STMicroelectronics STS25NH3LL
- Part Number:
- STS25NH3LL
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488527-STS25NH3LL
- Description:
- MOSFET N-CH 30V 25A 8-SOIC
- Datasheet:
- STS25NH3LL
STMicroelectronics STS25NH3LL technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS25NH3LL.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™ III
- JESD-609 Codee4
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance3.5MOhm
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Current Rating25A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTS25
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max3.2W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.2W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.5m Ω @ 12.5A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4450pF @ 25V
- Current - Continuous Drain (Id) @ 25°C25A Tc
- Gate Charge (Qg) (Max) @ Vgs40nC @ 4.5V
- Rise Time50ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±18V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time75 ns
- Continuous Drain Current (ID)25A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)18V
- Drain to Source Breakdown Voltage30V
- Height1.25mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STS25NH3LL Description
The STMicroelectronics STS25NH3LL utilizes the advanced design rules of ST's proprietary STripFET? technology. The innovative process coupled with unique metallization techniques makes it possible to produce the most advanced low-voltage Power MOSFET in a SO-8 package. The STS25NH3LL is therefore suitable for demanding DC-DC converter applications where high efficiency at high output current is needed.
STS25NH3LL Features
Optimal RDS(on) x Qg trade-off @ 4.5 V
Conduction losses reduced
Switching losses reduced
STS25NH3LL Applications
Switching applications
The STMicroelectronics STS25NH3LL utilizes the advanced design rules of ST's proprietary STripFET? technology. The innovative process coupled with unique metallization techniques makes it possible to produce the most advanced low-voltage Power MOSFET in a SO-8 package. The STS25NH3LL is therefore suitable for demanding DC-DC converter applications where high efficiency at high output current is needed.
STS25NH3LL Features
Optimal RDS(on) x Qg trade-off @ 4.5 V
Conduction losses reduced
Switching losses reduced
STS25NH3LL Applications
Switching applications
STS25NH3LL More Descriptions
N-CHANNEL 30V - 0.0032 OHM - 25A SO-8 STripFET III MOSFET FOR DC-DC CONVERSION
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.0032Ohm;ID 25A;SO-8;PD 3.2W;VGS /-18V;-55
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:25A; On Resistance, Rds(on):0.0035ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 3.2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 25A; On State Resistance @ Vgs = 4.5V: 5mohm; On State resistance @ Vgs = 10V: 3.5mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 10V
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.0032Ohm;ID 25A;SO-8;PD 3.2W;VGS /-18V;-55
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:25A; On Resistance, Rds(on):0.0035ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 3.2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 25A; On State Resistance @ Vgs = 4.5V: 5mohm; On State resistance @ Vgs = 10V: 3.5mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 10V
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