STMicroelectronics STS4DNF60

Name: STS4DNF60
Brand: STMicroelectronics
SKU: 2477678-STS4DNF60
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STS4DNF60

Manufacturer:: STMicroelectronics

Ventron No:: 2477678-STS4DNF60

Description:: MOSFET 2N-CH 60V 4A 8SOIC

ECAD Model:

Datasheet:: STS4DNF60

Specifications

STMicroelectronics STS4DNF60 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS4DNF60.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Power
Max Power Dissipation
2W
Terminal Form
GULL WING
Base Part Number
STS4D
Pin Count
8
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
7 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
90m Ω @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
315pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Rise Time
18ns
Drain to Source Voltage (Vdss)
60V
Fall Time (Typ)
6 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
4A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
4A
Drain-source On Resistance-Max
0.09Ohm
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
16A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

Description:

The STMicroelectronics STS4DNF60 is a MOSFET N-Channel Array with a maximum drain-source voltage of 60V and a maximum drain current of 4A. It has a low on-resistance of 0.070 Ohm and is designed for use in high-speed switching applications.

Features:

• Maximum drain-source voltage: 60V
• Maximum drain current: 4A
• Low on-resistance: 0.070 Ohm
• High-speed switching
• RoHS compliant

Applications:

The STS4DNF60 is suitable for a wide range of applications, including:
• DC-DC converters
• Motor control
• Power management
• Automotive applications
• Industrial applications
• Lighting control

STS4DNF60 More Descriptions

Power MOSFET Transistors N Ch 60V 0.070 Ohm 4A
Trans MOSFET N-CH 60V 4A 8-Pin SO N T/R
Power Field-Effect Transistor, 4A I(D), 60V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IC RF TXRX MCU ISM>1GHZ 32-VFQFN

Product Comparison

The three parts on the right have similar specifications to STS4DNF60.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Max Power Dissipation

Terminal Form

Base Part Number

Pin Count

Number of Elements

Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

FET Technology

FET Feature

Radiation Hardening

RoHS Status

JESD-609 Code

Pbfree Code

Resistance

Terminal Finish

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Lead Free

Power - Max

Threshold Voltage

Height

Length

Width

REACH SVHC

View Compare
STS4DNF60

STMicroelectronics

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™

Obsolete

1 (Unlimited)

8

EAR99

LOW THRESHOLD

FET General Purpose Power

2W

GULL WING

STS4D

8

2

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ENHANCEMENT MODE

2W

7 ns

2 N-Channel (Dual)

SWITCHING

90m Ω @ 2A, 10V

4V @ 250μA

315pF @ 25V

10nC @ 10V

18ns

60V

6 ns

17 ns

4A

20V

4A

0.09Ohm

60V

16A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STS4DNF30L

STMicroelectronics

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™

Obsolete

1 (Unlimited)

8

EAR99

-

FET General Purpose Power

2W

GULL WING

STS4D

8

2

-

ENHANCEMENT MODE

2W

11 ns

2 N-Channel (Dual)

SWITCHING

50m Ω @ 2A, 10V

1V @ 250μA

330pF @ 25V

9nC @ 10V

100ns

-

22 ns

25 ns

4A

16V

4A

-

30V

16A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No

ROHS3 Compliant

e4

yes

50mOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

30V

260

4A

30

Lead Free

-

-

-

-

-

-

STS4DNF60 vs STS4DNF30L
STS4DPF20L

STMicroelectronics

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™

Obsolete

1 (Unlimited)

8

EAR99

LOW THRESHOLD

Other Transistors

2W

GULL WING

STS4D

8

2

-

ENHANCEMENT MODE

2W

25 ns

2 P-Channel (Dual)

SWITCHING

80m Ω @ 2A, 10V

2.5V @ 250μA

1350pF @ 25V

16nC @ 5V

35ns

-

35 ns

125 ns

4A

16V

4A

-

20V

16A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No

ROHS3 Compliant

e4

-

80mOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

-20V

260

-4A

30

Lead Free

1.6W

1.6V

1.25mm

5mm

4mm

No SVHC

STS4DNF60 vs STS4DPF20L
STS4DNF60L

STMicroelectronics

-

-

SO-8

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STS4DNF60 vs STS4DNF60L