ZVN4106FTA

Diodes Incorporated ZVN4106FTA

Part Number:
ZVN4106FTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478097-ZVN4106FTA
Description:
MOSFET N-CH 60V 200MA SOT23-3
ECAD Model:
Datasheet:
ZVN4106FTA

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Diodes Incorporated ZVN4106FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN4106FTA.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    5Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    200mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    350mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    350mW
  • Turn On Delay Time
    5 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    2.5 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    35pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    200mA Ta
  • Rise Time
    7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7 ns
  • Turn-Off Delay Time
    6 ns
  • Continuous Drain Current (ID)
    200mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.2A
  • Drain to Source Breakdown Voltage
    60V
  • Feedback Cap-Max (Crss)
    8 pF
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVN4106FTA Overview
A device's maximal input capacitance is 35pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 200mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 6 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).

ZVN4106FTA Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns


ZVN4106FTA Applications
There are a lot of Diodes Incorporated
ZVN4106FTA applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
ZVN4106FTA More Descriptions
ZVN4106F Series 60 V 5 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-23
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R
MOSFET N-Channel 60V 0.2A SOT23 | Diodes Inc ZVN4106FTA
Product Comparison
The three parts on the right have similar specifications to ZVN4106FTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Reach Compliance Code
    Pin Count
    JESD-30 Code
    Qualification Status
    Transistor Application
    Drain-source On Resistance-Max
    Contact Plating
    Additional Feature
    Case Connection
    Pulsed Drain Current-Max (IDM)
    View Compare
  • ZVN4106FTA
    ZVN4106FTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    5Ohm
    Matte Tin (Sn)
    FET General Purpose Powers
    60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    200mA
    40
    1
    1
    350mW Ta
    Single
    ENHANCEMENT MODE
    350mW
    5 ns
    N-Channel
    2.5 Ω @ 500mA, 10V
    3V @ 1mA
    35pF @ 25V
    200mA Ta
    7ns
    5V 10V
    ±20V
    7 ns
    6 ns
    200mA
    20V
    0.2A
    60V
    8 pF
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN4424ASTOB
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    MATTE TIN
    -
    240V
    MOSFET (Metal Oxide)
    -
    WIRE
    260
    260mA
    40
    1
    1
    750mW Ta
    Single
    ENHANCEMENT MODE
    750mW
    2.5 ns
    N-Channel
    5.5 Ω @ 500mA, 10V
    1.8V @ 1mA
    200pF @ 25V
    260mA Ta
    5ns
    2.5V 10V
    ±40V
    5 ns
    40 ns
    260mA
    40V
    0.26A
    240V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    unknown
    3
    R-PSIP-W3
    Not Qualified
    SWITCHING
    6Ohm
    -
    -
    -
    -
  • ZVN4310ASTOB
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    1997
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    MATTE TIN
    -
    100V
    MOSFET (Metal Oxide)
    -
    WIRE
    260
    900mA
    40
    1
    1
    850mW Ta
    Single
    ENHANCEMENT MODE
    850mW
    8 ns
    N-Channel
    500m Ω @ 3A, 10V
    3V @ 1mA
    350pF @ 25V
    900mA Ta
    25ns
    5V 10V
    ±20V
    25 ns
    30 ns
    900mA
    20V
    0.9A
    100V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    unknown
    3
    R-PSIP-W3
    Not Qualified
    SWITCHING
    0.65Ohm
    -
    -
    -
    -
  • ZVN4206GTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    1Ohm
    -
    FET General Purpose Powers
    60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    1A
    40
    1
    1
    2W Ta
    Single
    ENHANCEMENT MODE
    2W
    8 ns
    N-Channel
    1 Ω @ 1.5A, 10V
    3V @ 1mA
    100pF @ 25V
    1A Ta
    12ns
    5V 10V
    ±20V
    15 ns
    12 ns
    1A
    20V
    1A
    60V
    -
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    4
    R-PDSO-G4
    -
    SWITCHING
    -
    Tin
    FAST SWITCHING
    DRAIN
    8A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.