STMicroelectronics STD5NM60T4

Name: STD5NM60T4
Brand: STMicroelectronics
SKU: 2480584-STD5NM60T4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD5NM60T4

Manufacturer:: STMicroelectronics

Ventron No:: 2480584-STD5NM60T4

Description:: MOSFET N-CH 600V 5A DPAK

ECAD Model:

Datasheet:: STD5NM60T4

Specifications

STMicroelectronics STD5NM60T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD5NM60T4.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
1Ohm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
5A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STD5N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
96W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
96W
Turn On Delay Time
14 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
23 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
4V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
5A
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
20A
Avalanche Energy Rating (Eas)
200 mJ
Height
2.4mm
Length
6.6mm
Width
6.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD5NM60T4 Description
The STD5NM60T4 is an N-channel MDmeshTM Power MOSFET with a low on-resistance, a high dv/dt, and excellent avalanche characteristics. The MDmeshTM is a new innovative power MOSFET technology that combines the company's PowerMESHTM horizontal layout with the multiple drain method. The use of the company's proprietary strip process results in total dynamic performance that is far superior to that of similar competitors' products.

STD5NM60T4 Features
100% Avalanche tested
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
Low gate input resistance

STD5NM60T4 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

STD5NM60T4 More Descriptions

N-Channel 600V - 0.9Ohm - 8A MDmesh(TM) POWER MOSFET
N-Channel 650 V 1 Ohm Surface Mount MDmesh Power MosFet - TO-252-3
Power Field-Effect Transistor, 5A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:5A; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:96W; Power Dissipation Pd:96W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to STD5NM60T4.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Configuration

Drain to Source Voltage (Vdss)

Pbfree Code

Case Connection

View Compare
STD5NM60T4

STMicroelectronics

16 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

MDmesh™

e3

Active

1 (Unlimited)

2

EAR99

1Ohm

Matte Tin (Sn) - annealed

FET General Purpose Power

600V

MOSFET (Metal Oxide)

GULL WING

260

5A

30

STD5N

3

R-PSSO-G2

1

96W Tc

Single

ENHANCEMENT MODE

96W

14 ns

N-Channel

SWITCHING

1 Ω @ 2.5A, 10V

5V @ 250μA

400pF @ 25V

5A Tc

18nC @ 10V

10ns

10V

±30V

10 ns

23 ns

5A

4V

TO-252AA

30V

5A

600V

20A

200 mJ

2.4mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-
STD52P3LLH6

STMicroelectronics

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

175°C TJ

Cut Tape (CT)

STripFET™ H6

-

Active

1 (Unlimited)

-

EAR99

-

-

Other Transistors

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

-

NOT SPECIFIED

STD52P

-

-

-

70W Tc

-

-

-

-

P-Channel

-

12m Ω @ 26A, 10V

2.5V @ 250μA

3350pF @ 25V

52A Tc

33nC @ 4.5V

-

4.5V 10V

±20V

-

-

52A

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

Single

30V

-

-

STD5NM60T4 vs STD52P3LLH6
STD55N4F5

STMicroelectronics

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ V

-

Obsolete

1 (Unlimited)

2

EAR99

8.5MOhm

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

-

-

-

STD55N

3

R-PSSO-G2

1

60W Tc

Single

ENHANCEMENT MODE

60W

15 ns

N-Channel

SWITCHING

8.5m Ω @ 27.5A, 10V

4V @ 250μA

1600pF @ 25V

55A Tc

25nC @ 10V

15ns

10V

±20V

6 ns

25 ns

55A

-

-

20V

-

40V

220A

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

yes

DRAIN

STD5NM60T4 vs STD55N4F5
STD5NK50Z-1

STMicroelectronics

-

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn) - annealed

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

260

-

30

STD5N

3

-

1

70W Tc

Single

ENHANCEMENT MODE

70W

15 ns

N-Channel

SWITCHING

1.5 Ω @ 2.2A, 10V

4.5V @ 50μA

535pF @ 25V

4.4A Tc

28nC @ 10V

10ns

10V

±30V

15 ns

32 ns

2.2A

3.75V

-

30V

4.4A

500V

-

-

6.2mm

6.6mm

2.4mm

No SVHC

No

ROHS3 Compliant

-

-

-

yes

-

STD5NM60T4 vs STD5NK50Z-1