STW9NK90Z

STMicroelectronics STW9NK90Z

Part Number:
STW9NK90Z
Manufacturer:
STMicroelectronics
Ventron No:
3586256-STW9NK90Z
Description:
MOSFET N-CH 900V 8A TO-247
ECAD Model:
Datasheet:
STW9NK90Z

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Specifications
STMicroelectronics STW9NK90Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW9NK90Z.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    9.071847g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    1.3Ohm
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    900V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    8A
  • Base Part Number
    STW9N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    160W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    160W
  • Turn On Delay Time
    22 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.3 Ω @ 3.6A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2115pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    72nC @ 10V
  • Rise Time
    13ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    28 ns
  • Turn-Off Delay Time
    55 ns
  • Continuous Drain Current (ID)
    8A
  • JEDEC-95 Code
    TO-247AC
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    8A
  • Drain to Source Breakdown Voltage
    900V
  • Avalanche Energy Rating (Eas)
    220 mJ
  • Height
    20.15mm
  • Length
    15.75mm
  • Width
    5.15mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STW9NK90Z Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 220 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2115pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 8A.With a drain-source breakdown voltage of 900V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 900V.8A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 22 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

STW9NK90Z Features
the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 55 ns


STW9NK90Z Applications
There are a lot of STMicroelectronics
STW9NK90Z applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
STW9NK90Z More Descriptions
N-Channel 900 V 1.3 Ohm Flange Mount SuperMESH Power Mosfet - TO-247
N-CHANNEL 900V - 1.1 OHM - 8A TO-247 ZENER PROTECTED SUPERMESH MOSFET
Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation P
The SuperMESH(TM) series is obtained through an extreme optimization of ST's well established strip-based PowerMESH(TM) layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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