SUD50P10-43L-E3

Vishay Siliconix SUD50P10-43L-E3

Part Number:
SUD50P10-43L-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2478275-SUD50P10-43L-E3
Description:
MOSFET P-CH 100V 37.1A TO252
ECAD Model:
Datasheet:
SUD50P10-43L-E3

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Specifications
Vishay Siliconix SUD50P10-43L-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUD50P10-43L-E3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    1.437803g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    43mOhm
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    8.3W Ta 136W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    8.3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    43m Ω @ 9.2A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4600pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    37.1A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    160nC @ 10V
  • Rise Time
    160ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    100 ns
  • Turn-Off Delay Time
    110 ns
  • Continuous Drain Current (ID)
    -9.2A
  • Threshold Voltage
    -3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -100V
  • Pulsed Drain Current-Max (IDM)
    40A
  • Max Junction Temperature (Tj)
    175°C
  • Height
    2.507mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SUD50P10-43L-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4600pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -9.2A amps.In this device, the drain-source breakdown voltage is -100V and VGS=-100V, so the drain-source breakdown voltage is -100V in this case.It is [110 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 40A.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -3V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SUD50P10-43L-E3 Features
a continuous drain current (ID) of -9.2A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 40A.
a threshold voltage of -3V
a 100V drain to source voltage (Vdss)


SUD50P10-43L-E3 Applications
There are a lot of Vishay Siliconix
SUD50P10-43L-E3 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SUD50P10-43L-E3 More Descriptions
Single P-Channel 100 V 0.043 Ohm Surface Mount Power MosFet - TO-252-3
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P CH, -100V, -38A, TO-252AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-38A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:136W; Operating Temperature Min:-50°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:-
Product Comparison
The three parts on the right have similar specifications to SUD50P10-43L-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Terminal Finish
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    View Compare
  • SUD50P10-43L-E3
    SUD50P10-43L-E3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    1.437803g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    43mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    GULL WING
    4
    R-PSSO-G2
    1
    1
    8.3W Ta 136W Tc
    Single
    ENHANCEMENT MODE
    8.3W
    DRAIN
    15 ns
    P-Channel
    SWITCHING
    43m Ω @ 9.2A, 10V
    3V @ 250μA
    4600pF @ 50V
    37.1A Tc
    160nC @ 10V
    160ns
    100V
    4.5V 10V
    ±20V
    100 ns
    110 ns
    -9.2A
    -3V
    20V
    -100V
    40A
    175°C
    2.507mm
    6.73mm
    6.22mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SUD50N03-12P-E3
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2014
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    -
    6.5W Ta 46.8W Tc
    Single
    -
    46.8mW
    -
    9 ns
    N-Channel
    -
    12mOhm @ 20A, 10V
    3V @ 250μA
    1600pF @ 25V
    -
    42nC @ 10V
    15ns
    30V
    4.5V 10V
    ±20V
    12 ns
    20 ns
    17.5A
    3V
    20V
    -
    -
    -
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    -
    TO-252, (D-Pak)
    175°C
    -55°C
    1.6nF
    12mOhm
    12 mΩ
    -
    -
    -
    -
    -
    -
  • SUD50P04-23-E3
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    4
    R-PSSO-G2
    1
    -
    3.1W Ta 45.4W Tc
    Single
    ENHANCEMENT MODE
    3.1W
    DRAIN
    22 ns
    P-Channel
    AMPLIFIER
    23m Ω @ 15A, 10V
    2V @ 250μA
    1880pF @ 20V
    8.2A Ta 20A Tc
    65nC @ 10V
    12ns
    40V
    4.5V 10V
    ±16V
    9 ns
    36 ns
    8.2A
    -
    16V
    -
    50A
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    MATTE TIN OVER NICKEL
    20A
    40V
    20 mJ
    -
    -
  • SUD50N03-09P-E3
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    1.437803g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    9.5MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    4
    R-PSSO-G2
    1
    1
    7.5W Ta 65.2W Tc
    Single
    ENHANCEMENT MODE
    7.5W
    DRAIN
    9 ns
    N-Channel
    SWITCHING
    9.5m Ω @ 20A, 10V
    3V @ 250μA
    2200pF @ 25V
    63A Tc
    16nC @ 4.5V
    15ns
    -
    4.5V 10V
    ±20V
    8 ns
    22 ns
    63A
    -
    20V
    30V
    50A
    -
    2.39mm
    6.73mm
    6.22mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    Matte Tin (Sn)
    50A
    -
    -
    260
    30
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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