ZVP0120ASTOA

Diodes Incorporated ZVP0120ASTOA

Part Number:
ZVP0120ASTOA
Manufacturer:
Diodes Incorporated
Ventron No:
3813757-ZVP0120ASTOA
Description:
MOSFET P-CH 200V 0.11A TO92-3
ECAD Model:
Datasheet:
ZVP0120A

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Specifications
Diodes Incorporated ZVP0120ASTOA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP0120ASTOA.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    E-Line-3
  • Supplier Device Package
    E-Line (TO-92 compatible)
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -200V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -110mA
  • Power Dissipation-Max
    700mW Ta
  • Element Configuration
    Single
  • Power Dissipation
    700mW
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    32Ohm @ 125mA, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    100pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    110mA Ta
  • Rise Time
    15ns
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    12 ns
  • Continuous Drain Current (ID)
    110mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -200V
  • Input Capacitance
    100pF
  • Drain to Source Resistance
    32Ohm
  • Rds On Max
    32 Ω
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
ZVP0120ASTOA Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110mA.With a drain-source breakdown voltage of -200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 32Ohm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

ZVP0120ASTOA Features
a continuous drain current (ID) of 110mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 32Ohm
a 200V drain to source voltage (Vdss)


ZVP0120ASTOA Applications
There are a lot of Diodes Incorporated
ZVP0120ASTOA applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
ZVP0120ASTOA More Descriptions
Compliant Through Hole 15 ns Lead Free Tape & Reel (TR) 15 ns 32 Ω TO-92
MOSFET P-CH 200V 0.11A TO92-3
MOSFET P-CH 200V 110MA E-LINE
MOSFETs P-Chnl 200V
Product Comparison
The three parts on the right have similar specifications to ZVP0120ASTOA.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Supplier Device Package
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    RoHS Status
    Lead Free
    Weight
    Transistor Element Material
    Operating Temperature
    Published
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Number of Channels
    Operating Mode
    Turn On Delay Time
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Factory Lead Time
    Pbfree Code
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    View Compare
  • ZVP0120ASTOA
    ZVP0120ASTOA
    Through Hole
    Through Hole
    E-Line-3
    E-Line (TO-92 compatible)
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -200V
    MOSFET (Metal Oxide)
    -110mA
    700mW Ta
    Single
    700mW
    P-Channel
    32Ohm @ 125mA, 10V
    3.5V @ 1mA
    100pF @ 25V
    110mA Ta
    15ns
    200V
    10V
    ±20V
    15 ns
    12 ns
    110mA
    20V
    -200V
    100pF
    32Ohm
    32 Ω
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVP0545ASTOB
    Through Hole
    Through Hole
    E-Line-3
    -
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    -
    -
    -450V
    MOSFET (Metal Oxide)
    -45mA
    700mW Ta
    Single
    700mW
    P-Channel
    150 Ω @ 50mA, 10V
    4.5V @ 1mA
    120pF @ 25V
    45mA Ta
    15ns
    450V
    10V
    ±20V
    15 ns
    15 ns
    45mA
    20V
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    453.59237mg
    SILICON
    -55°C~150°C TJ
    2012
    e3
    3
    EAR99
    MATTE TIN
    WIRE
    260
    unknown
    40
    3
    R-PSIP-W3
    Not Qualified
    1
    1
    ENHANCEMENT MODE
    10 ns
    SWITCHING
    0.045A
    -
    -
    -
    -
    -
    -
    -
  • ZVP0545ASTOA
    Through Hole
    Through Hole
    E-Line-3
    -
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    -
    -
    -450V
    MOSFET (Metal Oxide)
    -45mA
    700mW Ta
    Single
    700mW
    P-Channel
    150 Ω @ 50mA, 10V
    4.5V @ 1mA
    120pF @ 25V
    45mA Ta
    15ns
    450V
    10V
    ±20V
    15 ns
    15 ns
    45mA
    20V
    -350V
    -
    -
    -
    RoHS Compliant
    Lead Free
    453.59237mg
    -
    -55°C~150°C TJ
    2006
    -
    -
    -
    -
    -
    -
    unknown
    -
    3
    -
    -
    -
    1
    -
    10 ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVP0545ASTZ
    Through Hole
    Through Hole
    E-Line-3
    -
    Tape & Box (TB)
    Active
    1 (Unlimited)
    -
    -
    -450V
    MOSFET (Metal Oxide)
    -45mA
    700mW Ta
    Single
    700mW
    P-Channel
    150 Ω @ 50mA, 10V
    4.5V @ 1mA
    120pF @ 25V
    45mA Ta
    15ns
    450V
    10V
    ±20V
    15 ns
    15 ns
    45mA
    20V
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    453.59237mg
    SILICON
    -55°C~150°C TJ
    2001
    e3
    3
    EAR99
    Matte Tin (Sn)
    WIRE
    260
    -
    40
    3
    R-PSIP-W3
    -
    1
    1
    ENHANCEMENT MODE
    10 ns
    SWITCHING
    0.045A
    17 Weeks
    yes
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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