STMicroelectronics STP55NF06L

Name: STP55NF06L
Brand: STMicroelectronics
SKU: 2478402-STP55NF06L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP55NF06L

Manufacturer:: STMicroelectronics

Ventron No:: 2478402-STP55NF06L

Description:: MOSFET N-CH 60V 55A TO-220

ECAD Model:

Datasheet:: STP55NF06L

Part Pictures

Specifications

STMicroelectronics STP55NF06L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP55NF06L.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
18mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
55A
Base Part Number
STP55N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
95W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
95W
Case Connection
DRAIN
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
18m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id
1.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
55A Tc
Gate Charge (Qg) (Max) @ Vgs
37nC @ 4.5V
Rise Time
100ns
Drive Voltage (Max Rds On,Min Rds On)
10V 5V
Vgs (Max)
±16V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
55A
Threshold Voltage
1.7V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
220A
Nominal Vgs
1.7 V
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP55NF06L Description

The STP55NF06L is a N-channel Power MOSFET, latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STP55NF06L Features

Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
ultra-low gate charge?
?low on-resistance

STP55NF06L Applications

Audio
Signal Processing
Switching application
SMPS, battery-powered motors,?motor controls and
drives,
Inverters
computers

STP55NF06L More Descriptions

N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a TO-220 package
N-Channel 60 V 18 mOhm STripFET II Power MosFet - TO-220
Trans MOSFET N-CH 60V 55A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 60V, 55A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Powe

Product Comparison

The three parts on the right have similar specifications to STP55NF06L.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Recovery Time

JESD-30 Code

Qualification Status

Avalanche Energy Rating (Eas)

Pbfree Code

Additional Feature

Drain Current-Max (Abs) (ID)

View Compare
STP55NF06L

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Active

1 (Unlimited)

3

EAR99

18mOhm

Matte Tin (Sn)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

55A

STP55N

3

1

95W Tc

Single

ENHANCEMENT MODE

95W

DRAIN

20 ns

N-Channel

SWITCHING

18m Ω @ 27.5A, 10V

1.7V @ 250μA

1700pF @ 25V

55A Tc

37nC @ 4.5V

100ns

10V 5V

±16V

20 ns

40 ns

55A

1.7V

TO-220AB

16V

60V

220A

1.7 V

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
STP5NK50Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

-

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

1.5Ohm

Matte Tin (Sn)

FET General Purpose Power

500V

MOSFET (Metal Oxide)

4.4A

STP5N

3

1

70W Tc

Single

ENHANCEMENT MODE

70W

-

15 ns

N-Channel

SWITCHING

1.5 Ω @ 2.2A, 10V

4.5V @ 50μA

535pF @ 25V

4.4A Tc

28nC @ 10V

10ns

10V

±30V

15 ns

32 ns

4.4A

3.75V

TO-220AB

30V

500V

-

-

-

-

-

No SVHC

No

ROHS3 Compliant

Lead Free

310 ns

-

-

-

-

-

-

STP55NF06L vs STP5NK50Z
STP5NB40

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

-

SILICON

150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

-

-

Matte Tin (Sn)

FET General Purpose Power

400V

MOSFET (Metal Oxide)

4.7A

STP5N

3

1

80W Tc

Single

ENHANCEMENT MODE

80W

-

-

N-Channel

SWITCHING

1.8 Ω @ 2.3A, 10V

5V @ 250μA

405pF @ 25V

4.7A Tc

20nC @ 10V

8ns

10V

±30V

6 ns

-

4.7A

-

TO-220AB

30V

400V

19A

-

-

-

-

-

-

ROHS3 Compliant

Contains Lead

-

R-PSFM-T3

Not Qualified

200 mJ

-

-

-

STP55NF06L vs STP5NB40
STP5NK65Z

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

-

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

-

-

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP5N

3

1

85W Tc

Single

ENHANCEMENT MODE

85W

-

20 ns

N-Channel

SWITCHING

1.8 Ω @ 2.1A, 10V

4.5V @ 50μA

680pF @ 25V

5A Tc

35nC @ 10V

15ns

10V

±30V

40 ns

140 ns

5A

-

TO-220AB

30V

650V

20A

-

-

-

-

-

No

ROHS3 Compliant

-

-

R-PSFM-T3

-

-

yes

AVALANCHE RATED

5A

STP55NF06L vs STP5NK65Z