Vishay Siliconix SUM50P10-42-E3
- Part Number:
- SUM50P10-42-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3586850-SUM50P10-42-E3
- Description:
- MOSFET P-CH 100V 36A D2PAK
- Datasheet:
- SUM50P10-42-E3
Vishay Siliconix SUM50P10-42-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUM50P10-42-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Reach Compliance Codeunknown
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max18.8W Ta 125W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation18.8W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.2m Ω @ 14A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4600pF @ 50V
- Current - Continuous Drain (Id) @ 25°C36A Tc
- Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Polarity/Channel TypeP-CHANNEL
- Continuous Drain Current (ID)36A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.042Ohm
- Pulsed Drain Current-Max (IDM)40A
- Avalanche Energy Rating (Eas)80 mJ
- RoHS StatusROHS3 Compliant
SUM50P10-42-E3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 80 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4600pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 40A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SUM50P10-42-E3 Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 36A
based on its rated peak drain current 40A.
a 100V drain to source voltage (Vdss)
SUM50P10-42-E3 Applications
There are a lot of Vishay Siliconix
SUM50P10-42-E3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 80 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4600pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 40A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SUM50P10-42-E3 Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 36A
based on its rated peak drain current 40A.
a 100V drain to source voltage (Vdss)
SUM50P10-42-E3 Applications
There are a lot of Vishay Siliconix
SUM50P10-42-E3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SUM50P10-42-E3 More Descriptions
Trans MOSFET P-CH 100V 36A 3-Pin(2 Tab) TO-263
MOSFET P-CH 100V 36A D2PAK
Power Field-Effect Transistor, 36A I(D), 100V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
P-CHANNEL 100-V (D-S) MOSFET
MOSFET N-CH 100V 36A TO263
MOSFET P-CH 100V 36A D2PAK
Power Field-Effect Transistor, 36A I(D), 100V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
P-CHANNEL 100-V (D-S) MOSFET
MOSFET N-CH 100V 36A TO263
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