Diodes Incorporated ZXM61P02FTA
- Part Number:
- ZXM61P02FTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478040-ZXM61P02FTA
- Description:
- MOSFET P-CH 20V 0.9A SOT23-3
- Datasheet:
- ZXM61P02FTA
Diodes Incorporated ZXM61P02FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXM61P02FTA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance600mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW THRESHOLD
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-800mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max625mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation625mW
- Turn On Delay Time2.9 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs600m Ω @ 610mA, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds150pF @ 15V
- Current - Continuous Drain (Id) @ 25°C900mA Ta
- Gate Charge (Qg) (Max) @ Vgs3.5nC @ 4.5V
- Rise Time6.7ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.7V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)6.7 ns
- Turn-Off Delay Time11.2 ns
- Continuous Drain Current (ID)900mA
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)0.9A
- Drain to Source Breakdown Voltage-20V
- Dual Supply Voltage-20V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs-700 mV
- Height1.1mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXM61P02FTA Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 150pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 900mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.9A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11.2 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 2.9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.7V 4.5V), this device helps reduce its overall power consumption.
ZXM61P02FTA Features
a continuous drain current (ID) of 900mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 11.2 ns
a 20V drain to source voltage (Vdss)
ZXM61P02FTA Applications
There are a lot of Diodes Incorporated
ZXM61P02FTA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 150pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 900mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.9A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11.2 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 2.9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.7V 4.5V), this device helps reduce its overall power consumption.
ZXM61P02FTA Features
a continuous drain current (ID) of 900mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 11.2 ns
a 20V drain to source voltage (Vdss)
ZXM61P02FTA Applications
There are a lot of Diodes Incorporated
ZXM61P02FTA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
ZXM61P02FTA More Descriptions
ZXM61P02F Series 20V 0.6 Ohm P-Channel Enhancement Mode Vertical DMOS FET-SOT-23
Mosfet Bvdss: 8V~24V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. ZXM61P02FTA
Trans MOSFET P-CH 20V 0.9A Automotive 3-Pin SOT-23 T/R
MOSFET P-Channel 20V 0.9A SOT23 | Diodes Inc ZXM61P02FTA
MOSFET, P SOT-23 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:0.9A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.7V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:4.9A; No. of Pins:3; Power, Pd:625W; Power, Ptot:625W; Quantity, Reel:3000; Resistance, Rds on Max:0.6ohm; SMD Marking:P02; Temperature, Current:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:20V; Voltage, Vgs th Min:-0.7V; Width, Tape:8mm
Mosfet Bvdss: 8V~24V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. ZXM61P02FTA
Trans MOSFET P-CH 20V 0.9A Automotive 3-Pin SOT-23 T/R
MOSFET P-Channel 20V 0.9A SOT23 | Diodes Inc ZXM61P02FTA
MOSFET, P SOT-23 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:0.9A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.7V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:4.9A; No. of Pins:3; Power, Pd:625W; Power, Ptot:625W; Quantity, Reel:3000; Resistance, Rds on Max:0.6ohm; SMD Marking:P02; Temperature, Current:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:20V; Voltage, Vgs th Min:-0.7V; Width, Tape:8mm
The three parts on the right have similar specifications to ZXM61P02FTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeQualification StatusDrain-source On Resistance-MaxConfigurationReach Compliance CodeJESD-30 CodeCase ConnectionView Compare
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ZXM61P02FTA17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3SMD/SMTEAR99600mOhmMatte Tin (Sn)LOW THRESHOLDOther Transistors-20VMOSFET (Metal Oxide)DUALGULL WING260-800mA40311625mW TaSingleENHANCEMENT MODE625mW2.9 nsP-ChannelSWITCHING600m Ω @ 610mA, 4.5V1.5V @ 250μA150pF @ 15V900mA Ta3.5nC @ 4.5V6.7ns20V2.7V 4.5V±12V6.7 ns11.2 ns900mA12V0.9A-20V-20V150°C-700 mV1.1mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free-------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012-noObsolete1 (Unlimited)3-EAR99---Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIED-800mANOT SPECIFIED311625mW TaSingleENHANCEMENT MODE625mW2.9 nsP-ChannelSWITCHING600m Ω @ 610mA, 4.5V1.5V @ 250μA150pF @ 15V900mA Ta3.5nC @ 4.5V6.7ns20V2.7V 4.5V±12V6.7 ns11.2 ns900mA12V0.9A-20V------No SVHC-RoHS CompliantLead FreeNot Qualified0.6Ohm----
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-Surface MountSurface MountSOT-23-6614.996898mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)6-EAR99-Matte Tin (Sn)---MOSFET (Metal Oxide)DUALGULL WING260-40611625mW Ta-ENHANCEMENT MODE625mW2.8 nsP-ChannelSWITCHING230m Ω @ 800mA, 4.5V1V @ 250μA330pF @ 25V1.5A Ta10.2nC @ 10V6.4ns30V4.5V 10V±20V6.4 ns13.9 ns1.5A12V--30V---1.3mm3.1mm1.8mm-NoROHS3 Compliant---SINGLE WITH BUILT-IN DIODE---
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-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)4-EAR99-Matte Tin (Sn)LOW THRESHOLD-35VMOSFET (Metal Oxide)DUALGULL WING2606.7A404112W Ta-ENHANCEMENT MODE2W4.2 nsN-ChannelSWITCHING50m Ω @ 3.7A, 10V1V @ 250μA950pF @ 25V4.8A Ta 6.7A Tc27nC @ 10V4.6ns-4.5V 10V±20V8 ns20.5 ns6.7A20V4.8A35V---1.65mm6.7mm3.7mm--RoHS CompliantContains LeadNot Qualified0.05OhmSINGLE WITH BUILT-IN DIODEunknownR-PDSO-G4DRAIN
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