ZXM61N02FTA

Diodes Incorporated ZXM61N02FTA

Part Number:
ZXM61N02FTA
Manufacturer:
Diodes Incorporated
Ventron No:
2848511-ZXM61N02FTA
Description:
MOSFET N-CH 20V 1.7A SOT23-3
ECAD Model:
Datasheet:
ZXM61N02FTA

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Comments
Specifications
Diodes Incorporated ZXM61N02FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXM61N02FTA.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    180mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    LOW THRESHOLD
  • Subcategory
    FET General Purpose Powers
  • Voltage - Rated DC
    20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    1.7A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    625mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    806mW
  • Turn On Delay Time
    2.4 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    180m Ω @ 930mA, 4.5V
  • Vgs(th) (Max) @ Id
    700mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    160pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    1.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    3.4nC @ 4.5V
  • Rise Time
    4.2ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.7V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    4.2 ns
  • Turn-Off Delay Time
    7.8 ns
  • Continuous Drain Current (ID)
    1.7A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    20V
  • Dual Supply Voltage
    20V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    700 mV
  • Height
    1.1mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXM61N02FTA Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 160pF @ 15V.This device has a continuous drain current (ID) of [1.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 7.8 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Its overall power consumption can be reduced by using drive voltage (2.7V 4.5V).

ZXM61N02FTA Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 7.8 ns


ZXM61N02FTA Applications
There are a lot of Diodes Incorporated
ZXM61N02FTA applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
ZXM61N02FTA More Descriptions
ZXM61N02F 20 V 0.18 Ohm N-Channel Enhancement Mode Vertical DMOS FET - SOT-23
Trans MOSFET N-CH 20V 1.7A Automotive 3-Pin SOT-23 T/R
MOSFET N-Channel 20V 1.7A SOT23 | Diodes Inc ZXM61N02FTA
MOSFET, N SOT-23 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:1.7A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.7V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.4A; No. of Pins:3; Power, Pd:625W; Power, Ptot:625W; Quantity, Reel:3000; Resistance, Rds on Max:0.18ohm; SMD Marking:N02; Temperature, Current:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:20V; Voltage, Vgs th Min:0.7V; Width, Tape:8mm
Product Comparison
The three parts on the right have similar specifications to ZXM61N02FTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Qualification Status
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Configuration
    View Compare
  • ZXM61N02FTA
    ZXM61N02FTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    180mOhm
    Matte Tin (Sn)
    LOW THRESHOLD
    FET General Purpose Powers
    20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    1.7A
    40
    3
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    806mW
    2.4 ns
    N-Channel
    SWITCHING
    180m Ω @ 930mA, 4.5V
    700mV @ 250μA
    160pF @ 15V
    1.7A Ta
    3.4nC @ 4.5V
    4.2ns
    2.7V 4.5V
    ±12V
    4.2 ns
    7.8 ns
    1.7A
    12V
    20V
    20V
    150°C
    700 mV
    1.1mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • ZXM61P02FTC
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    -
    no
    Obsolete
    1 (Unlimited)
    3
    -
    EAR99
    -
    -
    -
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    -800mA
    NOT SPECIFIED
    3
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    2.9 ns
    P-Channel
    SWITCHING
    600m Ω @ 610mA, 4.5V
    1.5V @ 250μA
    150pF @ 15V
    900mA Ta
    3.5nC @ 4.5V
    6.7ns
    2.7V 4.5V
    ±12V
    6.7 ns
    11.2 ns
    900mA
    12V
    -20V
    -
    -
    -
    -
    -
    -
    No SVHC
    -
    RoHS Compliant
    Lead Free
    Not Qualified
    20V
    0.9A
    0.6Ohm
    -
  • ZXM66P03N8TA
    10 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    73.992255mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    EAR99
    25mOhm
    Matte Tin (Sn)
    -
    -
    -30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -7.9A
    40
    8
    1
    1
    1.56W Ta
    -
    ENHANCEMENT MODE
    2.5W
    7.6 ns
    P-Channel
    SWITCHING
    25m Ω @ 5.6A, 10V
    1V @ 250μA
    1979pF @ 25V
    6.25A Ta
    36nC @ 5V
    16.3ns
    4.5V 10V
    ±20V
    39.6 ns
    94.6 ns
    7.9A
    20V
    -30V
    -
    -
    -
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    30V
    6.25A
    -
    SINGLE WITH BUILT-IN DIODE
  • ZXM62P03E6TC
    -
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    14.996898mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    -
    EAR99
    -
    Matte Tin (Sn)
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    40
    6
    1
    1
    625mW Ta
    -
    ENHANCEMENT MODE
    625mW
    2.8 ns
    P-Channel
    SWITCHING
    230m Ω @ 800mA, 4.5V
    1V @ 250μA
    330pF @ 25V
    1.5A Ta
    10.2nC @ 10V
    6.4ns
    4.5V 10V
    ±20V
    6.4 ns
    13.9 ns
    1.5A
    12V
    -30V
    -
    -
    -
    1.3mm
    3.1mm
    1.8mm
    -
    No
    ROHS3 Compliant
    -
    -
    30V
    -
    -
    SINGLE WITH BUILT-IN DIODE
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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