STMicroelectronics STD8N80K5

Name: STD8N80K5
Brand: STMicroelectronics
SKU: 2478392-STD8N80K5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD8N80K5

Manufacturer:: STMicroelectronics

Ventron No:: 2478392-STD8N80K5

Description:: MOSFET N CH 800V 6A DPAK

ECAD Model:

Datasheet:: STD8N80K5

Specifications

STMicroelectronics STD8N80K5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD8N80K5.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
17 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH5™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
950mOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Base Part Number
STD8N
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
110W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
110W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
950m Ω @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
450pF @ 100V
Current - Continuous Drain (Id) @ 25°C
6A Tc
Gate Charge (Qg) (Max) @ Vgs
16.5nC @ 10V
Rise Time
14ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
6A
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
6A
Drain to Source Breakdown Voltage
800V
Pulsed Drain Current-Max (IDM)
24A
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD8N80K5 Description
MDmeshTM K5 technology is used to create this very high voltage N-channel Power MOSFET, which is based on a unique proprietary vertical structure. For applications needing great power density and efficiency, the outcome is a significant reduction in on-resistance and an ultra-low gate charge.

STD8N80K5 Features
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected

STD8N80K5 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

STD8N80K5 More Descriptions

N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in DPAK package
MOSFET, N-CH, 800V, 6A, 110W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Power Field-Effect Transistor, 6A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Product Comparison

The three parts on the right have similar specifications to STD8N80K5.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Terminal Form

Base Part Number

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Configuration

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Pbfree Code

Terminal Finish

Pin Count

Threshold Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

REACH SVHC

Termination

Additional Feature

Reach Compliance Code

Qualification Status

Dual Supply Voltage

View Compare
STD8N80K5

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

17 Weeks

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH5™

e3

Active

1 (Unlimited)

2

EAR99

950mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

STD8N

R-PSSO-G2

1

110W Tc

Single

ENHANCEMENT MODE

110W

DRAIN

12 ns

N-Channel

SWITCHING

950m Ω @ 3A, 10V

5V @ 100μA

450pF @ 100V

6A Tc

16.5nC @ 10V

14ns

10V

±30V

20 ns

32 ns

6A

30V

6A

800V

24A

2.4mm

6.6mm

6.2mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STD85N10F7AG

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, STripFET™

-

Active

1 (Unlimited)

2

EAR99

-

-

MOSFET (Metal Oxide)

GULL WING

STD85

R-PSSO-G2

1

85W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

10m Ω @ 40A, 10V

4.5V @ 250μA

3100pF @ 50V

70A Tc

45nC @ 10V

-

10V

±20V

-

-

70A

-

-

-

280A

-

-

-

-

ROHS3 Compliant

Lead Free

SINGLE

NOT SPECIFIED

NOT SPECIFIED

SINGLE WITH BUILT-IN DIODE

100V

0.01Ohm

100V

-

-

-

-

-

-

-

-

-

-

-

-

STD8N80K5 vs STD85N10F7AG
STD8NM60ND

STMicroelectronics

-

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

FDmesh™ II

e3

Obsolete

1 (Unlimited)

2

EAR99

700mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

STD8N

R-PSSO-G2

1

70W Tc

Single

ENHANCEMENT MODE

70W

DRAIN

9 ns

N-Channel

SWITCHING

700m Ω @ 3.5A, 10V

5V @ 250μA

560pF @ 50V

7A Tc

22nC @ 10V

22ns

10V

±30V

22 ns

37 ns

7A

30V

7A

600V

28A

-

-

-

No

ROHS3 Compliant

Lead Free

-

260

-

-

-

-

-

yes

Matte Tin (Sn) - annealed

3

4V

200 mJ

4 V

No SVHC

-

-

-

-

-

STD8N80K5 vs STD8NM60ND
STD8NM60N-1

STMicroelectronics

-

-

-

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

STD8N

-

1

70W Tc

Single

ENHANCEMENT MODE

70W

-

-

N-Channel

SWITCHING

650m Ω @ 3.5A, 10V

4V @ 250μA

560pF @ 50V

7A Tc

19nC @ 10V

12ns

10V

±25V

10 ns

40 ns

3.5A

25V

7A

600V

28A

-

-

-

-

ROHS3 Compliant

-

-

260

30

-

-

0.65Ohm

-

yes

Matte Tin (Sn)

3

-

200 mJ

3 V

No SVHC

Through Hole

AVALANCHE RATED

not_compliant

Not Qualified

600V

STD8N80K5 vs STD8NM60N-1