STMicroelectronics STF10N80K5
- Part Number:
- STF10N80K5
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2479047-STF10N80K5
- Description:
- MOSFET N-CH 800V 9A TO-220FP
- Datasheet:
- STF10N80K5
STMicroelectronics STF10N80K5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF10N80K5.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Weight329.988449mg
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMDmesh™
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Resistance470mOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTF10N
- Number of Channels1
- Power Dissipation-Max30W Tc
- Element ConfigurationSingle
- Turn On Delay Time14.5 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs600m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds635pF @ 100V
- Current - Continuous Drain (Id) @ 25°C9A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Rise Time11ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)14 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)9A
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)9A
- Drain to Source Breakdown Voltage800V
- RoHS StatusROHS3 Compliant
STF10N80K5 Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh? K5
technology based on an innovative proprietary
vertical structure.
The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
STF10N80K5 Features Industry's lowest RDS(on) x area industry's best figure of merit (FOM) Ultra-low gate charge 100% avalanche tested Zener-protected
STF10N80K5 Applications Switching applications
STF10N80K5 Features Industry's lowest RDS(on) x area industry's best figure of merit (FOM) Ultra-low gate charge 100% avalanche tested Zener-protected
STF10N80K5 Applications Switching applications
STF10N80K5 More Descriptions
N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package
N-Channel 800 V 600 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 800V 9A 3-Pin(3 Tab) TO-220FP Tube
Mosfet, N-Ch, 800V, 9A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STF10N80K5
N-Channel 800 V 600 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 800V 9A 3-Pin(3 Tab) TO-220FP Tube
Mosfet, N-Ch, 800V, 9A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STF10N80K5
The three parts on the right have similar specifications to STF10N80K5.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseWeightOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeResistanceSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageRoHS StatusLead FreeNumber of PinsTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishPin CountNumber of ElementsOperating ModePower DissipationCase ConnectionTransistor ApplicationThreshold VoltageJEDEC-95 CodeHeightLengthWidthREACH SVHCRadiation HardeningView Compare
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STF10N80K5ACTIVE (Last Updated: 8 months ago)17 WeeksThrough HoleThrough HoleTO-220-3 Full Pack329.988449mg-55°C~150°C TJTubeMDmesh™Active1 (Unlimited)EAR99470mOhmFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTF10N130W TcSingle14.5 nsN-Channel600m Ω @ 4.5A, 10V5V @ 100μA635pF @ 100V9A Tc22nC @ 10V11ns10V±30V14 ns35 ns9A30V9A800VROHS3 Compliant--------------------
-
-40 WeeksThrough HoleThrough HoleTO-220-3 Full Pack--Tube-Active1 (Unlimited)------STF12-------------------ROHS3 CompliantLead Free------------------
-
-17 WeeksThrough HoleThrough HoleTO-220-5 Full Pack-150°C TJTubeMDmesh™ VActive1 (Unlimited)EAR99430mOhmFET General Purpose PowerMOSFET (Metal Oxide)--STF12-25W TcSingle22.6 nsN-Channel430m Ω @ 4.3A, 10V5V @ 250μA900pF @ 100V8.5A Tc22nC @ 10V9.5ns10V±25V24 ns15.6 ns8.5A25V-650VROHS3 CompliantLead Free3SILICONe33Matte Tin (Sn) - annealed31ENHANCEMENT MODE25WISOLATEDSWITCHING4VTO-220AB16.4mm10.4mm4.6mmNo SVHCNo
-
ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-3 Full Pack-150°C TJTubeMDmesh™ IIActive1 (Unlimited)EAR99470MOhmFET General Purpose PowerMOSFET (Metal Oxide)--STF11-25W TcSingle8 nsN-Channel470m Ω @ 4.5A, 10V4V @ 250μA547pF @ 50V8.5A Tc19nC @ 10V10ns10V±25V10 ns33 ns8.5A25V9A500VROHS3 CompliantLead Free3SILICONe33Matte Tin (Sn) - annealed31ENHANCEMENT MODE25WISOLATEDSWITCHING3VTO-220AB16.4mm10.4mm4.6mmNo SVHCNo
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