STMicroelectronics STN3NF06L
- Part Number:
- STN3NF06L
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2477834-STN3NF06L
- Description:
- MOSFET N-CH 60V 4A SOT223
- Datasheet:
- STN3NF06L
STMicroelectronics STN3NF06L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STN3NF06L.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Additional FeatureLOW THRESHOLD
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating4A
- Base Part NumberSTN3N
- Pin Count4
- Number of Elements1
- Power Dissipation-Max3.3W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.3W
- Case ConnectionDRAIN
- Turn On Delay Time9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs100m Ω @ 1.5A, 10V
- Vgs(th) (Max) @ Id2.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds340pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4A Tc
- Gate Charge (Qg) (Max) @ Vgs9nC @ 5V
- Rise Time25ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)4A
- Threshold Voltage2.8V
- Gate to Source Voltage (Vgs)16V
- Drain Current-Max (Abs) (ID)4A
- Drain to Source Breakdown Voltage60V
- Height1.8mm
- Length6.5mm
- Width3.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STN3NF06L Description
The Power MOSFET STN3NF06L realized with STMicroelectronics unique STripFET? process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also suitable for any application with low gate charge drive requirements.
STN3NF06L Features
60V, 4A N-channel STripFET? II power MOSFET in a 4 pin SOT-223 package
Exceptional dv/dt capability
100% avalanche tested
Low threshold drive
Suitable for switching applications
STN3NF06L Applications
Industrial
Aerospace & defenseAppliancesBuilding automationElectronic point of sale (EPOS)Factory automation & controlGrid infrastructureIndustrial transport (non-car & non-light truck)LightingMedicalMotor drivesPower deliveryPro audio, video & signageTest & measurement
Enterprise systems
Data center & enterprise computingEnterprise machineEnterprise projectors
Personal electronics
Connected peripherals & printersData storageGamingHome theater & entertainmentMobile phonesPC & notebooksPortable electronicsTabletsTVWearables (non-medical)
The Power MOSFET STN3NF06L realized with STMicroelectronics unique STripFET? process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also suitable for any application with low gate charge drive requirements.
STN3NF06L Features
60V, 4A N-channel STripFET? II power MOSFET in a 4 pin SOT-223 package
Exceptional dv/dt capability
100% avalanche tested
Low threshold drive
Suitable for switching applications
STN3NF06L Applications
Industrial
Aerospace & defenseAppliancesBuilding automationElectronic point of sale (EPOS)Factory automation & controlGrid infrastructureIndustrial transport (non-car & non-light truck)LightingMedicalMotor drivesPower deliveryPro audio, video & signageTest & measurement
Enterprise systems
Data center & enterprise computingEnterprise machineEnterprise projectors
Personal electronics
Connected peripherals & printersData storageGamingHome theater & entertainmentMobile phonesPC & notebooksPortable electronicsTabletsTVWearables (non-medical)
STN3NF06L More Descriptions
N-channel 60 V, 0.07 Ohm typ., 4 A STripFET II Power MOSFET in SOT-223 package
Trans MOSFET N-CH 60V 4A Automotive 4-Pin(3 Tab) SOT-223 T/R
Mosfet, N-Ch, 60V, 4A, Sot-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Stmicroelectronics STN3NF06L
Transistor Polarity = N-Channel / Configuration = Dual Common Drain / Continuous Drain Current (Id) A = 4 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 16 / Fall Time ns = 10 / Rise Time ns = 25 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.3
Trans MOSFET N-CH 60V 4A Automotive 4-Pin(3 Tab) SOT-223 T/R
Mosfet, N-Ch, 60V, 4A, Sot-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Stmicroelectronics STN3NF06L
Transistor Polarity = N-Channel / Configuration = Dual Common Drain / Continuous Drain Current (Id) A = 4 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 16 / Fall Time ns = 10 / Rise Time ns = 25 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.3
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