STD5NM60-1

STMicroelectronics STD5NM60-1

Part Number:
STD5NM60-1
Manufacturer:
STMicroelectronics
Ventron No:
2484798-STD5NM60-1
Description:
MOSFET N-CH 600V 5A IPAK
ECAD Model:
Datasheet:
STD5NM60-1

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Specifications
STMicroelectronics STD5NM60-1 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD5NM60-1.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    26 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    650V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    8A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STD5N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    96W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    96W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1 Ω @ 2.5A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    400pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 10V
  • Rise Time
    10ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    23 ns
  • Continuous Drain Current (ID)
    5A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain-source On Resistance-Max
    1Ohm
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    20A
  • Avalanche Energy Rating (Eas)
    200 mJ
  • Height
    6.2mm
  • Length
    6.6mm
  • Width
    2.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STD5NM60-1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 200 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Peak drain current is 20A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STD5NM60-1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 20A.
a threshold voltage of 4V


STD5NM60-1 Applications
There are a lot of STMicroelectronics
STD5NM60-1 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
STD5NM60-1 More Descriptions
N-Channel 600V - 0.9Ohm - 8A MDmesh(TM) POWER MOSFET
Power Field-Effect Transistor, 5A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Mosfet, N Channel, 600V, 5A, To-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STD5NM60-1
Product Comparison
The three parts on the right have similar specifications to STD5NM60-1.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Configuration
    Drain to Source Voltage (Vdss)
    Resistance
    Terminal Form
    JESD-30 Code
    View Compare
  • STD5NM60-1
    STD5NM60-1
    ACTIVE (Last Updated: 7 months ago)
    26 Weeks
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    650V
    MOSFET (Metal Oxide)
    260
    8A
    30
    STD5N
    3
    1
    96W Tc
    Single
    ENHANCEMENT MODE
    96W
    14 ns
    N-Channel
    SWITCHING
    1 Ω @ 2.5A, 10V
    5V @ 250μA
    400pF @ 25V
    5A Tc
    18nC @ 10V
    10ns
    10V
    ±30V
    10 ns
    23 ns
    5A
    4V
    30V
    5A
    1Ohm
    600V
    20A
    200 mJ
    6.2mm
    6.6mm
    2.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • STD52P3LLH6
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    175°C TJ
    Cut Tape (CT)
    STripFET™ H6
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    Other Transistors
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    -
    NOT SPECIFIED
    STD52P
    -
    -
    70W Tc
    -
    -
    -
    -
    P-Channel
    -
    12m Ω @ 26A, 10V
    2.5V @ 250μA
    3350pF @ 25V
    52A Tc
    33nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    52A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Single
    30V
    -
    -
    -
  • STD5N95K3
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    SuperMESH3™
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    260
    -
    -
    STD5N
    3
    1
    90W Tc
    Single
    ENHANCEMENT MODE
    90W
    17 ns
    N-Channel
    SWITCHING
    3.5 Ω @ 2A, 10V
    5V @ 100μA
    460pF @ 25V
    4A Tc
    19nC @ 10V
    7ns
    10V
    ±30V
    18 ns
    32 ns
    4A
    4V
    30V
    4A
    -
    950V
    -
    -
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    3.5Ohm
    GULL WING
    R-PSSO-G2
  • STD50NH02LT4
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ III
    -
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    -
    24V
    MOSFET (Metal Oxide)
    -
    50A
    -
    STD50N
    3
    -
    60W Tc
    Single
    -
    60W
    10 ns
    N-Channel
    -
    10.5m Ω @ 25A, 10V
    1.8V @ 250μA
    1400pF @ 25V
    50A Tc
    24nC @ 10V
    130ns
    5V 10V
    ±20V
    16 ns
    27 ns
    50A
    -
    20V
    -
    -
    24V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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