STMicroelectronics STP6NM60N

STP6NM60N Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 65 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 420pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STP6NM60N Features
the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 4.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns


STP6NM60N Applications
There are a lot of STMicroelectronics
STP6NM60N applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies