Diodes Incorporated ZVNL110GTA
- Part Number:
- ZVNL110GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478348-ZVNL110GTA
- Description:
- MOSFET N-CH 100V 600MA SOT223
- Datasheet:
- ZVNL110GTA
Diodes Incorporated ZVNL110GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVNL110GTA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance4.5Ohm
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating600mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.1W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Case ConnectionDRAIN
- Turn On Delay Time7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id1.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds75pF @ 25V
- Current - Continuous Drain (Id) @ 25°C600mA Ta
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)600mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.6A
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)6A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVNL110GTA Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 75pF @ 25V.This device conducts a continuous drain current (ID) of 600mA, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.6A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 6A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
ZVNL110GTA Features
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 6A.
ZVNL110GTA Applications
There are a lot of Diodes Incorporated
ZVNL110GTA applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 75pF @ 25V.This device conducts a continuous drain current (ID) of 600mA, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.6A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 6A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
ZVNL110GTA Features
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 6A.
ZVNL110GTA Applications
There are a lot of Diodes Incorporated
ZVNL110GTA applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
ZVNL110GTA More Descriptions
Trans MOSFET N-CH 100V 0.6A Automotive 4-Pin(3 Tab) SOT-223 T/R
ZVNL110G 100 V 4.5 Ohm N-Channel Enhancement Mode Vertical DMOS FET - SOT-223
Mosfet, N-Ch, 100V, 0.6A, Sot-223 Rohs Compliant: Yes |Diodes Inc. ZVNL110GTA
ZVNL110G 100 V 4.5 Ohm N-Channel Enhancement Mode Vertical DMOS FET - SOT-223
Mosfet, N-Ch, 100V, 0.6A, Sot-223 Rohs Compliant: Yes |Diodes Inc. ZVNL110GTA
The three parts on the right have similar specifications to ZVNL110GTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodeQualification StatusConfigurationView Compare
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ZVNL110GTA17 WeeksSurface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR994.5OhmMatte Tin (Sn)100VMOSFET (Metal Oxide)DUALGULL WING260600mA404R-PDSO-G4111.1W TaSingleENHANCEMENT MODE2WDRAIN7 nsN-ChannelSWITCHING3 Ω @ 500mA, 10V1.5V @ 1mA75pF @ 25V600mA Ta12ns5V 10V±20V13 ns15 ns600mA20V0.6A100V6A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-----
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-Through HoleThrough HoleE-Line-3-SILICON-Tape & Box (TB)-e3-Obsolete1 (Unlimited)3EAR99-MATTE TIN200VMOSFET (Metal Oxide)SINGLEWIRE260180mA403R-PSIP-W31-700mW Ta-ENHANCEMENT MODE700mW--N-ChannelSWITCHING10 Ω @ 250mA, 5V1.5V @ 1mA85pF @ 25V180mA Ta-3V 5V±20V--180mA20V0.18A200V------RoHS CompliantLead Free8541.29.00.95unknownNot QualifiedSINGLE
-
-Through HoleThrough HoleE-Line-3-SILICON-Tape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99-MATTE TIN200VMOSFET (Metal Oxide)SINGLEWIRE260180mA403R-PSIP-W31-700mW Ta-ENHANCEMENT MODE700mW--N-ChannelSWITCHING10 Ω @ 250mA, 5V1.5V @ 1mA85pF @ 25V180mA Ta-3V 5V±20V--180mA20V0.18A200V------RoHS CompliantLead Free8541.29.00.95unknownNot QualifiedSINGLE
-
-Surface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)4EAR99-Matte Tin (Sn)200VMOSFET (Metal Oxide)DUALGULL WING260320mA304R-PDSO-G4112W Ta-ENHANCEMENT MODE2WDRAIN8 nsN-ChannelSWITCHING10 Ω @ 250mA, 5V1.5V @ 1mA85pF @ 25V320mA Ta8ns3V 5V±20V12 ns20 ns320mA20V0.32A200V2A1.65mm6.7mm3.7mmNo SVHC-ROHS3 CompliantLead Free-not_compliantNot QualifiedSINGLE
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