VN2222LL

ON Semiconductor VN2222LL

Part Number:
VN2222LL
Manufacturer:
ON Semiconductor
Ventron No:
3071162-VN2222LL
Description:
MOSFET N-CH 60V 150MA TO-92
ECAD Model:
Datasheet:
VN2222LL

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Specifications
ON Semiconductor VN2222LL technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor VN2222LL.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Box (TB)
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    240
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    400mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    60pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    150mA Ta
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    0.15A
  • DS Breakdown Voltage-Min
    60V
  • Feedback Cap-Max (Crss)
    5 pF
  • RoHS Status
    Non-RoHS Compliant
Description
VN2222LL Overview
A device's maximum input capacitance is 60pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 0.15A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

VN2222LL Features
a 60V drain to source voltage (Vdss)


VN2222LL Applications
There are a lot of Rochester Electronics, LLC
VN2222LL applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
VN2222LL More Descriptions
Tape & Box (TB) Through Hole N-Channel Single Mosfet Transistor 150mA Ta 150mA 400mW 10ns
Transistor NPN Field Effect VN2222/VN2222LL ON SEMI milliampere=150 V=60 TO92
Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Product Comparison
The three parts on the right have similar specifications to VN2222LL.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    RoHS Status
    Factory Lead Time
    Contact Plating
    Mount
    Number of Pins
    Weight
    Published
    ECCN Code
    Number of Channels
    Element Configuration
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Height
    Length
    Width
    Lead Free
    Power Dissipation
    Turn On Delay Time
    Turn-Off Delay Time
    Drain to Source Breakdown Voltage
    Radiation Hardening
    View Compare
  • VN2222LL
    VN2222LL
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    NO
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    TIN LEAD
    MOSFET (Metal Oxide)
    BOTTOM
    240
    30
    3
    O-PBCY-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    400mW Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    7.5 Ω @ 500mA, 10V
    2.5V @ 1mA
    60pF @ 25V
    150mA Ta
    60V
    10V
    ±20V
    0.15A
    60V
    5 pF
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • VN2222LLRLRA
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    NO
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    TIN LEAD
    MOSFET (Metal Oxide)
    BOTTOM
    240
    30
    3
    O-PBCY-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    400mW Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    7.5 Ω @ 500mA, 10V
    2.5V @ 1mA
    60pF @ 25V
    150mA Ta
    60V
    10V
    ±20V
    0.15A
    60V
    5 pF
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • VN2222LL-G-P003
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    Active
    1 (Unlimited)
    3
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    -
    -
    -
    -
    1
    -
    400mW Ta 1W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    7.5 Ω @ 500mA, 10V
    2.5V @ 1mA
    60pF @ 25V
    230mA Tj
    60V
    5V 10V
    ±30V
    -
    60V
    8 pF
    ROHS3 Compliant
    6 Weeks
    Tin
    Through Hole
    3
    453.59237mg
    2013
    EAR99
    1
    Single
    230mA
    30V
    5.33mm
    5.21mm
    4.19mm
    Lead Free
    -
    -
    -
    -
    -
  • VN2224N3-G
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    -
    SILICON
    -55°C~150°C TJ
    Bulk
    e3
    -
    Active
    1 (Unlimited)
    3
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    BOTTOM
    -
    -
    -
    -
    -
    1
    -
    1W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    1.25 Ω @ 2A, 10V
    3V @ 5mA
    350pF @ 25V
    540mA Tj
    -
    5V 10V
    ±20V
    0.54A
    -
    -
    ROHS3 Compliant
    20 Weeks
    -
    Through Hole
    3
    453.59237mg
    2013
    EAR99
    1
    Single
    540mA
    20V
    -
    -
    -
    Lead Free
    1W
    6 ns
    65 ns
    240V
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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