ON Semiconductor VN2222LL
- Part Number:
- VN2222LL
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3071162-VN2222LL
- Description:
- MOSFET N-CH 60V 150MA TO-92
- Datasheet:
- VN2222LL
ON Semiconductor VN2222LL technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor VN2222LL.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max400mW Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
- Current - Continuous Drain (Id) @ 25°C150mA Ta
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)0.15A
- DS Breakdown Voltage-Min60V
- Feedback Cap-Max (Crss)5 pF
- RoHS StatusNon-RoHS Compliant
VN2222LL Overview
A device's maximum input capacitance is 60pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 0.15A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
VN2222LL Features
a 60V drain to source voltage (Vdss)
VN2222LL Applications
There are a lot of Rochester Electronics, LLC
VN2222LL applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 60pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 0.15A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
VN2222LL Features
a 60V drain to source voltage (Vdss)
VN2222LL Applications
There are a lot of Rochester Electronics, LLC
VN2222LL applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
VN2222LL More Descriptions
Tape & Box (TB) Through Hole N-Channel Single Mosfet Transistor 150mA Ta 150mA 400mW 10ns
Transistor NPN Field Effect VN2222/VN2222LL ON SEMI milliampere=150 V=60 TO92
Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Transistor NPN Field Effect VN2222/VN2222LL ON SEMI milliampere=150 V=60 TO92
Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
The three parts on the right have similar specifications to VN2222LL.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinFeedback Cap-Max (Crss)RoHS StatusFactory Lead TimeContact PlatingMountNumber of PinsWeightPublishedECCN CodeNumber of ChannelsElement ConfigurationContinuous Drain Current (ID)Gate to Source Voltage (Vgs)HeightLengthWidthLead FreePower DissipationTurn On Delay TimeTurn-Off Delay TimeDrain to Source Breakdown VoltageRadiation HardeningView Compare
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VN2222LLThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)e0noObsolete1 (Unlimited)3TIN LEADMOSFET (Metal Oxide)BOTTOM240303O-PBCY-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE400mW TaENHANCEMENT MODEN-ChannelSWITCHING7.5 Ω @ 500mA, 10V2.5V @ 1mA60pF @ 25V150mA Ta60V10V±20V0.15A60V5 pFNon-RoHS Compliant---------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Reel (TR)e0noObsolete1 (Unlimited)3TIN LEADMOSFET (Metal Oxide)BOTTOM240303O-PBCY-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE400mW TaENHANCEMENT MODEN-ChannelSWITCHING7.5 Ω @ 500mA, 10V2.5V @ 1mA60pF @ 25V150mA Ta60V10V±20V0.15A60V5 pFNon-RoHS Compliant--------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON-55°C~150°C TJTape & Reel (TR)--Active1 (Unlimited)3-MOSFET (Metal Oxide)BOTTOM-----1-400mW Ta 1W TcENHANCEMENT MODEN-ChannelSWITCHING7.5 Ω @ 500mA, 10V2.5V @ 1mA60pF @ 25V230mA Tj60V5V 10V±30V-60V8 pFROHS3 Compliant6 WeeksTinThrough Hole3453.59237mg2013EAR991Single230mA30V5.33mm5.21mm4.19mmLead Free-----
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Through HoleTO-226-3, TO-92-3 (TO-226AA)-SILICON-55°C~150°C TJBulke3-Active1 (Unlimited)3Matte Tin (Sn)MOSFET (Metal Oxide)BOTTOM-----1-1W TcENHANCEMENT MODEN-ChannelSWITCHING1.25 Ω @ 2A, 10V3V @ 5mA350pF @ 25V540mA Tj-5V 10V±20V0.54A--ROHS3 Compliant20 Weeks-Through Hole3453.59237mg2013EAR991Single540mA20V---Lead Free1W6 ns65 ns240VNo
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