Vishay Siliconix SUM09N20-270-E3
- Part Number:
- SUM09N20-270-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2490269-SUM09N20-270-E3
- Description:
- MOSFET N-CH 200V 9A D2PAK
- Datasheet:
- SUM09N20-270-E3
Vishay Siliconix SUM09N20-270-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUM09N20-270-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance270mOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max3.75W Ta 60W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.75W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs270m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds580pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9A Tc
- Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
- Rise Time35ns
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)40 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)9A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)9A
- Drain to Source Breakdown Voltage200V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SUM09N20-270-E3 Overview
The maximum input capacitance of this device is 580pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.As shown in the table below, the drain current of this device is 9A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (6V 10V), this device helps reduce its power consumption.
SUM09N20-270-E3 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 25 ns
SUM09N20-270-E3 Applications
There are a lot of Vishay Siliconix
SUM09N20-270-E3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 580pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.As shown in the table below, the drain current of this device is 9A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (6V 10V), this device helps reduce its power consumption.
SUM09N20-270-E3 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 25 ns
SUM09N20-270-E3 Applications
There are a lot of Vishay Siliconix
SUM09N20-270-E3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SUM09N20-270-E3 More Descriptions
MOSFET N-CH 200V 9A D2PAK
N-CHANNEL 200-V (D-S) 175 DEG.C MOSFET
TRANS MOSFET N-CH 200V 9A 3PIN TO-263
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:9000mA; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):0.3ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:4V; Power Dissipation, Pd:3.75W ;RoHS Compliant: Yes
N-CHANNEL 200-V (D-S) 175 DEG.C MOSFET
TRANS MOSFET N-CH 200V 9A 3PIN TO-263
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:9000mA; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):0.3ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:4V; Power Dissipation, Pd:3.75W ;RoHS Compliant: Yes
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