STMicroelectronics STP60NF06

Name: STP60NF06
Brand: STMicroelectronics
SKU: 2478266-STP60NF06
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP60NF06

Manufacturer:: STMicroelectronics

Ventron No:: 2478266-STP60NF06

Description:: MOSFET N-CH 60V 60A TO-220

ECAD Model:

Datasheet:: STP60NF06

Specifications

STMicroelectronics STP60NF06 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP60NF06.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Manufacturer Package Identifier
TO-220-POA
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
16mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
60A
Base Part Number
STP60N
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
110W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
110W
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1660pF @ 25V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Gate Charge (Qg) (Max) @ Vgs
73nC @ 10V
Rise Time
108ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
60A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
240A
Dual Supply Voltage
60V
Max Junction Temperature (Tj)
175°C
Height
19.68mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP60NF06 Description
This Power MOSFET series, which was created using STMicroelectronics' unique S Trip FET technology, was created with the goal of reducing input capacitance and gate charge. As a result, it can be used as the primary switch in sophisticated high-efficiency isolated DC-DC converters for telecommunications and computer applications. It's also suitable for any application requiring a low gate charge drive. STP60NF06 has a maximum power dissipation of 110W and an operating temperature of -55°C175°C TJ. STP60NF06 features three pins and is packaged in TO-220-3 format.

STP60NF06 Features
Exceptional dv/dt capability
100% avalanche tested
Application-oriented characterization

STP60NF06 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

STP60NF06 More Descriptions

N-Channel 60V - 0.014Ohm - 60A - TO-220 StripFET(TM) II MOSFET
STP60NF06 N-Channel MOSFET, 60 A, 60 V STripFET II, 3-Pin TO-220 STMicroelectronics
Trans MOSFET N-CH 60V 60A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation P
Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP60NF06.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Manufacturer Package Identifier

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-30 Code

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Weight

Case Connection

Drain Current-Max (Abs) (ID)

Drain to Source Voltage (Vdss)

View Compare
STP60NF06

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

TO-220-POA

-55°C~175°C TJ

Tube

STripFET™ II

e3

Active

1 (Unlimited)

3

EAR99

16mOhm

Matte Tin (Sn)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

60A

STP60N

3

1

1

110W Tc

Single

ENHANCEMENT MODE

110W

15 ns

N-Channel

SWITCHING

16m Ω @ 30A, 10V

4V @ 250μA

1660pF @ 25V

60A Tc

73nC @ 10V

108ns

10V

±20V

20 ns

45 ns

60A

4V

TO-220AB

20V

60V

240A

60V

175°C

19.68mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
STP60NE06-16

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-

175°C TJ

Tube

-

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

60A

STP60N

3

1

-

150W Tc

Single

ENHANCEMENT MODE

150W

40 ns

N-Channel

SWITCHING

16m Ω @ 30A, 10V

4V @ 250μA

6200pF @ 25V

60A Tc

160nC @ 10V

125ns

10V

±20V

150 ns

-

60A

-

TO-220AB

20V

60V

240A

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

R-PSFM-T3

0.016Ohm

350 mJ

-

-

-

-

STP60NF06 vs STP60NE06-16
STP6NK60ZFP

STMicroelectronics

NRND (Last Updated: 7 months ago)

-

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-

-55°C~150°C TJ

Tube

SuperMESH™

e3

Not For New Designs

1 (Unlimited)

3

EAR99

1.2Ohm

Matte Tin (Sn) - annealed

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP6N

3

1

-

30W Tc

Single

ENHANCEMENT MODE

32W

14 ns

N-Channel

SWITCHING

1.2 Ω @ 3A, 10V

4.5V @ 100μA

905pF @ 25V

6A Tc

46nC @ 10V

14ns

10V

±30V

19 ns

47 ns

6A

3.75V

TO-220AB

30V

600V

24A

-

-

9.3mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

4.535924g

ISOLATED

6A

-

STP60NF06 vs STP6NK60ZFP
STP6N90K5

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

17 Weeks

-

Through Hole

TO-220-3

-

-

-

-55°C~150°C TJ

Tube

MDmesh™ K5

-

Active

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

STP6N

-

-

-

110W Tc

-

-

-

-

N-Channel

-

1.1 Ω @ 3A, 10V

5V @ 100μA

-

6A Tc

-

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

900V

STP60NF06 vs STP6N90K5