STU5N62K3

STMicroelectronics STU5N62K3

Part Number:
STU5N62K3
Manufacturer:
STMicroelectronics
Ventron No:
2480623-STU5N62K3
Description:
MOSFET N-CH 620V 4.2A IPAK
ECAD Model:
Datasheet:
STU5N62K3

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Specifications
STMicroelectronics STU5N62K3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STU5N62K3.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH3™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    1.6Ohm
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Additional Feature
    ULTRA LOW-ON RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    STU5N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    70W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    70W
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.6 Ω @ 2.1A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    680pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    4.2A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    26nC @ 10V
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    21 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    4.2A
  • Threshold Voltage
    3.75V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    620V
  • Pulsed Drain Current-Max (IDM)
    16.8A
  • Avalanche Energy Rating (Eas)
    120 mJ
  • Height
    6.9mm
  • Length
    6.6mm
  • Width
    2.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STU5N62K3 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 120 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 680pF @ 50V.This device conducts a continuous drain current (ID) of 4.2A, which is the maximum continuous current transistor can conduct.Using VGS=620V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 620V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 16.8A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.75V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STU5N62K3 Features
the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 16.8A.
a threshold voltage of 3.75V


STU5N62K3 Applications
There are a lot of STMicroelectronics
STU5N62K3 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
STU5N62K3 More Descriptions
N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in IPAK package
Power Field-Effect Transistor, 4.2A I(D), 620V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, N CH, 620V, 4.2A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:620V; On Resistance Rds(on):1.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to 150°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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