STMicroelectronics STF19NF20
- Part Number:
- STF19NF20
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2482984-STF19NF20
- Description:
- MOSFET N-CH 200V 15A TO-220FP
- ECAD Model:
-
- Datasheet:
- STF19NF20
STMicroelectronics STF19NF20 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF19NF20.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMESH OVERLAY™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTF19
- Pin Count3
- Number of Elements1
- Power Dissipation-Max25W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation25W
- Turn On Delay Time11.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs160m Ω @ 7.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C15A Tc
- Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
- Rise Time22ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time19 ns
- Continuous Drain Current (ID)7.5A
- Threshold Voltage3V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage200V
- Pulsed Drain Current-Max (IDM)60A
- Height16.4mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STF19NF20 Description
STF19NF20 is a type of N-channel power MOSFET which is provided by STMicroelectronics based on its consolidated strip-layout-based MESH OVERLAY? process. STF19NF20 is capable of delivering extremely high dv/dt capability, low gate charge, and low intrinsic capacitance, thus it is well suited for a wide range of switching applications.
STF19NF20 Features
Extremely high dv/dt capability
Low gate charge
Low intrinsic capacitance
Available in the TO-220FP package
Consolidated strip-layout-based MESH OVERLAY? process
STF19NF20 Applications
Switching applications
STF19NF20 is a type of N-channel power MOSFET which is provided by STMicroelectronics based on its consolidated strip-layout-based MESH OVERLAY? process. STF19NF20 is capable of delivering extremely high dv/dt capability, low gate charge, and low intrinsic capacitance, thus it is well suited for a wide range of switching applications.
STF19NF20 Features
Extremely high dv/dt capability
Low gate charge
Low intrinsic capacitance
Available in the TO-220FP package
Consolidated strip-layout-based MESH OVERLAY? process
STF19NF20 Applications
Switching applications
STF19NF20 More Descriptions
N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220FP package
Trans MOSFET N-CH 200V 15A 3-Pin(3 Tab) TO-220FP Tube
STF Series 200 V 15 A 0.16 Ohm Through Hole N-Ch Power MOSFET - TO-220FPAB
Mosfet, N Channel, 200V, 15A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STF19NF20
Power Field-Effect Transistor, 15A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans MOSFET N-CH 200V 15A 3-Pin(3 Tab) TO-220FP Tube
STF Series 200 V 15 A 0.16 Ohm Through Hole N-Ch Power MOSFET - TO-220FPAB
Mosfet, N Channel, 200V, 15A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STF19NF20
Power Field-Effect Transistor, 15A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STF19NF20.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusTerminationResistanceVoltage - Rated DCPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusCase ConnectionDual Supply VoltageNominal VgsLead FreeView Compare
-
STF19NF20ACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeMESH OVERLAY™e3Active1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STF193125W TcSingleENHANCEMENT MODE25W11.5 nsN-ChannelSWITCHING160m Ω @ 7.5A, 10V4V @ 250μA800pF @ 25V15A Tc24nC @ 10V22ns10V±20V11 ns19 ns7.5A3VTO-220AB20V200V60A16.4mm10.4mm4.6mmNo SVHCNoROHS3 Compliant------------- -
--Through HoleThrough HoleTO-220-3 Full Pack3SILICON150°C TJTubeMDmesh™ IIe3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)STF123125W TcSingleENHANCEMENT MODE25W-N-ChannelSWITCHING380m Ω @ 5.5A, 10V4V @ 250μA940pF @ 50V11A Tc30nC @ 10V15ns10V±25V14 ns60 ns11A-TO-220AB25V500V44A---No SVHC-ROHS3 CompliantThrough Hole380mOhm500VNOT SPECIFIEDnot_compliant11ANOT SPECIFIEDNot QualifiedISOLATED500V3 VLead Free
-
-40 WeeksThrough HoleThrough HoleTO-220-3 Full Pack---Tube--Active1 (Unlimited)-----STF12------------------------------ROHS3 Compliant-----------Lead Free
-
-17 WeeksThrough HoleThrough HoleTO-220-5 Full Pack3SILICON150°C TJTubeMDmesh™ Ve3Active1 (Unlimited)3EAR99Matte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)STF123125W TcSingleENHANCEMENT MODE25W22.6 nsN-ChannelSWITCHING430m Ω @ 4.3A, 10V5V @ 250μA900pF @ 100V8.5A Tc22nC @ 10V9.5ns10V±25V24 ns15.6 ns8.5A4VTO-220AB25V650V-16.4mm10.4mm4.6mmNo SVHCNoROHS3 Compliant-430mOhm------ISOLATED--Lead Free
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
19 January 2024
The Best Tutorial for ISO3082DWR
Ⅰ. Overview of ISO3082DWRⅡ. Technical parameters of ISO3082DWRⅢ. What are the characteristics of ISO3082DWR?Ⅳ. How does ISO3082DWR work?Ⅴ. ISO3082DWR symbol, footprint and pin configurationⅥ. Layout principles of ISO3082DWRⅦ.... -
22 January 2024
What You Need to Know About the MMBT3904 Transistor
Ⅰ. MMBT3904 descriptionⅡ. What is the pin configuration of MMBT3904?Ⅲ. Specifications of MMBT3904Ⅳ. Typical circuit schematic of MMBT3904Ⅴ. Where is MMBT3904 used?Ⅵ. Absolute maximum ratings of MMBT3904Ⅶ. What... -
22 January 2024
LM317T Voltage Regulator: Functions, Usage, Applications and LM317T vs LM317
Ⅰ. Overview of LM317TⅡ. What functions does LM317T have?Ⅲ. Technical parameters of LM317T voltage regulatorⅣ. Circuit of LM317T voltage regulatorⅤ. What is the difference between LM317T and LM317?Ⅵ.... -
23 January 2024
IRF3205 MOSFET Specifications, Package, Working Principle and Applications
Ⅰ. Overview of IRF3205 MOSFETⅡ. Symbol, footprint and pin configuration of IRF3205 MOSFETⅢ. Specifications of IRF3205 MOSFETⅣ. Package of IRF3205 MOSFETⅤ. Working principle and structure of IRF3205 MOSFETⅥ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.