STMicroelectronics STF2HNK60Z

Name: STF2HNK60Z
Brand: STMicroelectronics
SKU: 2478403-STF2HNK60Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STF2HNK60Z

Manufacturer:: STMicroelectronics

Ventron No:: 2478403-STF2HNK60Z

Description:: MOSFET N-CH 600V 2A TO-220FP

ECAD Model:

Datasheet:: STF2HNK60Z

Specifications

STMicroelectronics STF2HNK60Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF2HNK60Z.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
4.8Ohm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STF2HN
Pin Count
3
Number of Elements
1
Power Dissipation-Max
20W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
20W
Case Connection
ISOLATED
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.8 Ω @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
280pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2A Tc
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
50 ns
Turn-Off Delay Time
13 ns
Continuous Drain Current (ID)
1A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
2A
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
8A
Height
16.4mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STF2HNK60Z Description
The high-voltage STF2HNK60Z is a Zener-protected N-channel Power MOSFET developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of DV/DT capability for the most demanding applications.

STF2HNK60Z Features
Extremely high DV/DT capability
100% avalanche tested
Gate charge minimized
Zener-protected

STF2HNK60Z Applications
General-purpose amplifier
Switching applications
Power management
Industrial

STF2HNK60Z More Descriptions

N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
Trans MOSFET N-CH 600V 2A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 2A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 2A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 4.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 20W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 2A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STF2HNK60Z.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Terminal Position

Configuration

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

JESD-30 Code

View Compare
STF2HNK60Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

4.8Ohm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STF2HN

3

1

20W Tc

Single

ENHANCEMENT MODE

20W

ISOLATED

10 ns

N-Channel

SWITCHING

4.8 Ω @ 1A, 10V

4.5V @ 50μA

280pF @ 25V

2A Tc

15nC @ 10V

30ns

10V

±30V

50 ns

13 ns

1A

3.75V

TO-220AB

30V

2A

600V

8A

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
STF26NM60N-H

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Obsolete

1 (Unlimited)

3

-

-

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STF26

3

1

30W Tc

-

ENHANCEMENT MODE

30W

ISOLATED

13 ns

N-Channel

SWITCHING

165m Ω @ 10A, 10V

4V @ 250μA

1800pF @ 50V

20A Tc

60nC @ 10V

25ns

10V

±25V

50 ns

85 ns

20A

-

TO-220AB

25V

-

600V

80A

-

-

-

-

No

ROHS3 Compliant

-

yes

SINGLE

SINGLE WITH BUILT-IN DIODE

0.165Ohm

610 mJ

-

-

-

-

STF2HNK60Z vs STF26NM60N-H
STF23NM60ND

STMicroelectronics

-

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

150°C TJ

Tube

FDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STF23

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

ISOLATED

21 ns

N-Channel

SWITCHING

180m Ω @ 10A, 10V

5V @ 250μA

2050pF @ 50V

19.5A Tc

70nC @ 10V

45ns

10V

±25V

40 ns

90 ns

19.5A

4V

TO-220AB

25V

-

600V

78A

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

700 mJ

-

-

-

-

STF2HNK60Z vs STF23NM60ND
STF20NF06

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3 Full Pack

-

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

-

TIN

FET General Purpose Power

MOSFET (Metal Oxide)

STF20

3

1

28W Tc

Single

ENHANCEMENT MODE

60W

ISOLATED

5 ns

N-Channel

SWITCHING

70m Ω @ 10A, 10V

4V @ 250μA

400pF @ 25V

20A Tc

18nC @ 10V

15ns

10V

±20V

5 ns

15 ns

20A

-

TO-220AB

20V

-

60V

80A

-

-

-

-

No

ROHS3 Compliant

Lead Free

yes

-

-

0.07Ohm

120 mJ

60V

245

20A

R-PSFM-T3

STF2HNK60Z vs STF20NF06