STMicroelectronics STQ1NC45R-AP

STQ1NC45R-AP Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 25 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 160pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 500mA amps.A device can conduct a maximum continuous current of [0.5A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 2A.The DS breakdown voltage should be maintained above 450V to maintain normal operation.To operate this transistor, you will need a 450V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

STQ1NC45R-AP Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 500mA
based on its rated peak drain current 2A.
a 450V drain to source voltage (Vdss)


STQ1NC45R-AP Applications
There are a lot of STMicroelectronics
STQ1NC45R-AP applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies