STMicroelectronics STW52NK25Z

Name: STW52NK25Z
Brand: STMicroelectronics
SKU: 2485659-STW52NK25Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW52NK25Z

Manufacturer:: STMicroelectronics

Ventron No:: 2485659-STW52NK25Z

Description:: MOSFET N-CH 250V 52A TO-247

ECAD Model:

Datasheet:: STW52NK25Z

Specifications

STMicroelectronics STW52NK25Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW52NK25Z.

Lifecycle Status
NRND (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
45mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
250V
Technology
MOSFET (Metal Oxide)
Current Rating
52A
Base Part Number
STW52N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
300W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
Turn On Delay Time
40 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
45m Ω @ 26A, 10V
Vgs(th) (Max) @ Id
4.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
4850pF @ 25V
Current - Continuous Drain (Id) @ 25°C
52A Tc
Gate Charge (Qg) (Max) @ Vgs
160nC @ 10V
Rise Time
75ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
55 ns
Turn-Off Delay Time
115 ns
Continuous Drain Current (ID)
26A
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
250V
Pulsed Drain Current-Max (IDM)
208A
Avalanche Energy Rating (Eas)
500 mJ
Height
20.15mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW52NK25Z Description

STW52NK25Z belongs to the family of N-channel Zener-protected SuperMESH? MOSFETs that are manufactured based on an extreme optimization of well-established strip-based PowerMESH? layout provided by STMicroelectronics. It is able to minimize on-state resistance and ensure better high dv/dt capability in a wide range of applications.

STW52NK25Z Features

Low gate charge
Low on-state resistance
Better high dv/dt capability
Strip-based PowerMESH? layout
Available in the TO-247 package

STW52NK25Z Applications

Off-line power supplies
PFC
Adaptors
High-current, high-speed switching DC choppers

STW52NK25Z More Descriptions

N-channel 250 V, 0.033 Ohm typ., 52 A, Zener protected SuperMESH Power MOSFET in TO-247 package
N-Channel 250 V 45 mO 160 nC Flange Mount SuperMESH MOSFET - TO-247
Mosfet, N Channel, 250V, 52A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STW52NK25Z
Power Field-Effect Transistor, 52A I(D), 250V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Product Comparison

The three parts on the right have similar specifications to STW52NK25Z.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-30 Code

JEDEC-95 Code

Drain-source On Resistance-Max

Factory Lead Time

Weight

Additional Feature

Drain to Source Voltage (Vdss)

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

View Compare
STW52NK25Z

STMicroelectronics

NRND (Last Updated: 8 months ago)

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Not For New Designs

1 (Unlimited)

3

EAR99

45mOhm

Tin (Sn)

FET General Purpose Power

250V

MOSFET (Metal Oxide)

52A

STW52N

3

1

300W Tc

Single

ENHANCEMENT MODE

300W

40 ns

N-Channel

SWITCHING

45m Ω @ 26A, 10V

4.5V @ 150μA

4850pF @ 25V

52A Tc

160nC @ 10V

75ns

10V

±30V

55 ns

115 ns

26A

3.75V

30V

250V

208A

500 mJ

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
STW54NK30Z

STMicroelectronics

-

Through Hole

Through Hole

TO-247-3

-

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

300V

MOSFET (Metal Oxide)

54A

STW54N

3

1

300W Tc

Single

ENHANCEMENT MODE

300W

40 ns

N-Channel

SWITCHING

60m Ω @ 27A, 10V

4.5V @ 150μA

4960pF @ 25V

54A Tc

221nC @ 10V

45ns

10V

±30V

35 ns

116 ns

54A

-

30V

300V

200A

400 mJ

-

-

-

-

No

ROHS3 Compliant

Lead Free

R-PSFM-T3

TO-247AC

0.06Ohm

-

-

-

-

-

-

STW52NK25Z vs STW54NK30Z
STW5NK100Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH3™

e3

Active

1 (Unlimited)

3

EAR99

3.7Ohm

Tin (Sn)

FET General Purpose Power

1kV

MOSFET (Metal Oxide)

3.5A

STW5N

3

1

125W Tc

Single

ENHANCEMENT MODE

125W

22.5 ns

N-Channel

SWITCHING

3.7 Ω @ 1.75A, 10V

4.5V @ 100μA

1154pF @ 25V

3.5A Tc

59nC @ 10V

7.7ns

10V

±30V

19 ns

51.5 ns

3.5A

3.75V

30V

1kV

-

250 mJ

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

TO-247AC

-

12 Weeks

4.535924g

AVALANCHE RATED

1000V

-

-

STW52NK25Z vs STW5NK100Z
STW56N65M2-4

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

Through Hole

Through Hole

TO-247-4

4

-

150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

-

EAR99

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STW56N

-

-

358W Tc

Single

-

-

19 ns

N-Channel

-

62m Ω @ 24.5A, 10V

4V @ 250μA

3900pF @ 100V

49A Tc

93nC @ 10V

-

10V

±25V

-

146 ns

49A

-

25V

-

-

-

21.1mm

15.9mm

5.1mm

-

-

ROHS3 Compliant

-

-

-

-

26 Weeks

-

-

650V

NOT SPECIFIED

NOT SPECIFIED

STW52NK25Z vs STW56N65M2-4