ZXM61P02FTA

Diodes Incorporated ZXM61P02FTA

Part Number:
ZXM61P02FTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478040-ZXM61P02FTA
Description:
MOSFET P-CH 20V 0.9A SOT23-3
ECAD Model:
Datasheet:
ZXM61P02FTA

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Specifications
Diodes Incorporated ZXM61P02FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXM61P02FTA.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    600mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    LOW THRESHOLD
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -800mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    625mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    625mW
  • Turn On Delay Time
    2.9 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    600m Ω @ 610mA, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    150pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    900mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    3.5nC @ 4.5V
  • Rise Time
    6.7ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.7V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    6.7 ns
  • Turn-Off Delay Time
    11.2 ns
  • Continuous Drain Current (ID)
    900mA
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    0.9A
  • Drain to Source Breakdown Voltage
    -20V
  • Dual Supply Voltage
    -20V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -700 mV
  • Height
    1.1mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXM61P02FTA Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 150pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 900mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.9A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11.2 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 2.9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.7V 4.5V), this device helps reduce its overall power consumption.

ZXM61P02FTA Features
a continuous drain current (ID) of 900mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 11.2 ns
a 20V drain to source voltage (Vdss)


ZXM61P02FTA Applications
There are a lot of Diodes Incorporated
ZXM61P02FTA applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
ZXM61P02FTA More Descriptions
ZXM61P02F Series 20V 0.6 Ohm P-Channel Enhancement Mode Vertical DMOS FET-SOT-23
Mosfet Bvdss: 8V~24V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. ZXM61P02FTA
Trans MOSFET P-CH 20V 0.9A Automotive 3-Pin SOT-23 T/R
MOSFET P-Channel 20V 0.9A SOT23 | Diodes Inc ZXM61P02FTA
MOSFET, P SOT-23 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:0.9A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.7V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:4.9A; No. of Pins:3; Power, Pd:625W; Power, Ptot:625W; Quantity, Reel:3000; Resistance, Rds on Max:0.6ohm; SMD Marking:P02; Temperature, Current:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:20V; Voltage, Vgs th Min:-0.7V; Width, Tape:8mm
Product Comparison
The three parts on the right have similar specifications to ZXM61P02FTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Qualification Status
    Drain-source On Resistance-Max
    Configuration
    Reach Compliance Code
    JESD-30 Code
    Case Connection
    View Compare
  • ZXM61P02FTA
    ZXM61P02FTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    600mOhm
    Matte Tin (Sn)
    LOW THRESHOLD
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -800mA
    40
    3
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    2.9 ns
    P-Channel
    SWITCHING
    600m Ω @ 610mA, 4.5V
    1.5V @ 250μA
    150pF @ 15V
    900mA Ta
    3.5nC @ 4.5V
    6.7ns
    20V
    2.7V 4.5V
    ±12V
    6.7 ns
    11.2 ns
    900mA
    12V
    0.9A
    -20V
    -20V
    150°C
    -700 mV
    1.1mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • ZXM61P02FTC
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    -
    no
    Obsolete
    1 (Unlimited)
    3
    -
    EAR99
    -
    -
    -
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    -800mA
    NOT SPECIFIED
    3
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    2.9 ns
    P-Channel
    SWITCHING
    600m Ω @ 610mA, 4.5V
    1.5V @ 250μA
    150pF @ 15V
    900mA Ta
    3.5nC @ 4.5V
    6.7ns
    20V
    2.7V 4.5V
    ±12V
    6.7 ns
    11.2 ns
    900mA
    12V
    0.9A
    -20V
    -
    -
    -
    -
    -
    -
    No SVHC
    -
    RoHS Compliant
    Lead Free
    Not Qualified
    0.6Ohm
    -
    -
    -
    -
  • ZXM62P03E6TC
    -
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    14.996898mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    -
    EAR99
    -
    Matte Tin (Sn)
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    40
    6
    1
    1
    625mW Ta
    -
    ENHANCEMENT MODE
    625mW
    2.8 ns
    P-Channel
    SWITCHING
    230m Ω @ 800mA, 4.5V
    1V @ 250μA
    330pF @ 25V
    1.5A Ta
    10.2nC @ 10V
    6.4ns
    30V
    4.5V 10V
    ±20V
    6.4 ns
    13.9 ns
    1.5A
    12V
    -
    -30V
    -
    -
    -
    1.3mm
    3.1mm
    1.8mm
    -
    No
    ROHS3 Compliant
    -
    -
    -
    SINGLE WITH BUILT-IN DIODE
    -
    -
    -
  • ZXM64N035GTA
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    4
    -
    EAR99
    -
    Matte Tin (Sn)
    LOW THRESHOLD
    -
    35V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    6.7A
    40
    4
    1
    1
    2W Ta
    -
    ENHANCEMENT MODE
    2W
    4.2 ns
    N-Channel
    SWITCHING
    50m Ω @ 3.7A, 10V
    1V @ 250μA
    950pF @ 25V
    4.8A Ta 6.7A Tc
    27nC @ 10V
    4.6ns
    -
    4.5V 10V
    ±20V
    8 ns
    20.5 ns
    6.7A
    20V
    4.8A
    35V
    -
    -
    -
    1.65mm
    6.7mm
    3.7mm
    -
    -
    RoHS Compliant
    Contains Lead
    Not Qualified
    0.05Ohm
    SINGLE WITH BUILT-IN DIODE
    unknown
    R-PDSO-G4
    DRAIN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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