STMicroelectronics STF13NK50Z

Name: STF13NK50Z
Brand: STMicroelectronics
SKU: 3070455-STF13NK50Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STF13NK50Z

Manufacturer:: STMicroelectronics

Ventron No:: 3070455-STF13NK50Z

Description:: MOSFET N-CH 500V 11A TO-220FP

ECAD Model:

Datasheet:: STF13NK50Z

Specifications

STMicroelectronics STF13NK50Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF13NK50Z.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STF13
Pin Count
3
Number of Elements
1
Power Dissipation-Max
30W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
30W
Case Connection
ISOLATED
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
480m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
47nC @ 10V
Rise Time
23ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
24 ns
Turn-Off Delay Time
61 ns
Continuous Drain Current (ID)
6.5A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
11A
Drain-source On Resistance-Max
0.48Ohm
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
44A
Dual Supply Voltage
500V
Avalanche Energy Rating (Eas)
240 mJ
Nominal Vgs
3.75 V
Height
16.4mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

STF13NK50Z Description
The SuperMESH series is obtained through an extreme optimization of ST's well-established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure an excellent dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs.

STF13NK50Z Features
Gate charge minimized
100% avalanche tested
Very low intrinsic capacitances
Extremely high dv/dt capability
Excellent manufacturing repeatability

STF13NK50Z Applications
Automotive
Personal electronics
Communications equipment

STF13NK50Z More Descriptions

N-channel 500 V, 0.4 Ohm, 11 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
Trans MOSFET N-CH 500V 11A 3-Pin(3 Tab) TO-220FP Tube
500V 11A 30W 480m´Î@10V6.5A 4.5V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Power Field-Effect Transistor, 11A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 500V, 11A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:11A; Package / Case:TO-220FP; Power Dissipation Pd:30W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to STF13NK50Z.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Terminal Finish

Terminal Position

Configuration

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Resistance

Threshold Voltage

View Compare
STF13NK50Z

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

Active

1 (Unlimited)

3

Through Hole

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STF13

3

1

30W Tc

Single

ENHANCEMENT MODE

30W

ISOLATED

18 ns

N-Channel

SWITCHING

480m Ω @ 6.5A, 10V

4.5V @ 100μA

1600pF @ 25V

11A Tc

47nC @ 10V

23ns

10V

±30V

24 ns

61 ns

6.5A

TO-220AB

30V

11A

0.48Ohm

500V

44A

500V

240 mJ

3.75 V

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-
STF12NM65

STMicroelectronics

-

40 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

-

-

-

Tube

-

Active

1 (Unlimited)

-

-

-

-

-

STF12

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

STF13NK50Z vs STF12NM65
STF12NM50ND

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

150°C TJ

Tube

FDmesh™ II

Obsolete

1 (Unlimited)

3

-

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STF12

3

1

25W Tc

-

ENHANCEMENT MODE

25W

ISOLATED

12 ns

N-Channel

SWITCHING

380m Ω @ 5.5A, 10V

5V @ 250μA

850pF @ 50V

11A Tc

30nC @ 10V

15ns

10V

±25V

17 ns

40 ns

11A

TO-220AB

25V

-

-

-

44A

-

-

-

-

-

-

-

No

ROHS3 Compliant

-

e3

Matte Tin (Sn) - annealed

SINGLE

SINGLE

500V

500V

-

-

STF13NK50Z vs STF12NM50ND
STF11NM50N

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

150°C TJ

Tube

MDmesh™ II

Active

1 (Unlimited)

3

-

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STF11

3

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

8 ns

N-Channel

SWITCHING

470m Ω @ 4.5A, 10V

4V @ 250μA

547pF @ 50V

8.5A Tc

19nC @ 10V

10ns

10V

±25V

10 ns

33 ns

8.5A

TO-220AB

25V

9A

-

500V

-

-

-

-

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

e3

Matte Tin (Sn) - annealed

-

-

-

-

470MOhm

3V

STF13NK50Z vs STF11NM50N