STMicroelectronics STS4DNF30L

Name: STS4DNF30L
Brand: STMicroelectronics
SKU: 2477648-STS4DNF30L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STS4DNF30L

Manufacturer:: STMicroelectronics

Ventron No:: 2477648-STS4DNF30L

Description:: MOSFET 2N-CH 30V 4A 8SOIC

ECAD Model:

Datasheet:: STS4DNF30L

Specifications

STMicroelectronics STS4DNF30L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS4DNF30L.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
50mOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Max Power Dissipation
2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
4A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STS4D
Pin Count
8
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
11 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 2A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
330pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
9nC @ 10V
Rise Time
100ns
Fall Time (Typ)
22 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
4A
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
4A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
16A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STS4DNF30L Description The STS4DNF60L is a dual N-channel STripFETTM power MOSFET using the unique "single feature size" stripe process of the second generation STMicroelectronics. The resulting transistor has extremely high packing density, low on-resistance, strong avalanche characteristics and fewer key alignment steps, so it has significant manufacturing repeatability. STS4DNF30L Features
■ Standard outline for easy automated surface mount assembly ■ Low threshold drive
STS4DNF30L Applications
Switching application

STS4DNF30L More Descriptions

DUAL N-CHANNEL 30V - 0.039 Ohm 4A SO-8 STripFET POWER MOSFET
Trans MOSFET N-CH 30V 4A 8-Pin SO N T/R
Power MOSFET Transistors N-Ch 30 Volt 3.5 A
Power Field-Effect Transistor, 4A I(D), 30V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CAP CER 5600PF 100V C0G RADIAL

Product Comparison

The three parts on the right have similar specifications to STS4DNF30L.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

FET Technology

FET Feature

Radiation Hardening

RoHS Status

Lead Free

Additional Feature

Configuration

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

Power - Max

Threshold Voltage

Height

Length

Width

REACH SVHC

View Compare
STS4DNF30L

STMicroelectronics

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™

e4

yes

Obsolete

1 (Unlimited)

8

EAR99

50mOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

FET General Purpose Power

30V

2W

GULL WING

260

4A

30

STS4D

8

2

ENHANCEMENT MODE

2W

11 ns

2 N-Channel (Dual)

SWITCHING

50m Ω @ 2A, 10V

1V @ 250μA

330pF @ 25V

9nC @ 10V

100ns

22 ns

25 ns

4A

16V

4A

30V

16A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
STS4DNF60

STMicroelectronics

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™

-

-

Obsolete

1 (Unlimited)

8

EAR99

-

-

FET General Purpose Power

-

2W

GULL WING

-

-

-

STS4D

8

2

ENHANCEMENT MODE

2W

7 ns

2 N-Channel (Dual)

SWITCHING

90m Ω @ 2A, 10V

4V @ 250μA

315pF @ 25V

10nC @ 10V

18ns

6 ns

17 ns

4A

20V

4A

60V

16A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No

ROHS3 Compliant

-

LOW THRESHOLD

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60V

0.09Ohm

-

-

-

-

-

-

STS4DNF30L vs STS4DNF60
STS4DPF30L

STMicroelectronics

-

-

SO-8

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

STS4DNF30L vs STS4DPF30L
STS4DPF20L

STMicroelectronics

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™

e4

-

Obsolete

1 (Unlimited)

8

EAR99

80mOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

Other Transistors

-20V

2W

GULL WING

260

-4A

30

STS4D

8

2

ENHANCEMENT MODE

2W

25 ns

2 P-Channel (Dual)

SWITCHING

80m Ω @ 2A, 10V

2.5V @ 250μA

1350pF @ 25V

16nC @ 5V

35ns

35 ns

125 ns

4A

16V

4A

20V

16A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No

ROHS3 Compliant

Lead Free

LOW THRESHOLD

-

-

-

1.6W

1.6V

1.25mm

5mm

4mm

No SVHC

STS4DNF30L vs STS4DPF20L