STI15NM60N

STMicroelectronics STI15NM60N

Part Number:
STI15NM60N
Manufacturer:
STMicroelectronics
Ventron No:
3554441-STI15NM60N
Description:
MOSFET N-CH 600V 14A I2PAK
ECAD Model:
Datasheet:
STI15NM60N

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Specifications
STMicroelectronics STI15NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STI15NM60N.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™ II
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    MATTE TIN
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    245
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    STI15N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    125W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    125W
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    299m Ω @ 7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1250pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    37nC @ 10V
  • Rise Time
    14ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    30 ns
  • Turn-Off Delay Time
    80 ns
  • Continuous Drain Current (ID)
    14A
  • Gate to Source Voltage (Vgs)
    25V
  • Drain-source On Resistance-Max
    0.299Ohm
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    56A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
STI15NM60N Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1250pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 14A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [80 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 56A.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STI15NM60N Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 56A.


STI15NM60N Applications
There are a lot of STMicroelectronics
STI15NM60N applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
STI15NM60N More Descriptions
N-channel 600V - 0.27Ohm - 13A - D2/I2PAK - TO-220/FP - TO-247
Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET N CH 14A 600V I2PAK TO262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:600V; Cont Current Id:7A; On State Resistance:270mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:I2PAK; Termination Type:Through Hole; Operating Temperature Range:-55°C to 150°C
Product Comparison
The three parts on the right have similar specifications to STI15NM60N.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    RoHS Status
    ECCN Code
    JESD-30 Code
    Avalanche Energy Rating (Eas)
    Terminal Position
    Reach Compliance Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Pbfree Code
    Threshold Voltage
    Height
    Length
    Width
    REACH SVHC
    View Compare
  • STI15NM60N
    STI15NM60N
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    e3
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    FET General Purpose Power
    MOSFET (Metal Oxide)
    245
    40
    STI15N
    3
    1
    125W Tc
    Single
    ENHANCEMENT MODE
    125W
    12 ns
    N-Channel
    SWITCHING
    299m Ω @ 7A, 10V
    4V @ 250μA
    1250pF @ 50V
    14A Tc
    37nC @ 10V
    14ns
    10V
    ±25V
    30 ns
    80 ns
    14A
    25V
    0.299Ohm
    600V
    56A
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STI17NF25
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    SILICON
    -55°C~150°C TJ
    Tube
    STripFET™ II
    e3
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    FET General Purpose Power
    MOSFET (Metal Oxide)
    245
    40
    STI17N
    3
    1
    90W Tc
    Single
    ENHANCEMENT MODE
    90W
    8.8 ns
    N-Channel
    SWITCHING
    165m Ω @ 8.5A, 10V
    4V @ 250μA
    1000pF @ 25V
    17A Tc
    29.5nC @ 10V
    17.2ns
    10V
    ±20V
    8.8 ns
    21 ns
    17A
    20V
    0.165Ohm
    250V
    68A
    No
    ROHS3 Compliant
    EAR99
    R-PSIP-T3
    100 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STI18NM60N
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    e3
    Obsolete
    1 (Unlimited)
    3
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    STI18N
    3
    1
    110W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    285m Ω @ 6.5A, 10V
    4V @ 250μA
    1000pF @ 50V
    13A Tc
    35nC @ 10V
    -
    10V
    ±25V
    -
    -
    13A
    -
    0.285Ohm
    -
    52A
    -
    ROHS3 Compliant
    -
    -
    -
    SINGLE
    not_compliant
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    600V
    600V
    -
    -
    -
    -
    -
    -
  • STI12N65M5
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    SILICON
    150°C TJ
    Tube
    MDmesh™ V
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    STI12N
    3
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    22.6 ns
    N-Channel
    SWITCHING
    430m Ω @ 4.3A, 10V
    5V @ 250μA
    900pF @ 100V
    8.5A Tc
    22nC @ 10V
    17.6ns
    10V
    ±25V
    15.6 ns
    15.6 ns
    8.5A
    25V
    -
    650V
    -
    No
    ROHS3 Compliant
    EAR99
    -
    150 mJ
    -
    -
    -
    -
    -
    -
    yes
    4V
    9.35mm
    10.4mm
    4.6mm
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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