STMicroelectronics STL130N8F7

Name: STL130N8F7
Brand: STMicroelectronics
SKU: 2484961-STL130N8F7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STL130N8F7

Manufacturer:: STMicroelectronics

Ventron No:: 2484961-STL130N8F7

Description:: MOSFET N-CH 80V POWERFLAT5X6

ECAD Model:

Datasheet:: STL130N8F7

Specifications

STMicroelectronics STL130N8F7 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STL130N8F7.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
DeepGATE™, STripFET™ VII
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
3.6mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
ULTRA LOW RESISTANCE
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Base Part Number
STL130
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
2
Power Dissipation-Max
135W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
5W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.6m Ω @ 13A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6340pF @ 40V
Current - Continuous Drain (Id) @ 25°C
130A Tc
Gate Charge (Qg) (Max) @ Vgs
96nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
123A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
80V
Pulsed Drain Current-Max (IDM)
560A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STL130N8F7 Description
STL130N8F7 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 80V. With an improved trench gate structure and STripFET F7 technology, this N-channel Power MOSFET has an extremely low on-state resistance and lower internal capacitance and gate charge for quicker and more effective switching.

STL130N8F7 Features
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness

STL130N8F7 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

STL130N8F7 More Descriptions

N-channel 80 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
Mosfet, N-Ch, 80V, 120A, 175Deg C, 135W Rohs Compliant: Yes |Stmicroelectronics STL130N8F7
Trans MOSFET N-CH 80V 120A 8-Pin Power Flat T/R
MOSFET N-Ch 80V 26A STripFET PowerFLAT8
Trans MOSFET N-CH 80V 123A PowerFlat T/RAvnet Japan
MOSFET N-CH 80V 4 mOhm 24A STripFET VII
Power Field-Effect Transistor, 130A I(D), 80V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power MOSFETs, 80V, 120A, PowerFLAT 5x6, Tape and ReelSTMicroelectronics SCT
N-CH 80V 130A 3,6mOhm PFLAT5x6

Product Comparison

The three parts on the right have similar specifications to STL130N8F7.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Base Part Number

JESD-30 Code

Number of Elements

Configuration

Number of Channels

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Radiation Hardening

RoHS Status

Lead Free

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

Factory Lead Time

Pbfree Code

Subcategory

Pin Count

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Avalanche Energy Rating (Eas)

View Compare
STL130N8F7

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

Surface Mount

Surface Mount

8-PowerVDFN

8

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

DeepGATE™, STripFET™ VII

e3

Active

1 (Unlimited)

5

EAR99

3.6mOhm

Matte Tin (Sn) - annealed

ULTRA LOW RESISTANCE

MOSFET (Metal Oxide)

DUAL

FLAT

260

STL130

R-PDSO-F5

1

SINGLE WITH BUILT-IN DIODE

2

135W Tc

ENHANCEMENT MODE

5W

DRAIN

N-Channel

SWITCHING

3.6m Ω @ 13A, 10V

4.5V @ 250μA

6340pF @ 40V

130A Tc

96nC @ 10V

10V

±20V

123A

20V

80V

560A

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
STL160NS3LLH7

STMicroelectronics

-

Surface Mount

Surface Mount

8-PowerVDFN

8

-

-55°C~150°C TJ

Cut Tape (CT)

DeepGATE™, STripFET™ VII

-

Obsolete

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

STL160

-

1

-

-

84W Tc

-

100W

-

N-Channel

-

2.1m Ω @ 18A, 10V

2.3V @ 1mA

3245pF @ 25V

160A Tc

20nC @ 4.5V

4.5V 10V

±20V

160A

20V

-

-

-

ROHS3 Compliant

Lead Free

NOT SPECIFIED

30V

-

-

-

-

-

-

-

-

STL130N8F7 vs STL160NS3LLH7
STL12N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

Surface Mount

Surface Mount

8-PowerVDFN

8

-

-55°C~150°C TJ

Cut Tape (CT)

MDmesh™ M2

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

STL12

-

-

-

-

52W Tc

-

-

-

N-Channel

-

495m Ω @ 4.5A, 10V

4V @ 250μA

538pF @ 100V

6.5A Tc

16nC @ 10V

10V

±25V

6.5A

-

-

-

-

ROHS3 Compliant

-

NOT SPECIFIED

600V

26 Weeks

-

-

-

-

-

-

-

STL130N8F7 vs STL12N60M2
STL18N55M5

STMicroelectronics

-

Surface Mount

Surface Mount

8-PowerVDFN

4

SILICON

150°C TJ

Tape & Reel (TR)

MDmesh™ V

e3

Obsolete

3 (168 Hours)

4

EAR99

270MOhm

Matte Tin (Sn) - annealed

-

MOSFET (Metal Oxide)

SINGLE

-

260

STL18

-

1

SINGLE WITH BUILT-IN DIODE

-

3W Ta 90W Tc

ENHANCEMENT MODE

3W

DRAIN

N-Channel

SWITCHING

270m Ω @ 6A, 10V

5V @ 250μA

1352pF @ 100V

2.4A Ta 13A Tc

31nC @ 10V

10V

±25V

13A

25V

550V

9.6A

No

ROHS3 Compliant

Lead Free

-

-

-

yes

FET General Purpose Power

4

9.5ns

13 ns

23 ns

200 mJ

STL130N8F7 vs STL18N55M5