Microchip Technology TN0110N3-G

Name: TN0110N3-G
Brand: Microchip Technology
SKU: 2479662-TN0110N3-G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TN0110N3-G

Manufacturer:: Microchip Technology

Ventron No:: 2479662-TN0110N3-G

Description:: MOSFET N-CH 100V 350MA TO92-3

ECAD Model:

Datasheet:: TN0110N3-G

Specifications

Microchip Technology TN0110N3-G technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology TN0110N3-G.

Factory Lead Time
6 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1W
Turn On Delay Time
2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
2V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds
60pF @ 25V
Current - Continuous Drain (Id) @ 25°C
350mA Tj
Rise Time
3ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
3 ns
Turn-Off Delay Time
6 ns
Continuous Drain Current (ID)
350mA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
3Ohm
Drain to Source Breakdown Voltage
100V
Feedback Cap-Max (Crss)
8 pF
Height
5.33mm
Length
5.21mm
Width
4.19mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

TN0110N3-G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 60pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 350mA.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 6 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 2 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

TN0110N3-G Features
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 6 ns

TN0110N3-G Applications
There are a lot of Microchip Technology
TN0110N3-G applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

TN0110N3-G More Descriptions

TN0110 Series 100 V 3 Ohm N-Channel Enhancement-Mode Vertical DMOS FET - TO-92
Trans MOSFET N-CH Si 100V 0.35A 3-Pin TO-92 Bag
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 3.0 Ohm3 TO-92 BAG | Microchip Technology Inc. TN0110N3-G
100V 350mA 4.5´Î@4.5V250mA 1W 2V@500Ã×A N Channel TO-92(TO-92-3) MOSFETs ROHS
Small Signal Field-Effect Transistor, 0.35A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Mosfet, 100V, 0.35A, 150Deg C, 1W; Transistor Polarity:N Channel; Continuous Drain Current Id:350Ma; Drain Source Voltage Vds:100V; On Resistance Rds(On):1.6Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes |Microchip TN0110N3-G

Product Comparison

The three parts on the right have similar specifications to TN0110N3-G.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Feedback Cap-Max (Crss)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

View Compare
TN0110N3-G

Microchip Technology

6 Weeks

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

453.59237mg

SILICON

-55°C~150°C TJ

Bulk

2011

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

MOSFET (Metal Oxide)

BOTTOM

1

1

1W Tc

Single

ENHANCEMENT MODE

1W

2 ns

N-Channel

SWITCHING

3 Ω @ 500mA, 10V

2V @ 500μA

60pF @ 25V

350mA Tj

3ns

4.5V 10V

±20V

3 ns

6 ns

350mA

20V

3Ohm

100V

8 pF

5.33mm

5.21mm

4.19mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
TN0106N3-G-P003

Microchip Technology

6 Weeks

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

453.59237mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2013

-

Active

1 (Unlimited)

3

EAR99

-

-

-

MOSFET (Metal Oxide)

BOTTOM

1

1

1W Tc

Single

ENHANCEMENT MODE

1W

2 ns

N-Channel

SWITCHING

3 Ω @ 500mA, 10V

2V @ 500μA

60pF @ 25V

350mA Tj

3ns

4.5V 10V

±20V

3 ns

6 ns

350mA

2V

3Ohm

60V

8 pF

-

-

-

-

ROHS3 Compliant

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

TN0110N3-G vs TN0106N3-G-P003
TN0104N3-G-P003

Microchip Technology

9 Weeks

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

453.59237mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2013

-

Active

1 (Unlimited)

3

EAR99

-

-

-

MOSFET (Metal Oxide)

BOTTOM

1

1

1W Tc

Single

ENHANCEMENT MODE

-

3 ns

N-Channel

SWITCHING

1.8 Ω @ 1A, 10V

1.6V @ 500μA

70pF @ 20V

450mA Ta

7ns

3V 10V

±20V

5 ns

6 ns

450mA

20V

-

-

-

5.33mm

5.21mm

4.19mm

-

ROHS3 Compliant

-

-

-

O-PBCY-T3

40V

0.45A

40V

TN0110N3-G vs TN0104N3-G-P003
TN0104N3-G

Microchip Technology

9 Weeks

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

219.992299mg

SILICON

-55°C~150°C TJ

Bulk

2013

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

LOW THRESHOLD

FET General Purpose Power

MOSFET (Metal Oxide)

BOTTOM

1

1

1W Tc

Single

ENHANCEMENT MODE

1W

3 ns

N-Channel

SWITCHING

1.8 Ω @ 1A, 10V

1.6V @ 500μA

70pF @ 20V

450mA Ta

7ns

3V 10V

±20V

5 ns

6 ns

450mA

20V

-

40V

-

5.33mm

5.21mm

4.19mm

No

ROHS3 Compliant

-

-

-

-

-

0.45A

-

TN0110N3-G vs TN0104N3-G