STMicroelectronics STI15NM60N
- Part Number:
- STI15NM60N
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3554441-STI15NM60N
- Description:
- MOSFET N-CH 600V 14A I2PAK
- Datasheet:
- STI15NM60N
STMicroelectronics STI15NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STI15NM60N.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMDmesh™ II
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)245
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberSTI15N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation125W
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs299m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1250pF @ 50V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
- Rise Time14ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time80 ns
- Continuous Drain Current (ID)14A
- Gate to Source Voltage (Vgs)25V
- Drain-source On Resistance-Max0.299Ohm
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)56A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STI15NM60N Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1250pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 14A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [80 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 56A.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STI15NM60N Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 56A.
STI15NM60N Applications
There are a lot of STMicroelectronics
STI15NM60N applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1250pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 14A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [80 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 56A.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STI15NM60N Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 56A.
STI15NM60N Applications
There are a lot of STMicroelectronics
STI15NM60N applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
STI15NM60N More Descriptions
N-channel 600V - 0.27Ohm - 13A - D2/I2PAK - TO-220/FP - TO-247
Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET N CH 14A 600V I2PAK TO262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:600V; Cont Current Id:7A; On State Resistance:270mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:I2PAK; Termination Type:Through Hole; Operating Temperature Range:-55°C to 150°C
Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET N CH 14A 600V I2PAK TO262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:600V; Cont Current Id:7A; On State Resistance:270mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:I2PAK; Termination Type:Through Hole; Operating Temperature Range:-55°C to 150°C
The three parts on the right have similar specifications to STI15NM60N.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Radiation HardeningRoHS StatusECCN CodeJESD-30 CodeAvalanche Energy Rating (Eas)Terminal PositionReach Compliance CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinPbfree CodeThreshold VoltageHeightLengthWidthREACH SVHCView Compare
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STI15NM60NThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON-55°C~150°C TJTubeMDmesh™ IIe3Obsolete1 (Unlimited)3MATTE TINFET General Purpose PowerMOSFET (Metal Oxide)24540STI15N31125W TcSingleENHANCEMENT MODE125W12 nsN-ChannelSWITCHING299m Ω @ 7A, 10V4V @ 250μA1250pF @ 50V14A Tc37nC @ 10V14ns10V±25V30 ns80 ns14A25V0.299Ohm600V56ANoROHS3 Compliant----------------
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-SILICON-55°C~150°C TJTubeSTripFET™ IIe3Obsolete1 (Unlimited)3MATTE TINFET General Purpose PowerMOSFET (Metal Oxide)24540STI17N3190W TcSingleENHANCEMENT MODE90W8.8 nsN-ChannelSWITCHING165m Ω @ 8.5A, 10V4V @ 250μA1000pF @ 25V17A Tc29.5nC @ 10V17.2ns10V±20V8.8 ns21 ns17A20V0.165Ohm250V68ANoROHS3 CompliantEAR99R-PSIP-T3100 mJ------------
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON-55°C~150°C TJTubeMDmesh™ IIe3Obsolete1 (Unlimited)3Matte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTI18N31110W Tc-ENHANCEMENT MODE--N-ChannelSWITCHING285m Ω @ 6.5A, 10V4V @ 250μA1000pF @ 50V13A Tc35nC @ 10V-10V±25V--13A-0.285Ohm-52A-ROHS3 Compliant---SINGLEnot_compliantNot QualifiedSINGLE WITH BUILT-IN DIODE600V600V------
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON150°C TJTubeMDmesh™ Ve3Obsolete1 (Unlimited)3Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)--STI12N3170W TcSingleENHANCEMENT MODE70W22.6 nsN-ChannelSWITCHING430m Ω @ 4.3A, 10V5V @ 250μA900pF @ 100V8.5A Tc22nC @ 10V17.6ns10V±25V15.6 ns15.6 ns8.5A25V-650V-NoROHS3 CompliantEAR99-150 mJ------yes4V9.35mm10.4mm4.6mmNo SVHC
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