ZVNL110GTA

Diodes Incorporated ZVNL110GTA

Part Number:
ZVNL110GTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478348-ZVNL110GTA
Description:
MOSFET N-CH 100V 600MA SOT223
ECAD Model:
Datasheet:
ZVNL110GTA

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Specifications
Diodes Incorporated ZVNL110GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVNL110GTA.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    4.5Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    600mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    4
  • JESD-30 Code
    R-PDSO-G4
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.1W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    1.5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    75pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    600mA Ta
  • Rise Time
    12ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    600mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.6A
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    6A
  • Height
    1.65mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVNL110GTA Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 75pF @ 25V.This device conducts a continuous drain current (ID) of 600mA, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.6A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 6A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).

ZVNL110GTA Features
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 6A.


ZVNL110GTA Applications
There are a lot of Diodes Incorporated
ZVNL110GTA applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
ZVNL110GTA More Descriptions
Trans MOSFET N-CH 100V 0.6A Automotive 4-Pin(3 Tab) SOT-223 T/R
ZVNL110G 100 V 4.5 Ohm N-Channel Enhancement Mode Vertical DMOS FET - SOT-223
Mosfet, N-Ch, 100V, 0.6A, Sot-223 Rohs Compliant: Yes |Diodes Inc. ZVNL110GTA
Product Comparison
The three parts on the right have similar specifications to ZVNL110GTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    HTS Code
    Reach Compliance Code
    Qualification Status
    Configuration
    View Compare
  • ZVNL110GTA
    ZVNL110GTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    4.5Ohm
    Matte Tin (Sn)
    100V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    600mA
    40
    4
    R-PDSO-G4
    1
    1
    1.1W Ta
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    7 ns
    N-Channel
    SWITCHING
    3 Ω @ 500mA, 10V
    1.5V @ 1mA
    75pF @ 25V
    600mA Ta
    12ns
    5V 10V
    ±20V
    13 ns
    15 ns
    600mA
    20V
    0.6A
    100V
    6A
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • ZVNL120CSTZ
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    SILICON
    -
    Tape & Box (TB)
    -
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    MATTE TIN
    200V
    MOSFET (Metal Oxide)
    SINGLE
    WIRE
    260
    180mA
    40
    3
    R-PSIP-W3
    1
    -
    700mW Ta
    -
    ENHANCEMENT MODE
    700mW
    -
    -
    N-Channel
    SWITCHING
    10 Ω @ 250mA, 5V
    1.5V @ 1mA
    85pF @ 25V
    180mA Ta
    -
    3V 5V
    ±20V
    -
    -
    180mA
    20V
    0.18A
    200V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    8541.29.00.95
    unknown
    Not Qualified
    SINGLE
  • ZVNL120CSTOB
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    SILICON
    -
    Tape & Reel (TR)
    -
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    MATTE TIN
    200V
    MOSFET (Metal Oxide)
    SINGLE
    WIRE
    260
    180mA
    40
    3
    R-PSIP-W3
    1
    -
    700mW Ta
    -
    ENHANCEMENT MODE
    700mW
    -
    -
    N-Channel
    SWITCHING
    10 Ω @ 250mA, 5V
    1.5V @ 1mA
    85pF @ 25V
    180mA Ta
    -
    3V 5V
    ±20V
    -
    -
    180mA
    20V
    0.18A
    200V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    8541.29.00.95
    unknown
    Not Qualified
    SINGLE
  • ZVNL120GTC
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    4
    EAR99
    -
    Matte Tin (Sn)
    200V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    320mA
    30
    4
    R-PDSO-G4
    1
    1
    2W Ta
    -
    ENHANCEMENT MODE
    2W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    10 Ω @ 250mA, 5V
    1.5V @ 1mA
    85pF @ 25V
    320mA Ta
    8ns
    3V 5V
    ±20V
    12 ns
    20 ns
    320mA
    20V
    0.32A
    200V
    2A
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    not_compliant
    Not Qualified
    SINGLE
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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