STF25NM60ND

STMicroelectronics STF25NM60ND

Part Number:
STF25NM60ND
Manufacturer:
STMicroelectronics
Ventron No:
2485656-STF25NM60ND
Description:
MOSFET N-CH 600V 21A TO-220FP
ECAD Model:
Datasheet:
STF25NM60ND

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Specifications
STMicroelectronics STF25NM60ND technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF25NM60ND.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Series
    FDmesh™ II
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STF25
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    40W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    40W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    60 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    160m Ω @ 10.5A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2400pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    21A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    80nC @ 10V
  • Rise Time
    30ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    40 ns
  • Turn-Off Delay Time
    50 ns
  • Continuous Drain Current (ID)
    21A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    84A
  • Avalanche Energy Rating (Eas)
    850 mJ
  • Height
    16.4mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
STF25NM60ND Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 850 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2400pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 21A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.Peak drain current for this device is 84A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 60 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

STF25NM60ND Features
the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 84A.
a threshold voltage of 4V


STF25NM60ND Applications
There are a lot of STMicroelectronics
STF25NM60ND applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
STF25NM60ND More Descriptions
Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
MOSFET N-CH 600V 21A TO-220FP / Trans MOSFET N-CH 600V 21A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 21A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 40W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
Product Comparison
The three parts on the right have similar specifications to STF25NM60ND.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Voltage - Rated DC
    Current Rating
    Lifecycle Status
    Factory Lead Time
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Lead Free
    View Compare
  • STF25NM60ND
    STF25NM60ND
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    150°C TJ
    Tube
    FDmesh™ II
    Obsolete
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STF25
    3
    1
    40W Tc
    Single
    ENHANCEMENT MODE
    40W
    ISOLATED
    60 ns
    N-Channel
    SWITCHING
    160m Ω @ 10.5A, 10V
    5V @ 250μA
    2400pF @ 50V
    21A Tc
    80nC @ 10V
    30ns
    10V
    ±25V
    40 ns
    50 ns
    21A
    4V
    TO-220AB
    25V
    600V
    84A
    850 mJ
    16.4mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STF20N20
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    STripFET™ II
    Obsolete
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STF20
    3
    1
    25W Tc
    Single
    ENHANCEMENT MODE
    25W
    ISOLATED
    15 ns
    N-Channel
    SWITCHING
    125m Ω @ 10A, 10V
    4V @ 250μA
    940pF @ 25V
    18A Ta
    39nC @ 10V
    30ns
    10V
    ±20V
    10 ns
    40 ns
    18A
    -
    TO-220AB
    20V
    200V
    72A
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    e3
    yes
    TIN
    200V
    18A
    -
    -
    -
    -
    -
    -
  • STF23N80K5
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -55°C~150°C TJ
    Tube
    MDmesh™ K5
    Active
    1 (Unlimited)
    -
    EAR99
    -
    MOSFET (Metal Oxide)
    STF23
    -
    -
    35W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    280m Ω @ 8A, 10V
    5V @ 100μA
    1000pF @ 100V
    16A Tc
    33nC @ 10V
    -
    10V
    ±30V
    -
    -
    16A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 2 weeks ago)
    17 Weeks
    NOT SPECIFIED
    NOT SPECIFIED
    800V
    Lead Free
  • STF23NM60ND
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    150°C TJ
    Tube
    FDmesh™ II
    Active
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STF23
    3
    1
    35W Tc
    Single
    ENHANCEMENT MODE
    35W
    ISOLATED
    21 ns
    N-Channel
    SWITCHING
    180m Ω @ 10A, 10V
    5V @ 250μA
    2050pF @ 50V
    19.5A Tc
    70nC @ 10V
    45ns
    10V
    ±25V
    40 ns
    90 ns
    19.5A
    4V
    TO-220AB
    25V
    600V
    78A
    700 mJ
    16.4mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    e3
    -
    Matte Tin (Sn) - annealed
    -
    -
    -
    16 Weeks
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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