STMicroelectronics STW9NK90Z
- Part Number:
- STW9NK90Z
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3586256-STW9NK90Z
- Description:
- MOSFET N-CH 900V 8A TO-247
- Datasheet:
- STW9NK90Z
STMicroelectronics STW9NK90Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW9NK90Z.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight9.071847g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1.3Ohm
- Terminal FinishTin (Sn)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC900V
- TechnologyMOSFET (Metal Oxide)
- Current Rating8A
- Base Part NumberSTW9N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max160W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation160W
- Turn On Delay Time22 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.3 Ω @ 3.6A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds2115pF @ 25V
- Current - Continuous Drain (Id) @ 25°C8A Tc
- Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
- Rise Time13ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)28 ns
- Turn-Off Delay Time55 ns
- Continuous Drain Current (ID)8A
- JEDEC-95 CodeTO-247AC
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)8A
- Drain to Source Breakdown Voltage900V
- Avalanche Energy Rating (Eas)220 mJ
- Height20.15mm
- Length15.75mm
- Width5.15mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STW9NK90Z Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 220 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2115pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 8A.With a drain-source breakdown voltage of 900V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 900V.8A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 22 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STW9NK90Z Features
the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 55 ns
STW9NK90Z Applications
There are a lot of STMicroelectronics
STW9NK90Z applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 220 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2115pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 8A.With a drain-source breakdown voltage of 900V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 900V.8A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 22 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STW9NK90Z Features
the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 55 ns
STW9NK90Z Applications
There are a lot of STMicroelectronics
STW9NK90Z applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
STW9NK90Z More Descriptions
N-Channel 900 V 1.3 Ohm Flange Mount SuperMESH Power Mosfet - TO-247
N-CHANNEL 900V - 1.1 OHM - 8A TO-247 ZENER PROTECTED SUPERMESH MOSFET
Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation P
The SuperMESH(TM) series is obtained through an extreme optimization of ST's well established strip-based PowerMESH(TM) layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
N-CHANNEL 900V - 1.1 OHM - 8A TO-247 ZENER PROTECTED SUPERMESH MOSFET
Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation P
The SuperMESH(TM) series is obtained through an extreme optimization of ST's well established strip-based PowerMESH(TM) layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
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