STMicroelectronics STL50NH3LL
- Part Number:
- STL50NH3LL
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2483877-STL50NH3LL
- Description:
- MOSFET N-CH 30V 27A PWRFLAT6X5
- Datasheet:
- STL50NH3LL
STMicroelectronics STL50NH3LL technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STL50NH3LL.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance13mOhm
- Terminal FinishMatte Tin (Sn) - annealed
- Additional FeatureLOW THRESHOLD
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Current Rating27A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTL50
- Pin Count8
- JESD-30 CodeR-XDSO-N5
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max60W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation60W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs13m Ω @ 6.5A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds965pF @ 25V
- Current - Continuous Drain (Id) @ 25°C27A Tc
- Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
- Rise Time32ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)8.5 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)27A
- Gate to Source Voltage (Vgs)16V
- Drain Current-Max (Abs) (ID)13A
- Drain to Source Breakdown Voltage30V
- Avalanche Energy Rating (Eas)150 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STL50NH3LL Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 150 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 965pF @ 25V.This device has a continuous drain current (ID) of [27A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 13A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
STL50NH3LL Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
STL50NH3LL Applications
There are a lot of STMicroelectronics
STL50NH3LL applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 150 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 965pF @ 25V.This device has a continuous drain current (ID) of [27A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 13A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
STL50NH3LL Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
STL50NH3LL Applications
There are a lot of STMicroelectronics
STL50NH3LL applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
STL50NH3LL More Descriptions
Telecom Transformer 2CT:1/1.26 2CT:1/1.26 0.7Ohm/0.7Ohm Prim. DCR 16Term. Gull Wing SMD
Trans MOSFET N-CH 30V 27A 8-Pin Power Flat T/R
Power MOSFET Transistors N-Ch 30 Volt 27 Amp
Power Field-Effect Transistor, 13A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-channel 30V - 0.011Ohm - 13A - PowerFLAT (6x5)
MOSFET N-CH 30V 27A PWRFLAT6X5
Trans MOSFET N-CH 30V 27A 8-Pin Power Flat T/R
Power MOSFET Transistors N-Ch 30 Volt 27 Amp
Power Field-Effect Transistor, 13A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-channel 30V - 0.011Ohm - 13A - PowerFLAT (6x5)
MOSFET N-CH 30V 27A PWRFLAT6X5
The three parts on the right have similar specifications to STL50NH3LL.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)RoHS StatusLead FreeTurn On Delay TimeRadiation HardeningLifecycle StatusDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinPbfree CodeReach Compliance CodeThreshold VoltageREACH SVHCView Compare
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STL50NH3LLSurface MountSurface Mount8-PowerVDFN8SILICON-55°C~150°C TJTape & Reel (TR)STripFET™e3Obsolete1 (Unlimited)5EAR9913mOhmMatte Tin (Sn) - annealedLOW THRESHOLDFET General Purpose Power30VMOSFET (Metal Oxide)DUALNO LEAD26027A30STL508R-XDSO-N5Not Qualified1SINGLE WITH BUILT-IN DIODE60W TcENHANCEMENT MODE60WDRAINN-ChannelSWITCHING13m Ω @ 6.5A, 10V1V @ 250μA965pF @ 25V27A Tc12nC @ 4.5V32ns4.5V 10V±16V8.5 ns18 ns27A16V13A30V150 mJROHS3 CompliantLead Free------------
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Surface MountSurface Mount8-PowerVDFN8--55°C~150°C TJTape & Reel (TR)STripFET™ V-Obsolete1 (Unlimited)-EAR9914.5MOhm--FET General Purpose Power-MOSFET (Metal Oxide)-----STL51----Single62.5W Tc-62.5W-N-Channel-14.5m Ω @ 6.3A, 10V2.5V @ 250μA724pF @ 25V51A Tc5nC @ 4.5V4.2ns4.5V 10V±22V3.5 ns2.1 ns51A22V-30V-ROHS3 CompliantLead Free4 nsNo---------
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Surface MountSurface Mount8-PowerVDFN8SILICON-55°C~175°C TJCut Tape (CT)Automotive, AEC-Q101, STripFET™ H5-Discontinued1 (Unlimited)5EAR99-----MOSFET (Metal Oxide)DUALFLATNOT SPECIFIED-NOT SPECIFIEDSTL58-R-PDSO-F5-1SINGLE WITH BUILT-IN DIODE4.8W Ta 62.5W TcENHANCEMENT MODE-DRAINN-ChannelSWITCHING9m Ω @ 7.5A, 10V2.5V @ 250μA950pF @ 25V64A Tc10nC @ 4.5V-4.5V 10V22V, -20V--64A---150 mJROHS3 Compliant---ACTIVE (Last Updated: 8 months ago)30V0.0112Ohm224A30V----
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Surface MountSurface Mount8-PowerVDFN8SILICON-55°C~150°C TJTape & Reel (TR)STripFET™e3Obsolete1 (Unlimited)5EAR998.8mOhmMATTE TINLOW THRESHOLDFET General Purpose Power-MOSFET (Metal Oxide)DUALNO LEAD225-NOT SPECIFIEDSTL558R-PDSO-N5Not Qualified1SINGLE WITH BUILT-IN DIODE60W TcENHANCEMENT MODE60WDRAINN-ChannelSWITCHING8.8m Ω @ 7.5A, 10V2.5V @ 250μA965pF @ 25V55A Tc12nC @ 4.5V32ns4.5V 10V±16V8.5 ns18 ns55A16V15A30V150 mJROHS3 CompliantLead Free-----60A-yesunknown2.5VNo SVHC
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