STP5NK80ZFP

STMicroelectronics STP5NK80ZFP

Part Number:
STP5NK80ZFP
Manufacturer:
STMicroelectronics
Ventron No:
2484898-STP5NK80ZFP
Description:
MOSFET N-CH 800V 4.3A TO-220FP
ECAD Model:
Datasheet:
STP5NK80ZFP

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Specifications
STMicroelectronics STP5NK80ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP5NK80ZFP.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    PowerMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    2.4Ohm
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STP5N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    30W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    30W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.4 Ω @ 2.15A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    910pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4.3A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    45.5nC @ 10V
  • Rise Time
    25ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    30 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    4.3A
  • Threshold Voltage
    3.75V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    800V
  • Height
    9.3mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP5NK80ZFP Description   STP5NK80ZFP N-channel MOSFET is based on an original, unique vertical structure. STP5NK80ZFP MOSFET results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. STP5NK80ZFP STMicroelectronics is utilized in Switching applications.     STP5NK80ZFP Features   Gate charge minimized Low intrinsic capacitances Switching application 100% avalanche tested     STP5NK80ZFP Applications   Notebook PC Synchronous Buck Notebook Vcore and Server Notebook Battery Pack Load Switch
STP5NK80ZFP More Descriptions
N-channel 800 V, 1.9 Ohm, 4.3 A, Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
Trans MOSFET N-CH 800V 4.3A 3-Pin(3 Tab) TO-220FP Tube / MOSFET N-CH 800V 4.3A TO-220FP
N Channel Mosfet, 800V, 4.3A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.3A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STP5NK80ZFP
Product Comparison
The three parts on the right have similar specifications to STP5NK80ZFP.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Voltage - Rated DC
    Current Rating
    JEDEC-95 Code
    Recovery Time
    Additional Feature
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Pbfree Code
    View Compare
  • STP5NK80ZFP
    STP5NK80ZFP
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    4.535924g
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    2.4Ohm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP5N
    3
    1
    30W Tc
    Single
    ENHANCEMENT MODE
    30W
    ISOLATED
    18 ns
    N-Channel
    SWITCHING
    2.4 Ω @ 2.15A, 10V
    4.5V @ 100μA
    910pF @ 25V
    4.3A Tc
    45.5nC @ 10V
    25ns
    10V
    ±30V
    30 ns
    45 ns
    4.3A
    3.75V
    30V
    800V
    9.3mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP5NK50Z
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    1.5Ohm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP5N
    3
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    -
    15 ns
    N-Channel
    SWITCHING
    1.5 Ω @ 2.2A, 10V
    4.5V @ 50μA
    535pF @ 25V
    4.4A Tc
    28nC @ 10V
    10ns
    10V
    ±30V
    15 ns
    32 ns
    4.4A
    3.75V
    30V
    500V
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    500V
    4.4A
    TO-220AB
    310 ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP5NB60
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    SILICON
    150°C TJ
    Tube
    PowerMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    3
    1
    100W Tc
    Single
    ENHANCEMENT MODE
    100W
    -
    -
    N-Channel
    SWITCHING
    2 Ω @ 2.5A, 10V
    5V @ 250μA
    884pF @ 25V
    5A Tc
    30nC @ 10V
    10ns
    10V
    ±30V
    7 ns
    -
    5A
    -
    30V
    600V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    600V
    5A
    TO-220AB
    -
    AVALANCHE RATED
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    5A
    2Ohm
    20A
    300 mJ
    -
  • STP5NK65Z
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    -
    -
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP5N
    3
    1
    85W Tc
    Single
    ENHANCEMENT MODE
    85W
    -
    20 ns
    N-Channel
    SWITCHING
    1.8 Ω @ 2.1A, 10V
    4.5V @ 50μA
    680pF @ 25V
    5A Tc
    35nC @ 10V
    15ns
    10V
    ±30V
    40 ns
    140 ns
    5A
    -
    30V
    650V
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    TO-220AB
    -
    AVALANCHE RATED
    -
    -
    -
    R-PSFM-T3
    -
    5A
    -
    20A
    -
    yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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