Diodes Incorporated ZVN4106FTA
- Part Number:
- ZVN4106FTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478097-ZVN4106FTA
- Description:
- MOSFET N-CH 60V 200MA SOT23-3
- Datasheet:
- ZVN4106FTA
Diodes Incorporated ZVN4106FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN4106FTA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance5Ohm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Time@Peak Reflow Temperature-Max (s)40
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max350mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation350mW
- Turn On Delay Time5 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds35pF @ 25V
- Current - Continuous Drain (Id) @ 25°C200mA Ta
- Rise Time7ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time6 ns
- Continuous Drain Current (ID)200mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.2A
- Drain to Source Breakdown Voltage60V
- Feedback Cap-Max (Crss)8 pF
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVN4106FTA Overview
A device's maximal input capacitance is 35pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 200mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 6 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
ZVN4106FTA Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
ZVN4106FTA Applications
There are a lot of Diodes Incorporated
ZVN4106FTA applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 35pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 200mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 6 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
ZVN4106FTA Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
ZVN4106FTA Applications
There are a lot of Diodes Incorporated
ZVN4106FTA applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
ZVN4106FTA More Descriptions
ZVN4106F Series 60 V 5 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-23
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R
MOSFET N-Channel 60V 0.2A SOT23 | Diodes Inc ZVN4106FTA
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R
MOSFET N-Channel 60V 0.2A SOT23 | Diodes Inc ZVN4106FTA
The three parts on the right have similar specifications to ZVN4106FTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Number of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodePin CountJESD-30 CodeQualification StatusTransistor ApplicationDrain-source On Resistance-MaxContact PlatingAdditional FeatureCase ConnectionPulsed Drain Current-Max (IDM)View Compare
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ZVN4106FTA17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR995OhmMatte Tin (Sn)FET General Purpose Powers60VMOSFET (Metal Oxide)DUALGULL WING260200mA4011350mW TaSingleENHANCEMENT MODE350mW5 nsN-Channel2.5 Ω @ 500mA, 10V3V @ 1mA35pF @ 25V200mA Ta7ns5V 10V±20V7 ns6 ns200mA20V0.2A60V8 pF1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free-----------
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-Through HoleThrough HoleE-Line-3-453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3-Obsolete1 (Unlimited)3EAR99-MATTE TIN-240VMOSFET (Metal Oxide)-WIRE260260mA4011750mW TaSingleENHANCEMENT MODE750mW2.5 nsN-Channel5.5 Ω @ 500mA, 10V1.8V @ 1mA200pF @ 25V260mA Ta5ns2.5V 10V±40V5 ns40 ns260mA40V0.26A240V------RoHS CompliantLead Freeunknown3R-PSIP-W3Not QualifiedSWITCHING6Ohm----
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-Through HoleThrough HoleE-Line-3-453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)1997e3-Obsolete1 (Unlimited)3EAR99-MATTE TIN-100VMOSFET (Metal Oxide)-WIRE260900mA4011850mW TaSingleENHANCEMENT MODE850mW8 nsN-Channel500m Ω @ 3A, 10V3V @ 1mA350pF @ 25V900mA Ta25ns5V 10V±20V25 ns30 ns900mA20V0.9A100V------RoHS CompliantLead Freeunknown3R-PSIP-W3Not QualifiedSWITCHING0.65Ohm----
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17 WeeksSurface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR991Ohm-FET General Purpose Powers60VMOSFET (Metal Oxide)DUALGULL WING2601A40112W TaSingleENHANCEMENT MODE2W8 nsN-Channel1 Ω @ 1.5A, 10V3V @ 1mA100pF @ 25V1A Ta12ns5V 10V±20V15 ns12 ns1A20V1A60V-1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-4R-PDSO-G4-SWITCHING-TinFAST SWITCHINGDRAIN8A
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