STMicroelectronics STP5NK52ZD

Name: STP5NK52ZD
Brand: STMicroelectronics
SKU: 2488043-STP5NK52ZD
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP5NK52ZD

Manufacturer:: STMicroelectronics

Ventron No:: 2488043-STP5NK52ZD

Description:: MOSFET N-CH 520V 4.4A TO-220

ECAD Model:

Datasheet:: STP5NK52ZD

Specifications

STMicroelectronics STP5NK52ZD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP5NK52ZD.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP5N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
25W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
70W
Turn On Delay Time
11.4 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
529pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.4A Tc
Gate Charge (Qg) (Max) @ Vgs
16.9nC @ 10V
Rise Time
13.6ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
23.1 ns
Continuous Drain Current (ID)
4.4A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
520V
Height
15.75mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

STP5NK52ZD Overview
A device's maximal input capacitance is 529pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.4A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 520V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 23.1 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).

STP5NK52ZD Features
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 520V voltage
the turn-off delay time is 23.1 ns

STP5NK52ZD Applications
There are a lot of STMicroelectronics
STP5NK52ZD applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

STP5NK52ZD More Descriptions

N-channel 520V - 1.22Ohm - 4.4A - TO-220 - DPAK - I2PAK - IPAK
Trans MOSFET N-CH 520V 4.4A 3-Pin(3 Tab) TO-220AB Tube
N-Channel 520 V 4.4 A 70 W Through Hole SuperMESH Power MOSFET - TO-220
Power Field-Effect Transistor, 4.4A I(D), 520V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
520V 4.4A 1.22´Î@10V2.2A 70W 3.75V@50uA 13.4pF@25V N Channel 529pF@25V 16.9nC@10V -55¡Í~ 150¡Í@(Tj) TO-220-3 MOSFETs ROHS
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.4A; Drain Source Voltage Vds: 520V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio

Product Comparison

The three parts on the right have similar specifications to STP5NK52ZD.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

RoHS Status

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Lead Free

Pbfree Code

Resistance

Threshold Voltage

REACH SVHC

View Compare
STP5NK52ZD

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Not For New Designs

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

STP5N

3

1

25W Tc

Single

ENHANCEMENT MODE

70W

11.4 ns

N-Channel

SWITCHING

1.5 Ω @ 2.2A, 10V

4.5V @ 50μA

529pF @ 25V

4.4A Tc

16.9nC @ 10V

13.6ns

10V

±30V

15 ns

23.1 ns

4.4A

TO-220AB

30V

520V

15.75mm

10.4mm

4.6mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP5NB60

STMicroelectronics

-

Through Hole

Through Hole

TO-220-3

-

SILICON

150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

-

3

1

100W Tc

Single

ENHANCEMENT MODE

100W

-

N-Channel

SWITCHING

2 Ω @ 2.5A, 10V

5V @ 250μA

884pF @ 25V

5A Tc

30nC @ 10V

10ns

10V

±30V

7 ns

-

5A

TO-220AB

30V

600V

-

-

-

-

Non-RoHS Compliant

600V

NOT SPECIFIED

not_compliant

5A

NOT SPECIFIED

R-PSFM-T3

Not Qualified

5A

2Ohm

20A

300 mJ

Contains Lead

-

-

-

-

STP5NK52ZD vs STP5NB60
STP5NK65Z

STMicroelectronics

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

-

Matte Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

STP5N

3

1

85W Tc

Single

ENHANCEMENT MODE

85W

20 ns

N-Channel

SWITCHING

1.8 Ω @ 2.1A, 10V

4.5V @ 50μA

680pF @ 25V

5A Tc

35nC @ 10V

15ns

10V

±30V

40 ns

140 ns

5A

TO-220AB

30V

650V

-

-

-

No

ROHS3 Compliant

-

-

-

-

-

R-PSFM-T3

-

5A

-

20A

-

-

yes

-

-

-

STP5NK52ZD vs STP5NK65Z
STP5N52K3

STMicroelectronics

-

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH3™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

FET General Purpose Power

MOSFET (Metal Oxide)

STP5N

3

1

70W Tc

Single

ENHANCEMENT MODE

70W

9 ns

N-Channel

SWITCHING

1.5 Ω @ 2.2A, 10V

4.5V @ 50μA

450pF @ 100V

4.4A Tc

14nC @ 10V

11ns

10V

±30V

16 ns

29 ns

4.4A

TO-220AB

30V

525V

15.75mm

10.4mm

4.6mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

Lead Free

yes

1.5Ohm

3.75V

No SVHC

STP5NK52ZD vs STP5N52K3

Certification

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STP5NK5~~(4)~~
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Part Number	Manufacturers	Description	Stock	Price
STP5NK52ZD DISTI #STP5NK52ZD	STMicroelectronics	MOSFET N-CH 520V 4.4A TO-220 RoHS: Compliant	0	2000 $0.7623
STP5NK52ZD DISTI #STP5NK52ZD	STMicroelectronics	Trans MOSFET N-CH 520V 4.4A 3-Pin(3 Tab) TO-220 Tu RoHS: Compliant	200	50 $0.5079 100 $0.4149 200 $0.3809 300 $0.3509 500 $0.3259
STP5NK52ZD DISTI #STP5NK52ZD	STMicroelectronics	Trans MOSFET N-CH 520V 4.4A 3-Pin(3 Tab) TO-220 Tu RoHS: Compliant	0	1000 $0.7719 2000 $0.7349 4000 $0.7019 6000 $0.6709 10000 $0.6569
STP5NK52ZD DISTI #STP5NK52ZD	STMicroelectronics	MOSFET N Ch 520V Zener SuperMESH RoHS: Compliant	0
STP5NK52ZD DISTI #STP5NK52ZD	STMicroelectronics	MOSFET N-CHANNEL 520V 4.4A TO220, TU	265	25 $1.084 50 $0.956 250 $0.83 500 $0.728
STP5NK52ZD DISTI #STP5NK52ZD	STMicroelectronics	MOSFET N-CHANNEL 520V 4.4A TO220, PK	215	5 $1.362 25 $1.084 50 $0.956 250 $0.83 500 $0.728
STP5NK52ZD DISTI #STP5NK52ZD	STMicroelectronics		1000
STP5NK52ZD DISTI #STP5NK52ZD	STMicroelectronics	N-CH 520V 4,4A 1500mOhm TO220-3 RoHS: Compliant	15000	50 $0.5471 100 $0.5159 200 $0.4846 400 $0.4377 800 $0.4221

STMicroelectronics STP5NK52ZD

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