Diodes Incorporated ZVP0120ASTOA
- Part Number:
- ZVP0120ASTOA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3813757-ZVP0120ASTOA
- Description:
- MOSFET P-CH 200V 0.11A TO92-3
- Datasheet:
- ZVP0120A
Diodes Incorporated ZVP0120ASTOA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP0120ASTOA.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Supplier Device PackageE-Line (TO-92 compatible)
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-200V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-110mA
- Power Dissipation-Max700mW Ta
- Element ConfigurationSingle
- Power Dissipation700mW
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs32Ohm @ 125mA, 10V
- Vgs(th) (Max) @ Id3.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C110mA Ta
- Rise Time15ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)110mA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-200V
- Input Capacitance100pF
- Drain to Source Resistance32Ohm
- Rds On Max32 Ω
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZVP0120ASTOA Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110mA.With a drain-source breakdown voltage of -200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 32Ohm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
ZVP0120ASTOA Features
a continuous drain current (ID) of 110mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 32Ohm
a 200V drain to source voltage (Vdss)
ZVP0120ASTOA Applications
There are a lot of Diodes Incorporated
ZVP0120ASTOA applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110mA.With a drain-source breakdown voltage of -200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 32Ohm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
ZVP0120ASTOA Features
a continuous drain current (ID) of 110mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 32Ohm
a 200V drain to source voltage (Vdss)
ZVP0120ASTOA Applications
There are a lot of Diodes Incorporated
ZVP0120ASTOA applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
ZVP0120ASTOA More Descriptions
Compliant Through Hole 15 ns Lead Free Tape & Reel (TR) 15 ns 32 Ω TO-92
MOSFET P-CH 200V 0.11A TO92-3
MOSFET P-CH 200V 110MA E-LINE
MOSFETs P-Chnl 200V
MOSFET P-CH 200V 0.11A TO92-3
MOSFET P-CH 200V 110MA E-LINE
MOSFETs P-Chnl 200V
The three parts on the right have similar specifications to ZVP0120ASTOA.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackagePackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingPower Dissipation-MaxElement ConfigurationPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRoHS StatusLead FreeWeightTransistor Element MaterialOperating TemperaturePublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsNumber of ChannelsOperating ModeTurn On Delay TimeTransistor ApplicationDrain Current-Max (Abs) (ID)Factory Lead TimePbfree CodeHeightLengthWidthREACH SVHCRadiation HardeningView Compare
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ZVP0120ASTOAThrough HoleThrough HoleE-Line-3E-Line (TO-92 compatible)Tape & Reel (TR)Obsolete1 (Unlimited)150°C-55°C-200VMOSFET (Metal Oxide)-110mA700mW TaSingle700mWP-Channel32Ohm @ 125mA, 10V3.5V @ 1mA100pF @ 25V110mA Ta15ns200V10V±20V15 ns12 ns110mA20V-200V100pF32Ohm32 ΩRoHS CompliantLead Free-----------------------------
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Through HoleThrough HoleE-Line-3-Tape & Reel (TR)Obsolete1 (Unlimited)---450VMOSFET (Metal Oxide)-45mA700mW TaSingle700mWP-Channel150 Ω @ 50mA, 10V4.5V @ 1mA120pF @ 25V45mA Ta15ns450V10V±20V15 ns15 ns45mA20V----RoHS CompliantLead Free453.59237mgSILICON-55°C~150°C TJ2012e33EAR99MATTE TINWIRE260unknown403R-PSIP-W3Not Qualified11ENHANCEMENT MODE10 nsSWITCHING0.045A-------
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Through HoleThrough HoleE-Line-3-Tape & Reel (TR)Obsolete1 (Unlimited)---450VMOSFET (Metal Oxide)-45mA700mW TaSingle700mWP-Channel150 Ω @ 50mA, 10V4.5V @ 1mA120pF @ 25V45mA Ta15ns450V10V±20V15 ns15 ns45mA20V-350V---RoHS CompliantLead Free453.59237mg--55°C~150°C TJ2006------unknown-3---1-10 ns---------
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Through HoleThrough HoleE-Line-3-Tape & Box (TB)Active1 (Unlimited)---450VMOSFET (Metal Oxide)-45mA700mW TaSingle700mWP-Channel150 Ω @ 50mA, 10V4.5V @ 1mA120pF @ 25V45mA Ta15ns450V10V±20V15 ns15 ns45mA20V----ROHS3 CompliantLead Free453.59237mgSILICON-55°C~150°C TJ2001e33EAR99Matte Tin (Sn)WIRE260-403R-PSIP-W3-11ENHANCEMENT MODE10 nsSWITCHING0.045A17 Weeksyes4.01mm4.77mm2.41mmNo SVHCNo
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