STMicroelectronics STP4NB80

Name: STP4NB80
Brand: STMicroelectronics
SKU: 2851447-STP4NB80
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP4NB80

Manufacturer:: STMicroelectronics

Ventron No:: 2851447-STP4NB80

Description:: MOSFET N-CH 800V 4A TO-220

ECAD Model:

Datasheet:: STP4NB80(FP)

Specifications

STMicroelectronics STP4NB80 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP4NB80.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
800V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
245
Reach Compliance Code
not_compliant
Current Rating
4A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP4N
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
100W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
100W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
920pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4A Tc
Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
9 ns
Continuous Drain Current (ID)
4A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
4A
Drain to Source Breakdown Voltage
800V
Avalanche Energy Rating (Eas)
230 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

STP4NB80 Description
The STP4NB80 is a PowerMESH? MOSFET designed by STMicroelectronics. Using the most recent high voltage MESH OVERLAY technology, STMicroelectronics has created an innovative family of power MOSFETs with remarkable performance. The unique patent-pending strip arrangement, when combined with the Company's proprietary edge termination structure, results in the lowest RDS(on) per area, superior avalanche and dv/dt capabilities, and unrivalled gate charge and switching characteristics.

STP4NB80 Features
Typical RDS(ON)=3 Ω
Extremely high dv/dt capabilities
100% avalanche tested
Very Low intrinsic capacitances
Gate charge minimized

STP4NB80 Applications
High current, high-speed switching
Switch-mode power supplies (SMPS)
DC-AC converters for welding
Equipment and uninterruptible
Power supplies and motor drive

STP4NB80 More Descriptions

MOSFET N-CH 800V 4A TO-220
Power Field-Effect Transistor, 4A I(D), 800V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CHANNEL 800V - 3 OHM - 4A - TO-220
French Electronic Distributor since 1988
CAP CER 0.047UF 50V X7R RADIAL

Product Comparison

The three parts on the right have similar specifications to STP4NB80.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Drain to Source Voltage (Vdss)

Number of Pins

Weight

Resistance

Additional Feature

Turn On Delay Time

Turn-Off Delay Time

Threshold Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

View Compare
STP4NB80

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

800V

MOSFET (Metal Oxide)

245

not_compliant

4A

NOT SPECIFIED

STP4N

3

R-PSFM-T3

Not Qualified

1

100W Tc

Single

ENHANCEMENT MODE

100W

N-Channel

SWITCHING

3.3 Ω @ 2A, 10V

5V @ 250μA

920pF @ 25V

4A Tc

29nC @ 10V

8ns

10V

±30V

9 ns

4A

TO-220AB

30V

4A

800V

230 mJ

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP45N40DM2AG

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-55°C~150°C TJ

Tube

Automotive, AEC-Q101, MDmesh™ DM2

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

-

NOT SPECIFIED

STP45N

-

-

-

-

250W Tc

-

-

-

N-Channel

-

72m Ω @ 19A, 10V

5V @ 250μA

2600pF @ 100V

38A Tc

56nC @ 10V

-

10V

±25V

-

38A

-

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

17 Weeks

400V

-

-

-

-

-

-

-

-

-

-

-

-

STP4NB80 vs STP45N40DM2AG
STP4NK80Z

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

FET General Purpose Power

800V

MOSFET (Metal Oxide)

-

-

3A

-

STP4N

3

-

-

1

80W Tc

Single

ENHANCEMENT MODE

80W

N-Channel

SWITCHING

3.5 Ω @ 1.5A, 10V

4.5V @ 50μA

575pF @ 25V

3A Tc

22.5nC @ 10V

12ns

10V

±30V

32 ns

3A

TO-220AB

30V

3A

800V

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

12 Weeks

-

3

4.535924g

3.5Ohm

AVALANCHE RATED

13 ns

35 ns

3.75V

9.15mm

10.4mm

4.6mm

No SVHC

No

STP4NB80 vs STP4NK80Z
STP40N65M2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

-

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

-

NOT SPECIFIED

STP40N

-

-

-

-

250W Tc

Single

-

-

N-Channel

-

99m Ω @ 16A, 10V

4V @ 250μA

2355pF @ 100V

32A Tc

56.5nC @ 10V

-

10V

±25V

-

32A

-

25V

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

16 Weeks

650V

3

-

-

-

15 ns

96.5 ns

-

15.75mm

10.4mm

4.6mm

-

-

STP4NB80 vs STP40N65M2