STMicroelectronics STW55NM60ND

Name: STW55NM60ND
Brand: STMicroelectronics
SKU: 2478489-STW55NM60ND
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW55NM60ND

Manufacturer:: STMicroelectronics

Ventron No:: 2478489-STW55NM60ND

Description:: MOSFET N-CH 600V 51A TO-247

ECAD Model:

Datasheet:: STW55NM60ND

Specifications

STMicroelectronics STW55NM60ND technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW55NM60ND.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
FDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
60MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STW55N
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
350W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350W
Turn On Delay Time
33 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 25.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5800pF @ 50V
Current - Continuous Drain (Id) @ 25°C
51A Tc
Gate Charge (Qg) (Max) @ Vgs
190nC @ 10V
Rise Time
68ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
96 ns
Turn-Off Delay Time
188 ns
Continuous Drain Current (ID)
51A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
204A
Avalanche Energy Rating (Eas)
850 mJ
Max Junction Temperature (Tj)
150°C
Height
24.45mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW55NM60ND Description
The STW55NM60ND is an FDmesh? N-channel Power MOSFET featuring low input capacitance and gate charge. This FDmesh? II Power MOSFET STW55NM60ND with intrinsic fast-recovery body diode is produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

STW55NM60ND Features
The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
High dv/dt and avalanche capabilities

STW55NM60ND Applications
Industrial
Power Management
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

STW55NM60ND More Descriptions

Mosfet Transistor, N Channel, 51 A, 600 V, 0.047 Ohm, 10 V, 4 V Rohs Compliant: Yes
N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
N-Channel 600 V 60 mOhm Flange Mount FDmesh II Power Mosfet - TO-247
Trans MOSFET N-CH 600V 51A Automotive 3-Pin(3 Tab) TO-247 Tube
Power Field-Effect Transistor, 51A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N CH, 600V, 51A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 51A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe

Product Comparison

The three parts on the right have similar specifications to STW55NM60ND.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

JESD-30 Code

Qualification Status

Lifecycle Status

Voltage - Rated DC

Current Rating

Factory Lead Time

View Compare
STW55NM60ND

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

FDmesh™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

60MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STW55N

3

1

1

350W Tc

Single

ENHANCEMENT MODE

350W

33 ns

N-Channel

SWITCHING

60m Ω @ 25.5A, 10V

5V @ 250μA

5800pF @ 50V

51A Tc

190nC @ 10V

68ns

10V

±25V

96 ns

188 ns

51A

4V

TO-247AC

25V

600V

204A

850 mJ

150°C

24.45mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
STW55NM50N

STMicroelectronics

Through Hole

Through Hole

TO-247-3

-

SILICON

150°C TJ

Tube

MDmesh™ II

-

Obsolete

1 (Unlimited)

3

EAR99

54mOhm

-

FET General Purpose Power

MOSFET (Metal Oxide)

STW55N

3

1

-

350W Tc

Single

ENHANCEMENT MODE

350W

-

N-Channel

SWITCHING

54m Ω @ 27A, 10V

4V @ 250μA

5800pF @ 50V

54A Tc

180nC @ 10V

40ns

10V

±25V

70 ns

250 ns

54A

-

TO-247AC

25V

500V

-

850 mJ

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

unknown

R-PSFM-T3

Not Qualified

-

-

-

-

STW55NM60ND vs STW55NM50N
STW52NK25Z

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Not For New Designs

1 (Unlimited)

3

EAR99

45mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STW52N

3

1

-

300W Tc

Single

ENHANCEMENT MODE

300W

40 ns

N-Channel

SWITCHING

45m Ω @ 26A, 10V

4.5V @ 150μA

4850pF @ 25V

52A Tc

160nC @ 10V

75ns

10V

±30V

55 ns

115 ns

26A

3.75V

-

30V

250V

208A

500 mJ

-

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

NRND (Last Updated: 8 months ago)

250V

52A

-

STW55NM60ND vs STW52NK25Z
STW54NM65ND

STMicroelectronics

Through Hole

Through Hole

TO-247-3

-

SILICON

150°C TJ

Tube

FDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

65MOhm

Tin (Sn)

-

MOSFET (Metal Oxide)

STW54N

3

1

-

350W Tc

Single

ENHANCEMENT MODE

350W

-

N-Channel

SWITCHING

65m Ω @ 24.5A, 10V

5V @ 250μA

6200pF @ 50V

49A Tc

188nC @ 10V

59ns

10V

±25V

98 ns

152 ns

49A

-

-

25V

650V

-

850 mJ

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

R-PSFM-T3

-

-

-

-

42 Weeks

STW55NM60ND vs STW54NM65ND