STMicroelectronics STU4N80K5

STU4N80K5 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 74.5 mJ.The maximum input capacitance of this device is 175pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3A.As shown in the table below, the drain current of this device is 3A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 36 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 16.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

STU4N80K5 Features
the avalanche energy rating (Eas) is 74.5 mJ
a continuous drain current (ID) of 3A
the turn-off delay time is 36 ns
a 800V drain to source voltage (Vdss)


STU4N80K5 Applications
There are a lot of STMicroelectronics
STU4N80K5 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,