STMicroelectronics STD7NM60N

Name: STD7NM60N
Brand: STMicroelectronics
SKU: 2478713-STD7NM60N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD7NM60N

Manufacturer:: STMicroelectronics

Ventron No:: 2478713-STD7NM60N

Description:: MOSFET N-CH 600V 5A DPAK

ECAD Model:

Datasheet:: STD7NM60N

Specifications

STMicroelectronics STD7NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD7NM60N.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™ II
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
900mOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Base Part Number
STD7
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Turn On Delay Time
7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
900m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
363pF @ 50V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
5A
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
20A
Avalanche Energy Rating (Eas)
119 mJ
Height
2.4mm
Length
6.6mm
Width
6.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD7NM60N Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charges. They are therefore suitable for the most demanding high-efficiency converters.
STD7NM60N Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
STD7NM60N Applications Switching applications

STD7NM60N More Descriptions

N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in DPAK package
Single N-Channel 600 V 0.9 Ohm 14 nC 45 W Silicon SMT Mosfet - TO-252-3
MOSFET N-CH 600V 5A DPAK / Trans MOSFET N-CH 600V 5A 3-Pin(2 Tab) DPAK T/R
MOSFET, N CH, 600V, 5A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.84ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dis
Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Product Comparison

The three parts on the right have similar specifications to STD7NM60N.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Terminal Form

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Terminal Finish

Peak Reflow Temperature (Cel)

Case Connection

JEDEC-95 Code

Drain-source On Resistance-Max

Pbfree Code

View Compare
STD7NM60N

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

16 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

MDmesh™ II

Active

1 (Unlimited)

2

EAR99

900mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

STD7

3

R-PSSO-G2

1

45W Tc

Single

ENHANCEMENT MODE

45W

7 ns

N-Channel

SWITCHING

900m Ω @ 2.5A, 10V

4V @ 250μA

363pF @ 50V

5A Tc

14nC @ 10V

10ns

10V

±25V

12 ns

26 ns

5A

3V

25V

5A

600V

20A

119 mJ

2.4mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
STD70N6F3

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Cut Tape (CT)

STripFET™ III

Active

1 (Unlimited)

2

EAR99

10.5MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

STD70N

3

R-PSSO-G2

1

110W Tc

Single

ENHANCEMENT MODE

110W

-

N-Channel

SWITCHING

10.5m Ω @ 35A, 10V

4V @ 250μA

2200pF @ 25V

70A Tc

35nC @ 10V

-

10V

±20V

-

-

70A

-

20V

-

60V

280A

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

e3

Matte Tin (Sn) - annealed

260

DRAIN

-

-

-

STD7NM60N vs STD70N6F3
STD7NK30Z

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

Obsolete

1 (Unlimited)

2

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

STD7

3

R-PSSO-G2

1

50W Tc

Single

ENHANCEMENT MODE

50W

11 ns

N-Channel

SWITCHING

900m Ω @ 2.5A, 10V

4.5V @ 50μA

380pF @ 25V

5A Tc

13nC @ 10V

25ns

10V

±30V

10 ns

20 ns

5A

-

30V

5A

300V

20A

-

-

-

-

-

No

ROHS3 Compliant

-

-

-

-

-

TO-252AA

0.9Ohm

-

STD7NM60N vs STD7NK30Z
STD70N2LH5

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ V

Obsolete

1 (Unlimited)

2

EAR99

7.1MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

STD70N

3

R-PSSO-G2

1

60W Tc

Single

ENHANCEMENT MODE

60W

-

N-Channel

SWITCHING

7.1m Ω @ 24A, 10V

1V @ 250μA

1300pF @ 25V

48A Tc

8nC @ 5V

-

5V 10V

±22V

-

-

48A

-

22V

-

25V

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

DRAIN

-

-

yes

STD7NM60N vs STD70N2LH5