STMicroelectronics STP60NF06FP

Name: STP60NF06FP
Brand: STMicroelectronics
SKU: 2484781-STP60NF06FP
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP60NF06FP

Manufacturer:: STMicroelectronics

Ventron No:: 2484781-STP60NF06FP

Description:: MOSFET N-CH 60V 30A TO220FP

ECAD Model:

Datasheet:: STP60NF06FP

Specifications

STMicroelectronics STP60NF06FP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP60NF06FP.

Lifecycle Status
NRND (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
16mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
60A
Base Part Number
STP60N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
30W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
30W
Case Connection
ISOLATED
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1810pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
66nC @ 10V
Rise Time
108ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
30A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP60NF06FP Description
The STP60NF06FP Power MOSFET was specifically created to reduce gate charge and input capacitance using STMicroelectronics' proprietary STripFET technology. Therefore, it is appropriate for use as the primary switch in modern, high-efficiency, isolated DC-DC converters for applications in telecommunications and computing. Additionally, any application with minimal gate charge drive needs is suitable for it.

STP60NF06FP Features
100% avalanche tested
Exceptional dv/dt capability
Application oriented characterization

STP60NF06FP Applications
Industrial
Personal electronics
Communications equipment

STP60NF06FP More Descriptions

Transistor MOSFET N-CH 60V 30A 3-Pin (3 Tab) TO-220FP
N-Channel 60V - 0.014Ohm - 60A - TO-220FP StripFET(TM) II POWER MOSFET
Power Field-Effect Transistor, 30A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Power Mosfet, Stripfet, 60V, 30A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Power Dissipation:30W; Msl:- Rohs Compliant: Yes |Stmicroelectronics STP60NF06FP

Product Comparison

The three parts on the right have similar specifications to STP60NF06FP.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

RoHS Status

Lead Free

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Pbfree Code

Threshold Voltage

Pulsed Drain Current-Max (IDM)

Recovery Time

Height

Length

Width

REACH SVHC

View Compare
STP60NF06FP

STMicroelectronics

NRND (Last Updated: 8 months ago)

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Not For New Designs

1 (Unlimited)

3

EAR99

16mOhm

Matte Tin (Sn)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

60A

STP60N

3

1

30W Tc

Single

ENHANCEMENT MODE

30W

ISOLATED

16 ns

N-Channel

SWITCHING

16m Ω @ 30A, 10V

4V @ 250μA

1810pF @ 25V

30A Tc

66nC @ 10V

108ns

10V

±20V

20 ns

43 ns

30A

TO-220AB

20V

60V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP60NH2LL

STMicroelectronics

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

STripFET™

-

Obsolete

1 (Unlimited)

3

EAR99

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP60N

3

1

60W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

11m Ω @ 20A, 10V

1V @ 250μA

990pF @ 25V

40A Tc

27nC @ 4.5V

-

4.5V 10V

±18V

-

-

40A

TO-220AB

-

-

-

ROHS3 Compliant

-

LOW THRESHOLD

SINGLE

245

40

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

24V

0.0135Ohm

24V

-

-

-

-

-

-

-

-

STP60NF06FP vs STP60NH2LL
STP65NF06

STMicroelectronics

-

-

-

TO-220AB

-

-

-

Tube-packed

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STP60NF06FP vs STP65NF06
STP6NK50Z

STMicroelectronics

-

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

1.2Ohm

Matte Tin (Sn)

FET General Purpose Power

500V

MOSFET (Metal Oxide)

5.6A

STP6N

3

1

90W Tc

Single

ENHANCEMENT MODE

90W

-

12 ns

N-Channel

SWITCHING

1.2 Ω @ 2.8A, 10V

4.5V @ 50μA

690pF @ 25V

5.6A Tc

24.6nC @ 10V

23.5ns

10V

±30V

23 ns

31 ns

5.6A

TO-220AB

30V

500V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

yes

3.75V

22.4A

254 ns

15.75mm

10.4mm

4.6mm

No SVHC

STP60NF06FP vs STP6NK50Z