STMicroelectronics STF11NM60N

Name: STF11NM60N
Brand: STMicroelectronics
SKU: 3586524-STF11NM60N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STF11NM60N

Manufacturer:: STMicroelectronics

Ventron No:: 3586524-STF11NM60N

Description:: MOSFET N-CH 600V 10A TO-220FP

ECAD Model:

Datasheet:: STx11NM60N

Specifications

STMicroelectronics STF11NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF11NM60N.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
10A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STF11
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
25W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
25W
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
450m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 50V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Rise Time
18.5ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
10A
Threshold Voltage
3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain-source On Resistance-Max
0.45Ohm
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
40A
Avalanche Energy Rating (Eas)
200 mJ
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STF11NM60N Description
STF11NM60N is a 600v N-channel MDmesh? II Power MOSFET. The STF11NM60N is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET STF11NM60N associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charges. It is therefore suitable for the most demanding high-efficiency converters.

STF11NM60N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Drain-source voltage (VGS = 0): 600v
Gate-source voltage: ±20v

STF11NM60N Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

STF11NM60N More Descriptions

Transistor MOSFET N-CH 600V 10A 3-Pin (3 Tab) TO-220FP Tube
N-channel 600V - 0.37Y - 10A - TO-220 - TO-220FP- IPAK - DPAK
Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:10A; Resistance, Rds On:0.45ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220FP; ;RoHS Compliant: Yes
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 25W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas: 200mJ; Capacitance Ciss Typ: 850pF; Current Iar: 3.5A; Current Id Max: 10A; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Junction to Case Thermal Resistance A: 5°C/W; On State resistance @ Vgs = 10V: 450mohm; Pulse Current Idm: 40A; Termination Type: Through Hole; Voltage Vds: 650V; Voltage Vds Typ: 600V; Voltage Vgs Max: 25V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V; Voltage Vgs th Min: 2V

Product Comparison

The three parts on the right have similar specifications to STF11NM60N.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

REACH SVHC

RoHS Status

Lead Free

Terminal Position

Configuration

Turn On Delay Time

Radiation Hardening

Factory Lead Time

Resistance

Height

Length

Width

View Compare
STF11NM60N

STMicroelectronics

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

FET General Purpose Power

600V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

10A

NOT SPECIFIED

STF11

3

Not Qualified

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

N-Channel

SWITCHING

450m Ω @ 5A, 10V

4V @ 250μA

850pF @ 50V

10A Tc

31nC @ 10V

18.5ns

10V

±25V

12 ns

50 ns

10A

3V

TO-220AB

25V

0.45Ohm

600V

40A

200 mJ

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
STF11N65K3

STMicroelectronics

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH3™

e3

yes

Obsolete

1 (Unlimited)

3

-

Matte Tin (Sn) - annealed

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STF11

3

-

1

35W Tc

-

ENHANCEMENT MODE

35W

ISOLATED

N-Channel

SWITCHING

850m Ω @ 3.6A, 10V

4.5V @ 100μA

1180pF @ 50V

11A Tc

42nC @ 10V

14ns

10V

±30V

35 ns

44 ns

11A

-

TO-220AB

30V

0.85Ohm

650V

40A

212 mJ

-

ROHS3 Compliant

-

SINGLE

SINGLE WITH BUILT-IN DIODE

14.5 ns

No

-

-

-

-

-

STF11NM60N vs STF11N65K3
STF12NM65

STMicroelectronics

Through Hole

Through Hole

TO-220-3 Full Pack

-

-

-

Tube

-

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

STF12

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

40 Weeks

-

-

-

-

STF11NM60N vs STF12NM65
STF12N65M5

STMicroelectronics

Through Hole

Through Hole

TO-220-5 Full Pack

3

SILICON

150°C TJ

Tube

MDmesh™ V

e3

-

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STF12

3

-

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

N-Channel

SWITCHING

430m Ω @ 4.3A, 10V

5V @ 250μA

900pF @ 100V

8.5A Tc

22nC @ 10V

9.5ns

10V

±25V

24 ns

15.6 ns

8.5A

4V

TO-220AB

25V

-

650V

-

-

No SVHC

ROHS3 Compliant

Lead Free

-

-

22.6 ns

No

17 Weeks

430mOhm

16.4mm

10.4mm

4.6mm

STF11NM60N vs STF12N65M5