STMicroelectronics STF11NM80

Name: STF11NM80
Brand: STMicroelectronics
SKU: 2478563-STF11NM80
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STF11NM80

Manufacturer:: STMicroelectronics

Ventron No:: 2478563-STF11NM80

Description:: MOSFET N-CH 800V 11A TO220FP

ECAD Model:

Datasheet:: STF11NM80

Specifications

STMicroelectronics STF11NM80 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF11NM80.

Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
MDmesh™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
400mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
800V
Technology
MOSFET (Metal Oxide)
Current Rating
11A
Base Part Number
STF11
Pin Count
3
Number of Elements
1
Power Dissipation-Max
35W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
35W
Case Connection
ISOLATED
Turn On Delay Time
22 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
400m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1630pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
43.6nC @ 10V
Rise Time
17ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
46 ns
Continuous Drain Current (ID)
11A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
800V
Pulsed Drain Current-Max (IDM)
44A
Avalanche Energy Rating (Eas)
400 mJ
Height
9.3mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STF11NM80 Description
STMicroelectronics' breakthrough MDmeshTM technology, which combines the multiple drain process with the company's PowerMESHTM horizontal layout, was used to manufacture STF11NM80 MOSFETs. These devices have a very low on-resistance, a very high dv/dt, and good avalanche properties. These Power MOSFETs have an overall dynamic performance that is superior to similar items on the market because to ST's proprietary strip process.

STF11NM80 Features
Gate charge and input capacitance are both low.
Input gate resistance is low.
The industry's best RDS(on)*Qg

STF11NM80 Applications
Switching applications

STF11NM80 More Descriptions

MOSFET, N CH, 800V, 11A, TO220FP; Transistor Polarity:N Channel; Continuous Drai
N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in TO-220FP
Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 800V, 11A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:35W; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:11A; Package / Case:TO-220FP; Power Dissipation Pd:35W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to STF11NM80.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Pbfree Code

Terminal Position

Configuration

Drain-source On Resistance-Max

Lifecycle Status

View Compare
STF11NM80

STMicroelectronics

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

EAR99

400mOhm

Matte Tin (Sn) - annealed

ULTRA-LOW RESISTANCE

FET General Purpose Power

800V

MOSFET (Metal Oxide)

11A

STF11

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

ISOLATED

22 ns

N-Channel

SWITCHING

400m Ω @ 5.5A, 10V

5V @ 250μA

1630pF @ 25V

11A Tc

43.6nC @ 10V

17ns

10V

±30V

15 ns

46 ns

11A

4V

TO-220AB

30V

800V

44A

400 mJ

9.3mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
STF10NM60ND

STMicroelectronics

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

FDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

550MOhm

Matte Tin (Sn) - annealed

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STF10N

3

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

9.2 ns

N-Channel

SWITCHING

550m Ω @ 4A, 10V

4V @ 250μA

540pF @ 50V

8A Tc

19nC @ 10V

10ns

10V

±25V

9.8 ns

32 ns

8A

4V

TO-220AB

25V

650V

-

-

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

600V

8A

-

-

-

-

-

STF11NM80 vs STF10NM60ND
STF11N65K3

STMicroelectronics

-

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH3™

e3

Obsolete

1 (Unlimited)

3

-

-

Matte Tin (Sn) - annealed

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STF11

3

1

35W Tc

-

ENHANCEMENT MODE

35W

ISOLATED

14.5 ns

N-Channel

SWITCHING

850m Ω @ 3.6A, 10V

4.5V @ 100μA

1180pF @ 50V

11A Tc

42nC @ 10V

14ns

10V

±30V

35 ns

44 ns

11A

-

TO-220AB

30V

650V

40A

212 mJ

-

-

-

-

No

ROHS3 Compliant

-

-

-

yes

SINGLE

SINGLE WITH BUILT-IN DIODE

0.85Ohm

-

STF11NM80 vs STF11N65K3
STF11NM50N

STMicroelectronics

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

470MOhm

Matte Tin (Sn) - annealed

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STF11

3

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

8 ns

N-Channel

SWITCHING

470m Ω @ 4.5A, 10V

4V @ 250μA

547pF @ 50V

8.5A Tc

19nC @ 10V

10ns

10V

±25V

10 ns

33 ns

8.5A

3V

TO-220AB

25V

500V

-

-

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

9A

-

-

-

-

ACTIVE (Last Updated: 8 months ago)

STF11NM80 vs STF11NM50N