SUM09N20-270-E3

Vishay Siliconix SUM09N20-270-E3

Part Number:
SUM09N20-270-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2490269-SUM09N20-270-E3
Description:
MOSFET N-CH 200V 9A D2PAK
ECAD Model:
Datasheet:
SUM09N20-270-E3

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Specifications
Vishay Siliconix SUM09N20-270-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUM09N20-270-E3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    270mOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    3.75W Ta 60W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.75W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    270m Ω @ 5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    580pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • Rise Time
    35ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    40 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    9A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain to Source Breakdown Voltage
    200V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SUM09N20-270-E3 Overview
The maximum input capacitance of this device is 580pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.As shown in the table below, the drain current of this device is 9A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (6V 10V), this device helps reduce its power consumption.

SUM09N20-270-E3 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 25 ns


SUM09N20-270-E3 Applications
There are a lot of Vishay Siliconix
SUM09N20-270-E3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SUM09N20-270-E3 More Descriptions
MOSFET N-CH 200V 9A D2PAK
N-CHANNEL 200-V (D-S) 175 DEG.C MOSFET
TRANS MOSFET N-CH 200V 9A 3PIN TO-263
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:9000mA; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):0.3ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:4V; Power Dissipation, Pd:3.75W ;RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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