STMicroelectronics STF12NM60N
- Part Number:
- STF12NM60N
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3070921-STF12NM60N
- Description:
- MOSFET N-CH 600V 10A TO-220FP
- Datasheet:
- STx12NM60N(-1)
STMicroelectronics STF12NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF12NM60N.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMDmesh™ II
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Resistance410mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTF12
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max25W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation25W
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs410m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds960pF @ 50V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs30.5nC @ 10V
- Rise Time9ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time60 ns
- Continuous Drain Current (ID)10A
- Threshold Voltage3V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)40A
- Dual Supply Voltage600V
- Avalanche Energy Rating (Eas)200 mJ
- Nominal Vgs3 V
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STF12NM60N Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 960pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Its maximum pulsed drain current is 40A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STF12NM60N Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 40A.
a threshold voltage of 3V
STF12NM60N Applications
There are a lot of STMicroelectronics
STF12NM60N applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 960pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Its maximum pulsed drain current is 40A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STF12NM60N Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 40A.
a threshold voltage of 3V
STF12NM60N Applications
There are a lot of STMicroelectronics
STF12NM60N applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STF12NM60N More Descriptions
N-channel 600V - 0.35Ohm - 10A - D2/I2PAK - TO-220/FP - TO-247
Power MOSFET Transistors N Ch 600V 0.35 Ohm 10A Pwr MOSFET
Power Field-Effect Transistor, 10A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 10A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 25W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 600V; Voltage Vgs Rds on Measurement: 10V
Power MOSFET Transistors N Ch 600V 0.35 Ohm 10A Pwr MOSFET
Power Field-Effect Transistor, 10A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 10A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 25W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 600V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to STF12NM60N.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsREACH SVHCRoHS StatusLead FreeFactory Lead TimeLifecycle StatusConfigurationDrain to Source Voltage (Vdss)Turn On Delay TimeHeightLengthWidthRadiation HardeningView Compare
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STF12NM60NThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeMDmesh™ IIe3Obsolete1 (Unlimited)3Through HoleEAR99410mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIEDSTF123Not Qualified125W TcSingleENHANCEMENT MODE25WISOLATEDN-ChannelSWITCHING410m Ω @ 5A, 10V4V @ 250μA960pF @ 50V10A Tc30.5nC @ 10V9ns10V±25V10 ns60 ns10A3VTO-220AB25V600V40A600V200 mJ3 VNo SVHCROHS3 CompliantLead Free----------
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Through HoleThrough HoleTO-220-3 Full Pack---Tube--Active1 (Unlimited)----------STF12------------------------------ROHS3 CompliantLead Free40 Weeks--------
-
Through HoleThrough HoleTO-220-3 Full Pack---55°C~150°C TJTubeMDmesh™ II Plus-Active1 (Unlimited)--EAR99--FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIEDSTF12---85W Tc----N-Channel-380m Ω @ 5A, 10V4V @ 250μA560pF @ 100V10A Tc15nC @ 10V-10V±25V--10A---------ROHS3 CompliantLead Free16 WeeksACTIVE (Last Updated: 8 months ago)Single500V-----
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Through HoleThrough HoleTO-220-5 Full Pack3SILICON150°C TJTubeMDmesh™ Ve3Active1 (Unlimited)3-EAR99430mOhmMatte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)---STF123-125W TcSingleENHANCEMENT MODE25WISOLATEDN-ChannelSWITCHING430m Ω @ 4.3A, 10V5V @ 250μA900pF @ 100V8.5A Tc22nC @ 10V9.5ns10V±25V24 ns15.6 ns8.5A4VTO-220AB25V650V----No SVHCROHS3 CompliantLead Free17 Weeks---22.6 ns16.4mm10.4mm4.6mmNo
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