Vishay Siliconix SUD50N04-8M8P-4GE3

Name: SUD50N04-8M8P-4GE3
Brand: Vishay Siliconix
SKU: 2478295-SUD50N04-8M8P-4GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SUD50N04-8M8P-4GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478295-SUD50N04-8M8P-4GE3

Description:: MOSFET N-CH 40V 14A TO-252

ECAD Model:

Datasheet:: SUD50N04-8M8P-4GE3

Specifications

Vishay Siliconix SUD50N04-8M8P-4GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUD50N04-8M8P-4GE3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
8.8mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.1W Ta 48.1W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
48.1W
Case Connection
DRAIN
Turn On Delay Time
30 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2400pF @ 20V
Current - Continuous Drain (Id) @ 25°C
14A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs
56nC @ 10V
Rise Time
15ns
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
14A
Threshold Voltage
1.5V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
50A
DS Breakdown Voltage-Min
40V
Avalanche Energy Rating (Eas)
45 mJ
Height
2.39mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SUD50N04-8M8P-4GE3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.The maximum input capacitance of this device is 2400pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.As shown in the table below, the drain current of this device is 50A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 45 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 30 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SUD50N04-8M8P-4GE3 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 14A
the turn-off delay time is 45 ns
a threshold voltage of 1.5V
a 40V drain to source voltage (Vdss)

SUD50N04-8M8P-4GE3 Applications
There are a lot of Vishay Siliconix
SUD50N04-8M8P-4GE3 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

SUD50N04-8M8P-4GE3 More Descriptions

Single N-Channel 40 V 0.0088 Ohm 48.1 W Surface Mount Power Mosfet - TO-252-3
Power Field-Effect Transistor, 14A I(D), 40V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Mosfet, N-Ch, 40V, 50A, To-252Aa-3; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SUD50N04-8M8P-4GE3.
MOSFET, N CH, 40V, 50A, TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:48.1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:48.1W; Voltage Vgs Max:20V

Product Comparison

The three parts on the right have similar specifications to SUD50N04-8M8P-4GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Drain-source On Resistance-Max

View Compare
SUD50N04-8M8P-4GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

e3

yes

Active

1 (Unlimited)

2

EAR99

8.8mOhm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

4

R-PSSO-G2

1

1

3.1W Ta 48.1W Tc

Single

ENHANCEMENT MODE

48.1W

DRAIN

30 ns

N-Channel

SWITCHING

8.8m Ω @ 20A, 10V

3V @ 250μA

2400pF @ 20V

14A Ta 50A Tc

56nC @ 10V

15ns

40V

4.5V 10V

±20V

15 ns

45 ns

14A

1.5V

20V

50A

40V

45 mJ

2.39mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-
SUD50N06-07L-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

2

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

TrenchFET®

2009

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn) - with Nickel (Ni) barrier

FET General Purpose Powers

MOSFET (Metal Oxide)

GULL WING

260

30

4

-

1

-

136W Tc

Single

ENHANCEMENT MODE

136W

DRAIN

15 ns

N-Channel

SWITCHING

7.4m Ω @ 20A, 10V

3V @ 250μA

5800pF @ 25V

96A Tc

144nC @ 10V

13ns

-

4.5V 10V

±20V

14 ns

62 ns

96A

-

20V

50A

-

-

-

-

-

-

No

ROHS3 Compliant

-

60V

-

-

SUD50N04-8M8P-4GE3 vs SUD50N06-07L-E3
SUD50P04-23-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

TrenchFET®

2009

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

-

MATTE TIN OVER NICKEL

-

MOSFET (Metal Oxide)

GULL WING

-

-

4

R-PSSO-G2

1

-

3.1W Ta 45.4W Tc

Single

ENHANCEMENT MODE

3.1W

DRAIN

22 ns

P-Channel

AMPLIFIER

23m Ω @ 15A, 10V

2V @ 250μA

1880pF @ 20V

8.2A Ta 20A Tc

65nC @ 10V

12ns

40V

4.5V 10V

±16V

9 ns

36 ns

8.2A

-

16V

20A

40V

20 mJ

-

-

-

-

No

ROHS3 Compliant

-

-

50A

-

SUD50N04-8M8P-4GE3 vs SUD50P04-23-E3
SUD50N02-04P-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

2

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn) - with Nickel (Ni) barrier

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

-

-

4

-

1

-

8.3W Ta 136W Tc

Single

ENHANCEMENT MODE

8.3W

DRAIN

20 ns

N-Channel

SWITCHING

4.3m Ω @ 20A, 10V

3V @ 250μA

5000pF @ 10V

50A Tc

60nC @ 4.5V

20ns

-

4.5V 10V

±20V

15 ns

50 ns

34A

-

20V

-

-

-

-

-

-

-

No

ROHS3 Compliant

-

20V

100A

0.006Ohm

SUD50N04-8M8P-4GE3 vs SUD50N02-04P-E3