Diodes Incorporated ZVN4424ASTZ
- Part Number:
- ZVN4424ASTZ
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2486080-ZVN4424ASTZ
- Description:
- MOSFET N-CH 240V 0.26A TO92-3
- Datasheet:
- ZVN4424ASTZ
Diodes Incorporated ZVN4424ASTZ technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN4424ASTZ.
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Published2001
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC240V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating260mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max750mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation750mW
- Turn On Delay Time2.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id1.8V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C260mA Ta
- Rise Time5ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 10V
- Vgs (Max)±40V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)260mA
- Gate to Source Voltage (Vgs)40V
- Drain Current-Max (Abs) (ID)0.26A
- Drain-source On Resistance-Max6Ohm
- Drain to Source Breakdown Voltage240V
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVN4424ASTZ Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 200pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 260mA.With a drain-source breakdown voltage of 240V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 240V.0.26A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 40 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 2.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (2.5V 10V) reduces this device's overall power consumption.
ZVN4424ASTZ Features
a continuous drain current (ID) of 260mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 40 ns
ZVN4424ASTZ Applications
There are a lot of Diodes Incorporated
ZVN4424ASTZ applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 200pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 260mA.With a drain-source breakdown voltage of 240V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 240V.0.26A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 40 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 2.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (2.5V 10V) reduces this device's overall power consumption.
ZVN4424ASTZ Features
a continuous drain current (ID) of 260mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 40 ns
ZVN4424ASTZ Applications
There are a lot of Diodes Incorporated
ZVN4424ASTZ applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
ZVN4424ASTZ More Descriptions
Single N-Channel 240 V 6 Ohm 750 mW Silicon Mosfet - TO-92
Trans MOSFET N-CH 240V 0.26A Automotive 3-Pin E-Line Box
240V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET, 240 V, RoHSDiodes Inc SCT
Small Signal Field-Effect Transistor, 0.26A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet Bvdss: 101V~250V Ep3Sc T&r 2K
Trans MOSFET N-CH 240V 0.26A Automotive 3-Pin E-Line Box
240V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET, 240 V, RoHSDiodes Inc SCT
Small Signal Field-Effect Transistor, 0.26A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet Bvdss: 101V~250V Ep3Sc T&r 2K
The three parts on the right have similar specifications to ZVN4424ASTZ.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeResistanceSubcategoryTerminal PositionVoltageCurrentCase ConnectionThreshold VoltageAdditional FeatureJESD-30 CodeReach Compliance CodeQualification StatusView Compare
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ZVN4424ASTZ17 WeeksThrough HoleThrough HoleE-Line-33453.59237mgSILICON-55°C~150°C TJTape & Box (TB)2001e3noActive1 (Unlimited)3EAR99Matte Tin (Sn)240VMOSFET (Metal Oxide)WIRE260260mA40311750mW TaSingleENHANCEMENT MODE750mW2.5 nsN-ChannelSWITCHING5.5 Ω @ 500mA, 10V1.8V @ 1mA200pF @ 25V260mA Ta5ns2.5V 10V±40V5 ns40 ns260mA40V0.26A6Ohm240V4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free------------
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16 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)100VMOSFET (Metal Oxide)GULL WING2601.7A404113W TaSingleENHANCEMENT MODE3W8 nsN-ChannelSWITCHING540m Ω @ 3.3A, 10V3V @ 1mA350pF @ 25V1.67A Ta25ns5V 10V±20V16 ns30 ns1.67A20V--100V1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free540mOhmFET General Purpose PowerDUAL100V15ADRAIN1V----
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17 WeeksSurface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)60VMOSFET (Metal Oxide)GULL WING2602.1A40-113W TaSingleENHANCEMENT MODE3W8 nsN-ChannelSWITCHING330m Ω @ 3A, 10V3V @ 1mA350pF @ 25V2.1A Ta25ns5V 10V±20V16 ns30 ns2.1A20V--60V1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free330mOhm-DUAL--DRAIN-AVALANCHE RATEDR-PDSO-G4--
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-Through HoleThrough HoleE-Line-3-453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3-Obsolete1 (Unlimited)3EAR99MATTE TIN240VMOSFET (Metal Oxide)WIRE260260mA40311750mW TaSingleENHANCEMENT MODE750mW2.5 nsN-ChannelSWITCHING5.5 Ω @ 500mA, 10V1.8V @ 1mA200pF @ 25V260mA Ta5ns2.5V 10V±40V5 ns40 ns260mA40V0.26A6Ohm240V-----RoHS CompliantLead Free--------R-PSIP-W3unknownNot Qualified
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