STMicroelectronics STF25NM60ND
- Part Number:
- STF25NM60ND
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2485656-STF25NM60ND
- Description:
- MOSFET N-CH 600V 21A TO-220FP
- Datasheet:
- STF25NM60ND
STMicroelectronics STF25NM60ND technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF25NM60ND.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- SeriesFDmesh™ II
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTF25
- Pin Count3
- Number of Elements1
- Power Dissipation-Max40W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation40W
- Case ConnectionISOLATED
- Turn On Delay Time60 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs160m Ω @ 10.5A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2400pF @ 50V
- Current - Continuous Drain (Id) @ 25°C21A Tc
- Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
- Rise Time30ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)40 ns
- Turn-Off Delay Time50 ns
- Continuous Drain Current (ID)21A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)84A
- Avalanche Energy Rating (Eas)850 mJ
- Height16.4mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STF25NM60ND Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 850 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2400pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 21A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.Peak drain current for this device is 84A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 60 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
STF25NM60ND Features
the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 84A.
a threshold voltage of 4V
STF25NM60ND Applications
There are a lot of STMicroelectronics
STF25NM60ND applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 850 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2400pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 21A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.Peak drain current for this device is 84A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 60 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
STF25NM60ND Features
the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 84A.
a threshold voltage of 4V
STF25NM60ND Applications
There are a lot of STMicroelectronics
STF25NM60ND applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
STF25NM60ND More Descriptions
Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
MOSFET N-CH 600V 21A TO-220FP / Trans MOSFET N-CH 600V 21A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 21A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 40W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
MOSFET N-CH 600V 21A TO-220FP / Trans MOSFET N-CH 600V 21A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 21A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 40W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
The three parts on the right have similar specifications to STF25NM60ND.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusJESD-609 CodePbfree CodeTerminal FinishVoltage - Rated DCCurrent RatingLifecycle StatusFactory Lead TimePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)Lead FreeView Compare
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STF25NM60NDThrough HoleThrough HoleTO-220-3 Full Pack3SILICON150°C TJTubeFDmesh™ IIObsolete1 (Unlimited)3EAR99FET General Purpose PowerMOSFET (Metal Oxide)STF253140W TcSingleENHANCEMENT MODE40WISOLATED60 nsN-ChannelSWITCHING160m Ω @ 10.5A, 10V5V @ 250μA2400pF @ 50V21A Tc80nC @ 10V30ns10V±25V40 ns50 ns21A4VTO-220AB25V600V84A850 mJ16.4mm10.4mm4.6mmNo SVHCNoROHS3 Compliant------------
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Through HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeSTripFET™ IIObsolete1 (Unlimited)3EAR99FET General Purpose PowerMOSFET (Metal Oxide)STF203125W TcSingleENHANCEMENT MODE25WISOLATED15 nsN-ChannelSWITCHING125m Ω @ 10A, 10V4V @ 250μA940pF @ 25V18A Ta39nC @ 10V30ns10V±20V10 ns40 ns18A-TO-220AB20V200V72A-----NoROHS3 Compliante3yesTIN200V18A------
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Through HoleThrough HoleTO-220-3 Full Pack---55°C~150°C TJTubeMDmesh™ K5Active1 (Unlimited)-EAR99-MOSFET (Metal Oxide)STF23--35W Tc-----N-Channel-280m Ω @ 8A, 10V5V @ 100μA1000pF @ 100V16A Tc33nC @ 10V-10V±30V--16A-----------ROHS3 Compliant-----ACTIVE (Last Updated: 2 weeks ago)17 WeeksNOT SPECIFIEDNOT SPECIFIED800VLead Free
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Through HoleThrough HoleTO-220-3 Full Pack3SILICON150°C TJTubeFDmesh™ IIActive1 (Unlimited)3EAR99FET General Purpose PowerMOSFET (Metal Oxide)STF233135W TcSingleENHANCEMENT MODE35WISOLATED21 nsN-ChannelSWITCHING180m Ω @ 10A, 10V5V @ 250μA2050pF @ 50V19.5A Tc70nC @ 10V45ns10V±25V40 ns90 ns19.5A4VTO-220AB25V600V78A700 mJ16.4mm10.4mm4.6mmNo SVHCNoROHS3 Compliante3-Matte Tin (Sn) - annealed---16 Weeks----
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