Diodes Incorporated ZVNL110ASTOA
- Part Number:
- ZVNL110ASTOA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2488736-ZVNL110ASTOA
- Description:
- MOSFET N-CH 100V 320MA TO92-3
- Datasheet:
- ZVNL110ASTOA
Diodes Incorporated ZVNL110ASTOA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVNL110ASTOA.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating320mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSIP-W3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max700mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation700mW
- Turn On Delay Time7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id1.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds75pF @ 25V
- Current - Continuous Drain (Id) @ 25°C320mA Ta
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)320mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.32A
- Drain-source On Resistance-Max4.5Ohm
- Drain to Source Breakdown Voltage100V
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZVNL110ASTOA Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 75pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 320mA.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.0.32A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (5V 10V) reduces this device's overall power consumption.
ZVNL110ASTOA Features
a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
ZVNL110ASTOA Applications
There are a lot of Diodes Incorporated
ZVNL110ASTOA applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 75pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 320mA.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.0.32A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (5V 10V) reduces this device's overall power consumption.
ZVNL110ASTOA Features
a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
ZVNL110ASTOA Applications
There are a lot of Diodes Incorporated
ZVNL110ASTOA applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
ZVNL110ASTOA More Descriptions
MOSFET N-CH 100V 320MA TO92-3
Compliant Through Hole 453.59237 mg 12 ns Lead Free Bulk 12 ns 3 Ω
Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Compliant Through Hole 453.59237 mg 12 ns Lead Free Bulk 12 ns 3 Ω
Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
The three parts on the right have similar specifications to ZVNL110ASTOA.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageRoHS StatusLead FreeReach Compliance CodeHTS CodeTerminal PositionConfigurationCase ConnectionPulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCView Compare
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ZVNL110ASTOAThrough HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)3EAR99MATTE TIN100VMOSFET (Metal Oxide)WIRE260320mA403R-PSIP-W3Not Qualified11700mW TaSingleENHANCEMENT MODE700mW7 nsN-ChannelSWITCHING3 Ω @ 500mA, 10V1.5V @ 1mA75pF @ 25V320mA Ta12ns5V 10V±20V12 ns15 ns320mA20V0.32A4.5Ohm100VRoHS CompliantLead Free-----------
-
Through HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)3EAR99MATTE TIN200VMOSFET (Metal Oxide)WIRE260180mA403R-PSIP-W3Not Qualified11700mW TaSingleENHANCEMENT MODE700mW8 nsN-ChannelSWITCHING10 Ω @ 250mA, 10V1.5V @ 1mA85pF @ 25V180mA Ta8ns3V 5V±20V8 ns20 ns180mA20V--200VRoHS CompliantLead Freeunknown---------
-
Through HoleThrough HoleE-Line-3-SILICON-Tape & Reel (TR)-e3Obsolete1 (Unlimited)3EAR99MATTE TIN200VMOSFET (Metal Oxide)WIRE260180mA403R-PSIP-W3Not Qualified1-700mW Ta-ENHANCEMENT MODE700mW-N-ChannelSWITCHING10 Ω @ 250mA, 5V1.5V @ 1mA85pF @ 25V180mA Ta-3V 5V±20V--180mA20V0.18A-200VRoHS CompliantLead Freeunknown8541.29.00.95SINGLESINGLE------
-
Surface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)4EAR99Matte Tin (Sn)200VMOSFET (Metal Oxide)GULL WING260320mA304R-PDSO-G4Not Qualified112W Ta-ENHANCEMENT MODE2W8 nsN-ChannelSWITCHING10 Ω @ 250mA, 5V1.5V @ 1mA85pF @ 25V320mA Ta8ns3V 5V±20V12 ns20 ns320mA20V0.32A-200VROHS3 CompliantLead Freenot_compliant-DUALSINGLEDRAIN2A1.65mm6.7mm3.7mmNo SVHC
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