STMicroelectronics STD7NM80

Name: STD7NM80
Brand: STMicroelectronics
SKU: 2479899-STD7NM80
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD7NM80

Manufacturer:: STMicroelectronics

Ventron No:: 2479899-STD7NM80

Description:: MOSFET N-CH 800V 6.5A DPAK

ECAD Model:

Datasheet:: STD7NM80

Specifications

STMicroelectronics STD7NM80 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD7NM80.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
1.05Ohm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STD7
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
90W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
90W
Case Connection
ISOLATED
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.05 Ω @ 3.25A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
620pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.5A Tc
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
6.5A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
800V
Pulsed Drain Current-Max (IDM)
26A
Dual Supply Voltage
800V
Avalanche Energy Rating (Eas)
240 mJ
Nominal Vgs
4 V
Height
2.4mm
Length
6.6mm
Width
6.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD7NM80 Description

STD7NM80 belongs to the family of N-channel MDmesh? II Power MOSFETs that are manufactured by STMicroelectronics based on the generation 2 MDmesh? II technology. STD7NM80 features a verticle structure to provide the lowest on-resistance and gate charge among electronic components. Due to its specific characteristics, it is well suited for the most demanding high-frequency converters.

STD7NM80 Features

Low on-resistance
Low gate charge
Generation 2 MDmesh? II technology
Available in the DPAK, IPAK, TO-220FP and TO-220 packages

STD7NM80 Applications

Switching applications
High-efficiency converters

STD7NM80 More Descriptions

N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in DPAK package
N-Channel 800 V 1.05 O Surface Mount MDmesh Power Mosfet - TO-252
Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 800V, 6.5A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.25A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.95ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 90W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STD7NM80.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Additional Feature

Reach Compliance Code

Qualification Status

Drain Current-Max (Abs) (ID)

Voltage - Rated DC

Current Rating

JEDEC-95 Code

View Compare
STD7NM80

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

MDmesh™

e3

Active

1 (Unlimited)

2

SMD/SMT

EAR99

1.05Ohm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

STD7

3

R-PSSO-G2

1

90W Tc

Single

ENHANCEMENT MODE

90W

ISOLATED

20 ns

N-Channel

SWITCHING

1.05 Ω @ 3.25A, 10V

5V @ 250μA

620pF @ 25V

6.5A Tc

18nC @ 10V

8ns

10V

±30V

10 ns

35 ns

6.5A

4V

30V

800V

26A

800V

240 mJ

4 V

2.4mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
STD70N03L

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ III

e3

Obsolete

1 (Unlimited)

2

-

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

STD70N

3

R-PSSO-G2

1

70W Tc

Single

ENHANCEMENT MODE

70W

DRAIN

-

N-Channel

SWITCHING

7.3m Ω @ 35A, 10V

1V @ 250μA

2200pF @ 25V

70A Tc

21nC @ 5V

95ns

5V 10V

±20V

15 ns

19 ns

70A

-

20V

30V

280A

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

LOW THRESHOLD

not_compliant

Not Qualified

-

-

-

-

STD7NM80 vs STD70N03L
STD7NM50N

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

MDmesh™ II

e3

Obsolete

1 (Unlimited)

2

-

EAR99

780mOhm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

STD7

3

R-PSSO-G2

1

45W Tc

Single

ENHANCEMENT MODE

45W

-

-

N-Channel

SWITCHING

780m Ω @ 2.5A, 10V

4V @ 250μA

400pF @ 50V

5A Tc

12nC @ 10V

5ns

10V

±25V

9 ns

40 ns

2.5A

-

25V

500V

20A

-

100 mJ

3 V

-

-

-

No SVHC

-

ROHS3 Compliant

Lead Free

-

not_compliant

Not Qualified

5A

-

-

-

STD7NM80 vs STD7NM50N
STD7NS20T4

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

MESH OVERLAY™

e3

Active

1 (Unlimited)

2

-

EAR99

400mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

STD7

3

R-PSSO-G2

1

45W Tc

Single

ENHANCEMENT MODE

45W

DRAIN

10 ns

N-Channel

SWITCHING

400m Ω @ 3.5A, 10V

4V @ 250μA

540pF @ 25V

7A Tc

45nC @ 10V

15ns

10V

±20V

12 ns

-

7A

3V

20V

200V

28A

-

60 mJ

-

2.4mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

7A

200V

7A

TO-252AA

STD7NM80 vs STD7NS20T4