STMicroelectronics STF26NM60N

Name: STF26NM60N
Brand: STMicroelectronics
SKU: 2848919-STF26NM60N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STF26NM60N

Manufacturer:: STMicroelectronics

Ventron No:: 2848919-STF26NM60N

Description:: MOSFET N-CH 600V 20A TO-220F

ECAD Model:

Datasheet:: STF26NM60N

Specifications

STMicroelectronics STF26NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF26NM60N.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STF26
Pin Count
3
Number of Elements
1
Power Dissipation-Max
35W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
30W
Case Connection
ISOLATED
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
165m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1800pF @ 50V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Rise Time
25ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
50 ns
Turn-Off Delay Time
85 ns
Continuous Drain Current (ID)
10A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
20A
Pulsed Drain Current-Max (IDM)
80A
DS Breakdown Voltage-Min
600V
Nominal Vgs
3 V
Height
16.4mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STF26NM60N Description
STF26NM60N is an N-channel Power MOSFET designed with MDmeshTM technology's second generation. This ground-breaking Power MOSFET combines a vertical structure with the company's strip layout to provide one of the lowest on-resistance and gate charges in the world. As a result, it is appropriate for the most demanding high-efficiency converters.

STF26NM60N Features
100% avalanche tested
Low gate input resistance
Low input capacitance and gate charge

STF26NM60N Applications
Switching applications

STF26NM60N More Descriptions

N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-220FP package
N-Channel 600 V 165 mO 60 nC Flange Mount MDmesh II Mosfet - TO-220FP
Trans MOSFET N-CH 600V 20A 3-Pin(3 Tab) TO-220FP Tube
Mosfet, N Ch, 600V, 20A, To220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Stmicroelectronics STF26NM60N
Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STF26NM60N.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Terminal Position

Configuration

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Drain to Source Breakdown Voltage

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Threshold Voltage

View Compare
STF26NM60N

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STF26

3

1

35W Tc

Single

ENHANCEMENT MODE

30W

ISOLATED

13 ns

N-Channel

SWITCHING

165m Ω @ 10A, 10V

4V @ 250μA

1800pF @ 50V

20A Tc

60nC @ 10V

25ns

600V

10V

±30V

50 ns

85 ns

10A

TO-220AB

25V

20A

80A

600V

3 V

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
STF20NM60D

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-65°C~150°C TJ

Tube

FDmesh™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STF20

4

1

45W Tc

-

ENHANCEMENT MODE

45W

ISOLATED

25 ns

N-Channel

SWITCHING

290m Ω @ 10A, 10V

5V @ 250μA

1300pF @ 25V

20A Tc

37nC @ 10V

12ns

600V

10V

±30V

22 ns

-

20A

TO-220AB

30V

-

80A

600V

-

-

-

-

-

No

ROHS3 Compliant

-

yes

SINGLE

SINGLE WITH BUILT-IN DIODE

0.29Ohm

700 mJ

-

-

-

-

STF26NM60N vs STF20NM60D
STF26NM60N-H

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Obsolete

1 (Unlimited)

3

-

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STF26

3

1

30W Tc

-

ENHANCEMENT MODE

30W

ISOLATED

13 ns

N-Channel

SWITCHING

165m Ω @ 10A, 10V

4V @ 250μA

1800pF @ 50V

20A Tc

60nC @ 10V

25ns

-

10V

±25V

50 ns

85 ns

20A

TO-220AB

25V

-

80A

-

-

-

-

-

-

No

ROHS3 Compliant

-

yes

SINGLE

SINGLE WITH BUILT-IN DIODE

0.165Ohm

610 mJ

600V

-

-

-

STF26NM60N vs STF26NM60N-H
STF28N60DM2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

17 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

-55°C~150°C TJ

Tube

MDmesh™ DM2

-

Active

1 (Unlimited)

-

EAR99

-

-

MOSFET (Metal Oxide)

STF28

-

-

30W Tc

-

-

-

-

-

N-Channel

-

160m Ω @ 10.5A, 10V

5V @ 250μA

1500pF @ 100V

21A Tc

34nC @ 10V

-

600V

10V

±25V

-

-

21A

-

-

-

-

-

-

-

-

-

No SVHC

-

ROHS3 Compliant

-

-

-

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

4V

STF26NM60N vs STF28N60DM2