STMicroelectronics STP5NK60ZFP

Name: STP5NK60ZFP
Brand: STMicroelectronics
SKU: 2483648-STP5NK60ZFP
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP5NK60ZFP

Manufacturer:: STMicroelectronics

Ventron No:: 2483648-STP5NK60ZFP

Description:: MOSFET N-CH 600V 5A TO-220FP

ECAD Model:

Datasheet:: STP5NK60ZFP

Specifications

STMicroelectronics STP5NK60ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP5NK60ZFP.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP5N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
25W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
25W
Case Connection
ISOLATED
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
690pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Rise Time
25ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
25 ns
Turn-Off Delay Time
36 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
5A
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
20A
Avalanche Energy Rating (Eas)
220 mJ
Height
16.4mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

STP5NK60ZFP Description

STP5NK60ZFP is a 600V N-channel SuperMESH? Power MOSFET. The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh? products.
STP5NK60ZFP Features

typical RDS(on) = 1.2Ω
extremely high dv/dt capability
100% avalanche tested
gate charge minimized
very low intrinsic capacitances
very good manufacturing repeatibility
STP5NK60ZFP Applications

high current, high speed switching
ideal for off-line power supplies, adaptors and pfc
lighting
Switching applications

STP5NK60ZFP More Descriptions

N-CHANNEL 600V - 1.2 Ohm - 5A TO-220FP Zener-Protected SuperMESH™ Power MOSFET
N-channel 600 V, 1.2 Ohm typ., 5 A SuperMESH Power MOSFET in TO-220FP packageCiiva Crawler
Trans MOSFET N-CH 600V 5A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N Channel, 600V, 5A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STP5NK60ZFP
MOSFET, N CH, 600V, 5A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 25W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C

Product Comparison

The three parts on the right have similar specifications to STP5NK60ZFP.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Additional Feature

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Lead Free

Resistance

Recovery Time

JESD-30 Code

Drain-source On Resistance-Max

View Compare
STP5NK60ZFP

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STP5N

3

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

16 ns

N-Channel

SWITCHING

1.6 Ω @ 2.5A, 10V

4.5V @ 50μA

690pF @ 25V

5A Tc

34nC @ 10V

25ns

10V

±30V

25 ns

36 ns

5A

3.75V

TO-220AB

30V

5A

600V

20A

220 mJ

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-
STP5NK90Z

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP5N

3

1

125W Tc

Single

ENHANCEMENT MODE

125W

-

-

N-Channel

SWITCHING

2.5 Ω @ 2.25A, 10V

4.5V @ 100μA

1160pF @ 25V

4.5A Tc

41.5nC @ 10V

7.2ns

10V

±30V

19 ns

52 ns

4.5A

3.75V

TO-220AB

30V

-

900V

18A

-

-

-

-

No SVHC

-

ROHS3 Compliant

AVALANCHE RATED

900V

NOT SPECIFIED

not_compliant

4.5A

NOT SPECIFIED

Not Qualified

Lead Free

-

-

-

-

STP5NK60ZFP vs STP5NK90Z
STP5NK50Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP5N

3

1

70W Tc

Single

ENHANCEMENT MODE

70W

-

15 ns

N-Channel

SWITCHING

1.5 Ω @ 2.2A, 10V

4.5V @ 50μA

535pF @ 25V

4.4A Tc

28nC @ 10V

10ns

10V

±30V

15 ns

32 ns

4.4A

3.75V

TO-220AB

30V

-

500V

-

-

-

-

-

No SVHC

No

ROHS3 Compliant

-

500V

-

-

4.4A

-

-

Lead Free

1.5Ohm

310 ns

-

-

STP5NK60ZFP vs STP5NK50Z
STP5NB60

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

SILICON

150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

-

3

1

100W Tc

Single

ENHANCEMENT MODE

100W

-

-

N-Channel

SWITCHING

2 Ω @ 2.5A, 10V

5V @ 250μA

884pF @ 25V

5A Tc

30nC @ 10V

10ns

10V

±30V

7 ns

-

5A

-

TO-220AB

30V

5A

600V

20A

300 mJ

-

-

-

-

-

Non-RoHS Compliant

AVALANCHE RATED

600V

NOT SPECIFIED

not_compliant

5A

NOT SPECIFIED

Not Qualified

Contains Lead

-

-

R-PSFM-T3

2Ohm

STP5NK60ZFP vs STP5NB60