STMicroelectronics STD5NM60-1
- Part Number:
- STD5NM60-1
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2484798-STD5NM60-1
- Description:
- MOSFET N-CH 600V 5A IPAK
- Datasheet:
- STD5NM60-1
STMicroelectronics STD5NM60-1 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD5NM60-1.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time26 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMDmesh™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC650V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Current Rating8A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTD5N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max96W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation96W
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1 Ω @ 2.5A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5A Tc
- Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
- Rise Time10ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)5A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)5A
- Drain-source On Resistance-Max1Ohm
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)20A
- Avalanche Energy Rating (Eas)200 mJ
- Height6.2mm
- Length6.6mm
- Width2.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STD5NM60-1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 200 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Peak drain current is 20A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STD5NM60-1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 20A.
a threshold voltage of 4V
STD5NM60-1 Applications
There are a lot of STMicroelectronics
STD5NM60-1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 200 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Peak drain current is 20A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STD5NM60-1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 20A.
a threshold voltage of 4V
STD5NM60-1 Applications
There are a lot of STMicroelectronics
STD5NM60-1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
STD5NM60-1 More Descriptions
N-Channel 600V - 0.9Ohm - 8A MDmesh(TM) POWER MOSFET
Power Field-Effect Transistor, 5A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Mosfet, N Channel, 600V, 5A, To-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STD5NM60-1
Power Field-Effect Transistor, 5A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Mosfet, N Channel, 600V, 5A, To-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STD5NM60-1
The three parts on the right have similar specifications to STD5NM60-1.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeConfigurationDrain to Source Voltage (Vdss)ResistanceTerminal FormJESD-30 CodeView Compare
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STD5NM60-1ACTIVE (Last Updated: 7 months ago)26 WeeksThrough HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3SILICON-55°C~150°C TJTubeMDmesh™e3Active1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose Power650VMOSFET (Metal Oxide)2608A30STD5N3196W TcSingleENHANCEMENT MODE96W14 nsN-ChannelSWITCHING1 Ω @ 2.5A, 10V5V @ 250μA400pF @ 25V5A Tc18nC @ 10V10ns10V±30V10 ns23 ns5A4V30V5A1Ohm600V20A200 mJ6.2mm6.6mm2.4mmNo SVHCNoROHS3 CompliantLead Free------
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--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--175°C TJCut Tape (CT)STripFET™ H6-Active1 (Unlimited)-EAR99-Other Transistors-MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIEDSTD52P--70W Tc----P-Channel-12m Ω @ 26A, 10V2.5V @ 250μA3350pF @ 25V52A Tc33nC @ 4.5V-4.5V 10V±20V--52A------------ROHS3 Compliant-Single30V---
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ACTIVE (Last Updated: 8 months ago)12 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)SuperMESH3™e3Active1 (Unlimited)2EAR99Matte Tin (Sn) - annealedFET General Purpose Power-MOSFET (Metal Oxide)260--STD5N3190W TcSingleENHANCEMENT MODE90W17 nsN-ChannelSWITCHING3.5 Ω @ 2A, 10V5V @ 100μA460pF @ 25V4A Tc19nC @ 10V7ns10V±30V18 ns32 ns4A4V30V4A-950V--2.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead Free--3.5OhmGULL WINGR-PSSO-G2
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--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633--55°C~175°C TJTape & Reel (TR)STripFET™ III-Obsolete1 (Unlimited)-EAR99--24VMOSFET (Metal Oxide)-50A-STD50N3-60W TcSingle-60W10 nsN-Channel-10.5m Ω @ 25A, 10V1.8V @ 250μA1400pF @ 25V50A Tc24nC @ 10V130ns5V 10V±20V16 ns27 ns50A-20V--24V------NoROHS3 CompliantLead Free-----
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