Vishay Siliconix SUD50P10-43L-E3
- Part Number:
- SUD50P10-43L-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478275-SUD50P10-43L-E3
- Description:
- MOSFET P-CH 100V 37.1A TO252
- Datasheet:
- SUD50P10-43L-E3
Vishay Siliconix SUD50P10-43L-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUD50P10-43L-E3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight1.437803g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance43mOhm
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max8.3W Ta 136W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation8.3W
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs43m Ω @ 9.2A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4600pF @ 50V
- Current - Continuous Drain (Id) @ 25°C37.1A Tc
- Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
- Rise Time160ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)100 ns
- Turn-Off Delay Time110 ns
- Continuous Drain Current (ID)-9.2A
- Threshold Voltage-3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-100V
- Pulsed Drain Current-Max (IDM)40A
- Max Junction Temperature (Tj)175°C
- Height2.507mm
- Length6.73mm
- Width6.22mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SUD50P10-43L-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4600pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -9.2A amps.In this device, the drain-source breakdown voltage is -100V and VGS=-100V, so the drain-source breakdown voltage is -100V in this case.It is [110 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 40A.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -3V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SUD50P10-43L-E3 Features
a continuous drain current (ID) of -9.2A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 40A.
a threshold voltage of -3V
a 100V drain to source voltage (Vdss)
SUD50P10-43L-E3 Applications
There are a lot of Vishay Siliconix
SUD50P10-43L-E3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4600pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -9.2A amps.In this device, the drain-source breakdown voltage is -100V and VGS=-100V, so the drain-source breakdown voltage is -100V in this case.It is [110 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 40A.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -3V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SUD50P10-43L-E3 Features
a continuous drain current (ID) of -9.2A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 40A.
a threshold voltage of -3V
a 100V drain to source voltage (Vdss)
SUD50P10-43L-E3 Applications
There are a lot of Vishay Siliconix
SUD50P10-43L-E3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SUD50P10-43L-E3 More Descriptions
Single P-Channel 100 V 0.043 Ohm Surface Mount Power MosFet - TO-252-3
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P CH, -100V, -38A, TO-252AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-38A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:136W; Operating Temperature Min:-50°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:-
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P CH, -100V, -38A, TO-252AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-38A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:136W; Operating Temperature Min:-50°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:-
The three parts on the right have similar specifications to SUD50P10-43L-E3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal FormPin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Max Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxTerminal FinishDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Peak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
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SUD50P10-43L-E314 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6331.437803gSILICON-55°C~175°C TJTape & Reel (TR)TrenchFET®2013e3yesActive1 (Unlimited)2EAR9943mOhmOther TransistorsMOSFET (Metal Oxide)GULL WING4R-PSSO-G2118.3W Ta 136W TcSingleENHANCEMENT MODE8.3WDRAIN15 nsP-ChannelSWITCHING43m Ω @ 9.2A, 10V3V @ 250μA4600pF @ 50V37.1A Tc160nC @ 10V160ns100V4.5V 10V±20V100 ns110 ns-9.2A-3V20V-100V40A175°C2.507mm6.73mm6.22mmUnknownNoROHS3 CompliantLead Free-------------
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--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633---55°C~175°C TJTape & Reel (TR)TrenchFET®2014--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---1-6.5W Ta 46.8W TcSingle-46.8mW-9 nsN-Channel-12mOhm @ 20A, 10V3V @ 250μA1600pF @ 25V-42nC @ 10V15ns30V4.5V 10V±20V12 ns20 ns17.5A3V20V------No SVHCNoROHS3 Compliant-TO-252, (D-Pak)175°C-55°C1.6nF12mOhm12 mΩ------
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--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-SILICON-55°C~175°C TJTape & Reel (TR)TrenchFET®2009e3yesObsolete1 (Unlimited)2EAR99--MOSFET (Metal Oxide)GULL WING4R-PSSO-G21-3.1W Ta 45.4W TcSingleENHANCEMENT MODE3.1WDRAIN22 nsP-ChannelAMPLIFIER23m Ω @ 15A, 10V2V @ 250μA1880pF @ 20V8.2A Ta 20A Tc65nC @ 10V12ns40V4.5V 10V±16V9 ns36 ns8.2A-16V-50A-----NoROHS3 Compliant-------MATTE TIN OVER NICKEL20A40V20 mJ--
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--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6331.437803gSILICON-55°C~175°C TJTape & Reel (TR)TrenchFET®-e3yesObsolete1 (Unlimited)2EAR999.5MOhmFET General Purpose PowerMOSFET (Metal Oxide)GULL WING4R-PSSO-G2117.5W Ta 65.2W TcSingleENHANCEMENT MODE7.5WDRAIN9 nsN-ChannelSWITCHING9.5m Ω @ 20A, 10V3V @ 250μA2200pF @ 25V63A Tc16nC @ 4.5V15ns-4.5V 10V±20V8 ns22 ns63A-20V30V50A-2.39mm6.73mm6.22mm-NoROHS3 CompliantLead Free------Matte Tin (Sn)50A--26030
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