STF10N80K5

STMicroelectronics STF10N80K5

Part Number:
STF10N80K5
Manufacturer:
STMicroelectronics
Ventron No:
2479047-STF10N80K5
Description:
MOSFET N-CH 800V 9A TO-220FP
ECAD Model:
Datasheet:
STF10N80K5

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Specifications
STMicroelectronics STF10N80K5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF10N80K5.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    17 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Weight
    329.988449mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Resistance
    470mOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STF10N
  • Number of Channels
    1
  • Power Dissipation-Max
    30W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    14.5 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    600m Ω @ 4.5A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    635pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • Rise Time
    11ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    14 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    9A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain to Source Breakdown Voltage
    800V
  • RoHS Status
    ROHS3 Compliant
Description
STF10N80K5 Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure.  The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

STF10N80K5 Features Industry's lowest RDS(on) x area  industry's best figure of merit (FOM)  Ultra-low gate charge  100% avalanche tested  Zener-protected

STF10N80K5 Applications Switching applications

STF10N80K5 More Descriptions
N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package
N-Channel 800 V 600 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 800V 9A 3-Pin(3 Tab) TO-220FP Tube
Mosfet, N-Ch, 800V, 9A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STF10N80K5
Product Comparison
The three parts on the right have similar specifications to STF10N80K5.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Resistance
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    RoHS Status
    Lead Free
    Number of Pins
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Pin Count
    Number of Elements
    Operating Mode
    Power Dissipation
    Case Connection
    Transistor Application
    Threshold Voltage
    JEDEC-95 Code
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    View Compare
  • STF10N80K5
    STF10N80K5
    ACTIVE (Last Updated: 8 months ago)
    17 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    329.988449mg
    -55°C~150°C TJ
    Tube
    MDmesh™
    Active
    1 (Unlimited)
    EAR99
    470mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    STF10N
    1
    30W Tc
    Single
    14.5 ns
    N-Channel
    600m Ω @ 4.5A, 10V
    5V @ 100μA
    635pF @ 100V
    9A Tc
    22nC @ 10V
    11ns
    10V
    ±30V
    14 ns
    35 ns
    9A
    30V
    9A
    800V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STF12NM65
    -
    40 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -
    -
    Tube
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    STF12
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STF12N65M5
    -
    17 Weeks
    Through Hole
    Through Hole
    TO-220-5 Full Pack
    -
    150°C TJ
    Tube
    MDmesh™ V
    Active
    1 (Unlimited)
    EAR99
    430mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    STF12
    -
    25W Tc
    Single
    22.6 ns
    N-Channel
    430m Ω @ 4.3A, 10V
    5V @ 250μA
    900pF @ 100V
    8.5A Tc
    22nC @ 10V
    9.5ns
    10V
    ±25V
    24 ns
    15.6 ns
    8.5A
    25V
    -
    650V
    ROHS3 Compliant
    Lead Free
    3
    SILICON
    e3
    3
    Matte Tin (Sn) - annealed
    3
    1
    ENHANCEMENT MODE
    25W
    ISOLATED
    SWITCHING
    4V
    TO-220AB
    16.4mm
    10.4mm
    4.6mm
    No SVHC
    No
  • STF11NM50N
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -
    150°C TJ
    Tube
    MDmesh™ II
    Active
    1 (Unlimited)
    EAR99
    470MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    STF11
    -
    25W Tc
    Single
    8 ns
    N-Channel
    470m Ω @ 4.5A, 10V
    4V @ 250μA
    547pF @ 50V
    8.5A Tc
    19nC @ 10V
    10ns
    10V
    ±25V
    10 ns
    33 ns
    8.5A
    25V
    9A
    500V
    ROHS3 Compliant
    Lead Free
    3
    SILICON
    e3
    3
    Matte Tin (Sn) - annealed
    3
    1
    ENHANCEMENT MODE
    25W
    ISOLATED
    SWITCHING
    3V
    TO-220AB
    16.4mm
    10.4mm
    4.6mm
    No SVHC
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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