 ns1.7A12V20V20V150°C700 mV1.1mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012-noObsolete1 (Unlimited)3-EAR99---Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIED-800mANOT SPECIFIED311625mW TaSingleENHANCEMENT MODE625mW2.9 nsP-ChannelSWITCHING600m Ω @ 610mA, 4.5V1.5V @ 250μA150pF @ 15V900mA Ta3.5nC @ 4.5V6.7ns2.7V 4.5V±12V6.7 ns11.2 ns900mA12V-20V------No SVHC-RoHS CompliantLead FreeNot Qualified20V0.9A0.6Ohm-
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10 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)8-EAR9925mOhmMatte Tin (Sn)---30VMOSFET (Metal Oxide)DUALGULL WING260-7.9A408111.56W Ta-ENHANCEMENT MODE2.5W7.6 nsP-ChannelSWITCHING25m Ω @ 5.6A, 10V1V @ 250μA1979pF @ 25V6.25A Ta36nC @ 5V16.3ns4.5V 10V±20V39.6 ns94.6 ns7.9A20V-30V---1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free-30V6.25A-SINGLE WITH BUILT-IN DIODE
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-Surface MountSurface MountSOT-23-6614.996898mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)6-EAR99-Matte Tin (Sn)---MOSFET (Metal Oxide)DUALGULL WING260-40611625mW Ta-ENHANCEMENT MODE625mW2.8 nsP-ChannelSWITCHING230m Ω @ 800mA, 4.5V1V @ 250μA330pF @ 25V1.5A Ta10.2nC @ 10V6.4ns4.5V 10V±20V6.4 ns13.9 ns1.5A12V-30V---1.3mm3.1mm1.8mm-NoROHS3 Compliant--30V--SINGLE WITH BUILT-IN DIODE
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