Vishay Siliconix TN0201K-T1-E3

TN0201K-T1-E3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 420mA amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.A device can conduct a maximum continuous current of [0.42A] according to its drain current.It is [9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

TN0201K-T1-E3 Features
a continuous drain current (ID) of 420mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 9 ns
a threshold voltage of 2V


TN0201K-T1-E3 Applications
There are a lot of Vishay Siliconix
TN0201K-T1-E3 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies