STMicroelectronics STS10N3LH5

Name: STS10N3LH5
Brand: STMicroelectronics
SKU: 2481532-STS10N3LH5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STS10N3LH5

Manufacturer:: STMicroelectronics

Ventron No:: 2481532-STS10N3LH5

Description:: MOSFET N-CH 30V 10A 8-SOIC

ECAD Model:

Datasheet:: STS10N3LH5

Specifications

STMicroelectronics STS10N3LH5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS10N3LH5.

Lifecycle Status
NRND (Last Updated: 7 months ago)
Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ V
JESD-609 Code
e4
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STS10
Pin Count
8
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Tc
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
4 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
21m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
475pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
4.6nC @ 5V
Rise Time
22ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±22V
Fall Time (Typ)
2.8 ns
Turn-Off Delay Time
13 ns
Continuous Drain Current (ID)
10A
Gate to Source Voltage (Vgs)
22V
Pulsed Drain Current-Max (IDM)
40A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
50 mJ
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STS10N3LH5 Description
STS10N3LH5 belongs to the family of STripFET?V power MOSFETs provided by STMicroelectronics. Based on the STripFET?V technology, it is able to provide extremely low on-resistance RDS(on), low switching gate charge, high avalanche ruggedness, and low gate drive power losses, which makes it well suited for a wide variety of applications.

STS10N3LH5 Features
Low on-resistance RDS(on)
Low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Available in the SO-8 package

STS10N3LH5 Applications
Switching applications

STS10N3LH5 More Descriptions

STS10N3LH5 Series 10 V 10 A 21 mOhm N-Ch STripFET V Power Mosfet - SOIC-8
N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET(TM); V Power MOSFET
Trans MOSFET N-CH 30V 10A 8-Pin SO N T/R
Lv Mosfet Planar & Old |Stmicroelectronics STS10N3LH5
RF Transceiver GFSK/FSK/OOK 3V 32-Pin QFN T/R
Power Field-Effect Transistor, 10A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to STS10N3LH5.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Radiation Hardening

RoHS Status

Lead Free

Additional Feature

Drain-source On Resistance-Max

Voltage - Rated DC

Current Rating

Qualification Status

Power Dissipation

Drain to Source Breakdown Voltage

Pbfree Code

Resistance

Element Configuration

Threshold Voltage

Nominal Vgs

REACH SVHC

View Compare
STS10N3LH5

STMicroelectronics

NRND (Last Updated: 7 months ago)

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™ V

e4

Active

1 (Unlimited)

8

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

STS10

8

1

SINGLE WITH BUILT-IN DIODE

2.5W Tc

ENHANCEMENT MODE

4 ns

N-Channel

SWITCHING

21m Ω @ 5A, 10V

1V @ 250μA

475pF @ 25V

10A Tc

4.6nC @ 5V

22ns

30V

4.5V 10V

±22V

2.8 ns

13 ns

10A

22V

40A

30V

50 mJ

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STS19N3LLH6

STMicroelectronics

-

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

DeepGATE™, STripFET™ VI

-

Obsolete

1 (Unlimited)

8

EAR99

-

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

STS19

8

1

SINGLE WITH BUILT-IN DIODE

2.7W Ta

ENHANCEMENT MODE

9.5 ns

N-Channel

SWITCHING

5.6m Ω @ 9.5A, 10V

1V @ 250μA

1690pF @ 25V

19A Tc

17nC @ 15V

30ns

30V

4.5V 10V

±20V

12 ns

37 ns

19A

20V

76A

30V

-

No

ROHS3 Compliant

-

ULTRA-LOW RESISTANCE

0.0075Ohm

-

-

-

-

-

-

-

-

-

-

-

STS10N3LH5 vs STS19N3LLH6
STS10PF30L

STMicroelectronics

-

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™ II

e4

Obsolete

1 (Unlimited)

8

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

STS10

8

1

SINGLE WITH BUILT-IN DIODE

2.5W Tc

ENHANCEMENT MODE

-

P-Channel

SWITCHING

14m Ω @ 5A, 10V

1V @ 250μA

2300pF @ 25V

10A Tc

39nC @ 4.5V

87ns

30V

4.5V 10V

±16V

27 ns

89 ns

10A

16V

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-30V

-10A

Not Qualified

2.5W

-30V

-

-

-

-

-

-

STS10N3LH5 vs STS10PF30L
STS11N3LLH5

STMicroelectronics

-

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™ V

e4

Obsolete

1 (Unlimited)

8

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

STS11

8

1

-

2.7W Tc

ENHANCEMENT MODE

4 ns

N-Channel

SWITCHING

14m Ω @ 5.5A, 10V

1V @ 250μA

724pF @ 25V

11A Tc

5nC @ 4.5V

4.2ns

-

4.5V 10V

22V, -20V

3.5 ns

21 ns

11A

22V

44A

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

2.7W

30V

yes

13.2mOhm

Single

1V

1 V

No SVHC

STS10N3LH5 vs STS11N3LLH5