STMicroelectronics STU5N62K3
- Part Number:
- STU5N62K3
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2480623-STU5N62K3
- Description:
- MOSFET N-CH 620V 4.2A IPAK
- Datasheet:
- STU5N62K3
STMicroelectronics STU5N62K3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STU5N62K3.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH3™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1.6Ohm
- Terminal FinishMatte Tin (Sn) - annealed
- Additional FeatureULTRA LOW-ON RESISTANCE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Base Part NumberSTU5N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max70W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation70W
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.6 Ω @ 2.1A, 10V
- Vgs(th) (Max) @ Id4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds680pF @ 50V
- Current - Continuous Drain (Id) @ 25°C4.2A Tc
- Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)21 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)4.2A
- Threshold Voltage3.75V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage620V
- Pulsed Drain Current-Max (IDM)16.8A
- Avalanche Energy Rating (Eas)120 mJ
- Height6.9mm
- Length6.6mm
- Width2.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STU5N62K3 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 120 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 680pF @ 50V.This device conducts a continuous drain current (ID) of 4.2A, which is the maximum continuous current transistor can conduct.Using VGS=620V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 620V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 16.8A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.75V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STU5N62K3 Features
the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 16.8A.
a threshold voltage of 3.75V
STU5N62K3 Applications
There are a lot of STMicroelectronics
STU5N62K3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 120 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 680pF @ 50V.This device conducts a continuous drain current (ID) of 4.2A, which is the maximum continuous current transistor can conduct.Using VGS=620V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 620V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 16.8A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.75V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STU5N62K3 Features
the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 16.8A.
a threshold voltage of 3.75V
STU5N62K3 Applications
There are a lot of STMicroelectronics
STU5N62K3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
STU5N62K3 More Descriptions
N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in IPAK package
Power Field-Effect Transistor, 4.2A I(D), 620V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, N CH, 620V, 4.2A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:620V; On Resistance Rds(on):1.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to 150°C
Power Field-Effect Transistor, 4.2A I(D), 620V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, N CH, 620V, 4.2A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:620V; On Resistance Rds(on):1.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to 150°C
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